IXTP110N12T2

Advance Technical Information IXTA110N12T2 IXTP110N12T2 TrenchT2TM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 120V = 110A   14m TO-263AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 120 V VDGR TJ = 25C to 175C, RGS = 1M 120 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 110 A IDM TC = 25C, Pulse Width Limited by TJM 200 A IA TC = 25C 55 A EAS TC = 25C 800 mJ PD TC = 25C 517 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 120 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 350 A 11.4 D (Tab) D = Drain Tab = Drain Features         International Standard Packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Fast Intrinsic Rectifier High Current Handling Capability 14.0 m Easy to Mount Space Savings High Power Density Applications     © 2017 IXYS CORPORATION, All Rights Reserved DS G = Gate S = Source V 5 A VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 G              200 nA TJ = 150C TO-220AB (IXTP) Advantages V 4.5 D (Tab) Synchronous Rectification DC/DC Converters and Off-Line UPS Primary- Side Switch High Current Switching Applications DS100830A(5/17) IXTA110N12T2 IXTP110N12T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 46 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 78 S 6570 pF 586 pF 43 pF 21 ns 30 ns 29 ns 15 ns 120 nC 36 nC 30 nC Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Pins: 1 - Gate 2,4 - Drain 3 - Source 0.29 C/W RthJC RthCH TO-263 Outline TO-220 0.50  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 440 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IF = 0.5 • ID25, VGS = 0V IRM QRM -di/dt = 100A/s VR = 60V 64 ns 14.4 A 460 nC TO-220 Outline Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA110N12T2 IXTP110N12T2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 450 110 VGS = 15V 10V 9V 8V 100 90 VGS = 15V 10V 400 350 9V 80 7V I D - Amperes I D - Amperes 70 300 60 50 40 6V 8V 250 200 7V 150 30 100 20 6V 50 5V 10 5V 0 0 0 0.5 1 0 1.5 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. Normalized RDS(on) to ID = 55A Value vs. Junction Temperature 3.5 110 VGS = 15V 10V 8V 100 90 VGS = 10V 3.0 RDS(on) - Normalized 7V 80 I D - Amperes 5 VDS - Volts 70 6V 60 50 40 30 2.5 ID = 110A 2.0 ID = 55A 1.5 1.0 5V 20 0.5 10 4V 0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 VDS - Volts 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 55A vs. Drain Current 6 25 Fig. 6. Drain Current vs. Case Temperature 120 VGS = 10V 100 o TJ = 175 C 4 80 I D - Amperes RDS(on) - Normalized 5 3 60 40 2 o TJ = 25 C 1 20 0 0 0 50 100 150 200 250 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXTA110N12T2 IXTP110N12T2 Fig. 8. Transconductance Fig. 7. Input Admittance 160 200 o VDS = 10V TJ = - 40 C VDS = 10V 140 160 120 o g f s - Siemens I D - Amperes 25 C 120 80 o TJ = 150 C o 25 C 100 o 150 C 80 60 o 40 - 40 C 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 40 80 Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 200 240 Fig. 10. Gate Charge 800 10 VDS = 60V 700 I D = 55A 8 600 500 VGS - Volts I S - Amperes 120 I D - Amperes VGS - Volts 400 300 I G = 10mA 6 4 o TJ = 150 C 200 2 o TJ = 25 C 100 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 20 40 80 100 120 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10,000 C iss RDS(on) Limit 100 100μs 1,000 I D - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs VSD - Volts Coss 10 1ms 100 1 DC o TC = 25 C Crss f = 1 MHz 10ms o TJ = 175 C Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTA110N12T2 IXTP110N12T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 40 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 40 RG = 2Ω , VGS = 10V RG = 2Ω , VGS = 10V VDS = 60V 36 36 VDS = 60V o t r - Nanoseconds TJ = 25 C 28 t r - Nanoseconds 32 I D = 220A 24 32 28 24 I D = 110A 20 o TJ = 150 C 20 16 16 25 50 75 100 125 150 40 60 80 100 120 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 160 tf 140 td(off) 55 40 50 35 tf o 80 35 60 30 I D = 220A 5 15 0 5 6 7 8 9 70 60 I D = 220A 50 40 I D = 110A 10 20 20 25 10 30 50 75 100 10 150 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) 80 40 o TJ = 150 C 14 30 13 20 12 80 100 120 140 160 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 180 200 10 220 90 80 VDS = 60V I D = 110A 60 70 50 60 I D = 220A 40 50 30 40 20 30 10 20 0 10 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds 15 td(off) o t d(off) - Nanoseconds 50 o 100 TJ = 150 C, VGS = 10V 70 60 TJ = 25 C 60 tf 80 70 VDS = 60V 16 90 t f - Nanoseconds tf RG = 2Ω, VGS = 10V 40 80 15 20 17 td(off) 20 25 18 90 25 40 0 t f - Nanoseconds t f - Nanoseconds 40 I D = 110A 19 220 t d(off) - Nanoseconds 100 4 200 VDS = 60V 30 t d(on) - Nanoseconds t r - Nanoseconds 45 3 180 RG = 2Ω, VGS = 10V VDS = 60V 2 160 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature TJ = 150 C, VGS = 10V 120 140 I D - Amperes IXTA110N12T2 IXTP110N12T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_110N12T2 (G5-N12)5-03-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.