IXTP12N50PM

PolarTM Power MOSFET IXTP12N50PM VDSS ID25 RDS(on) (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 6 30 A A IA EAS TC = 25°C TC = 25°C 12 600 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ =150°C 10 V/ns PD TC = 25°C 50 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 g TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 250μA 500 VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 6A, Note 1 V 5.5 Isolated Tab D S G = Gate S = Source D = Drain Features Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Characteristic Values Min. Typ. Max. VGS(th) G Easy to mount Space savings V ±100 nA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 5 μA 250 μA 500 mΩ DS99448F(04/08) IXTP12N50PM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10V, ID = 6A, Note 1 7.5 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 13 S 1830 pF 182 pF 16 pF 22 ns 27 ns 65 ns tf 20 ns Qg(on) 29 nC 11 nC 10 nC td(on) tr VGS = 10V, VDS = 0.5 td(off) RG = 10Ω (External) Qgs VGS= 10V, VDS = 0.5 VDSS, ID = 6A VDSS, ID = 6A Qgd 2.5 °C/W RthJC Source-Drain Diode ISOLATED TO-220 (IXTP...M) 1 2 3 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 6A, -di/dt = 150A/μs, VR = 100V, VGS = 0V 300 ns μC A 2.8 18.2 Notes:1. Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP12N50PM Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 12 30 VGS = 10V 8V 24 21 8 7V I D - Amperes I D - Amperes VGS = 10V 27 10 6 4 18 15 7V 12 9 6 2 6V 6V 3 0 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Normalized to I D = 6A Value vs. Junction Temperature @ 125ºC 12 2.6 VGS = 10V 2.4 7V 8 6 6V 4 VGS = 10V 2.2 R D S ( o n ) - Normalized 10 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 2.0 1.8 1.6 ID = 12A 1.4 ID = 6A 1.2 1.0 0.8 2 0.6 5V 0 0.4 0 2 4 6 8 10 12 -50 -25 VD S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Curre nt v s. Case Te mpe rature Fig. 5. RDS(on) Normalized to I D = 6A Value vs. Drain Current 7 3.4 6 VGS = 10V 3.0 TJ = 125ºC 5 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 TJ = 25ºC 1.4 4 3 2 1.0 1 0.6 0 0 3 6 9 12 I D 15 18 - Amperes © 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXTP12N50PM Fig. 8. Transconductance 20 27 18 24 16 21 14 18 TJ = - 40ºC 15 25ºC 125ºC g f s - Siemens I D - Amperes Fig. 7. Input Admittance 12 TJ = 125 ºC 10 25ºC - 40ºC 8 12 9 6 6 4 3 2 0 0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 2 4 6 Fig. 9. Source Current vs. Source-To-Drain Voltage 10 12 14 16 18 20 24 27 30 - Amperes 10 9 VDS = 250V 8 ID = 6A 7 IG = 10m A 30 VG S - Volts 25 I S - Amperes D Fig. 10. Gate Charge 35 20 15 TJ = 125 ºC 6 5 4 3 10 2 TJ = 25ºC 5 1 0 0 0.4 0.5 0.6 0.7 VS D 0.8 0.9 0 1.0 3 6 9 - Volts Q 12 G 15 18 21 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 f = 1MHz RDS(on) Limit Ciss I D - Amperes Capacitance - picoFarads 8 I V G S - Volts 1000 Coss 25µs 10 100µs 1ms 1 100 10ms TJ = 150ºC Crss DC TC = 25ºC 0.1 10 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTP12N50PM Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.