IXTP130N065T2

Preliminary Technical Information TrenchT2TM Power MOSFET IXTA130N065T2 IXTP130N065T2 VDSS ID25 = 65V = 130A Ω ≤ 6.6mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 65 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 65 V VGSM Transient ± 20 V 130 A 75 A 330 A ID25 TC = 25°C ILRMS Lead Current Limit, RMS IDM TC = 25°C, pulse width limited by TJM IA TC = 25°C 65 A EAS TC = 25°C 600 mJ PD TC = 25°C 250 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 G S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z International standard packages 175°C Operating Temperature z Avalanche rated z High current handling capability z Low RDS(on) z Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 65 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) z z z V 4.0 V ±200 nA 5 TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 Applications z μA 150 μA 6.6 mΩ z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density Automotive - Motor Drives - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100050(10/08) IXTA130N065T2 IXTP130N065T2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 38 TO-263 (IXTA) Outline 64 S 4800 pF 600 pF 90 pF 11 ns 42 ns 20 ns tf 17 ns Qg(on) 79 nC 22 nC 23 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.60 °C/W RthJC RthCH TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 130 A ISM Repetitive, Pulse width limited by TJM 520 A VSD IF = 65A, VGS = 0V, Note 1 1.3 V trr IF = 65A, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 33V 41 ns 2.9 A 60 nC TO-220 (IXTP) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA130N065T2 IXTP130N065T2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 140 350 VGS = 15V 10V 9V 120 8V 80 9V 250 ID - Amperes 100 ID - Amperes VGS = 15V 10V 300 7V 60 6V 40 200 8V 150 7V 100 6V 20 50 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 1.0 2.0 3.0 140 6.0 7.0 8.0 2.4 VGS = 15V 10V 9V VGS = 10V 2.2 8V 2.0 RDS(on) - Normalized 100 ID - Amperes 5.0 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 120 4.0 VDS - Volts VDS - Volts 7V 80 60 6V 40 1.8 I D = 130A 1.6 I D = 65A 1.4 1.2 1.0 0.8 20 0.6 5V 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 80 2.8 VGS = 10V 2.6 TJ = 175ºC 15V - - - - - 2.4 External Lead Current Limit 70 60 2.2 2.0 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 1.2 50 40 30 20 1.0 10 TJ = 25ºC 0.8 0.6 0 0 40 80 120 160 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA130N065T2 IXTP130N065T2 Fig. 7. Input Admittance Fig. 8. Transconductance 180 90 160 80 140 70 120 60 TJ = - 40ºC g f s - Siemens ID - Amperes 25ºC 100 80 TJ = 150ºC 25ºC - 40ºC 60 150ºC 50 40 30 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 270 9 240 140 160 180 200 VDS = 33V I D = 65A 8 TJ = 25ºC I G = 10mA 7 180 TJ = 150ºC VGS - Volts IS - Amperes 120 Fig. 10. Gate Charge 300 210 100 ID - Amperes 150 120 6 5 4 90 3 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 10 20 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 10,000 1,000 100 25µs ID - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss Coss 100 Lead Limit 100µs 1ms 10 Crss TJ = 175ºC TC = 25ºC f = 1MHz Single Pulse 10 0 5 10 15 20 25 30 35 40 VDS - Volts DC 10ms 100ms 1 1 10 100 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_130N065T2(V4)10-28-08-A IXTA130N065T2 IXTP130N065T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 80 80 RG = 5Ω 70 RG = 5Ω 70 VGS = 10V VGS = 10V 50 40 I D = 130A 30 I 20 D = 65A TJ = 25ºC VDS = 33V 60 VDS = 33V t r - Nanoseconds t r - Nanoseconds 60 50 40 30 20 TJ = 125ºC 10 10 0 0 25 35 45 55 65 75 85 95 105 115 125 60 70 80 90 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 36 TJ = 125ºC, VGS = 10V 140 VDS = 33V 32 45 28 40 24 100 20 I D = 130A, 65A 8 10 20 4 5 0 0 14 16 18 20 20 I D = 130A 15 5 25 20 35 45 55 tf 130 35 110 26 30 22 25 18 TJ = 25ºC 10 90 100 105 115 0 125 110 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 120 140 tf td(off) - - - - 120 TJ = 125ºC, VGS = 10V VDS = 33V 100 I D = 65A 90 80 70 60 I D = 130A 50 40 15 30 20 10 130 10 20 80 95 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds VDS = 33V TJ = 125ºC 40 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 5Ω, VGS = 10V 70 85 150 45 60 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 38 14 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 30 15 10 RG - Ohms 34 35 I D = 65A 25 40 12 40 VDS = 33V 30 12 10 45 RG = 5Ω, VGS = 10V 25 60 8 td(off) - - - - 30 16 0 50 tf 35 80 6 130 t d(off) - Nanoseconds 120 4 120 50 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - t f - Nanoseconds 160 110 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 180 tr 100 ID - Amperes IXTA130N065T2 IXTP130N065T2 Fig. 19. Maximum Transient Thermal Impedance Z (th )JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_130N065T2(V4)10-28-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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