IXTP140N055T2

IXTA140N055T2 IXTP140N055T2 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 140A  5.4m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 55 V VDGR TJ = 25C to 175C, RGS = 1M 55 V VGSM Transient 20 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 140 120 350 A A A IA TC = 25C 70 A EAS TC = 25C 600 mJ PD TC = 25C 180 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 55 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 50A, Notes 1 & 2  V Applications 4.0 V             200 nA 5 A 150 A 5.4 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS100067A(7/18) IXTA140N055T2 IXTP140N055T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, 0.5 • IDSS Qgd E 70 S 4760 pF 715 pF 92 pF 13 ns 35 ns 21 ns 17 ns 82 nC 22 nC 22 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.60 C/W RthJC RthCS TO-263 Outline TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, Pulse Width Limited by TJM 560 A VSD trr IRM QRM IF = 70A, VGS = 0V, Note 1 1.3 IF = 70A, VGS = 0V, -di/dt = 100A/s, VR = 27V TO-220 Outline E A oP A1 V 40 ns 2.5 A 50 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA140N055T2 IXTP140N055T2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 140 350 VGS = 15V 10V 9V 8V 120 80 60 8V 250 7V I D - Amperes I D - Amperes 100 9V VGS = 15V 10V 300 6V 40 200 150 7V 100 6V 20 50 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 VDS - Volts 2.2 140 VGS = 15V 10V 9V 8V 6 1.8 7V RDS(on) - Normalized I D - Amperes 5 VGS = 10V 2.0 100 80 6V 60 40 I D = 140A 1.6 I D = 70A 1.4 1.2 1.0 5V 20 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 1.6 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 140 VGS = 10V 15V 2.4 o TJ = 175 C 120 2.2 External Lead Current Limit 100 2.0 I D - Amperes R DS(on) - Normalized 4 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 120 3 VDS - Volts 1.8 1.6 1.4 1.2 80 60 40 1.0 20 o TJ = 25 C 0.8 0 0.6 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA140N055T2 IXTP140N055T2 Fig. 8. Transconductance 100 160 90 140 80 o TJ = - 40 C o 25 C 70 120 g f s - Siemens I D - Amperes Fig. 7. Input Admittance 180 100 o TJ = 150 C 80 o 25 C o - 40 C 60 60 o 150 C 50 40 30 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 VGS - Volts 140 160 180 200 80 90 10 VDS = 28V 9 I D = 70A 300 8 250 I G = 10mA 7 6 VGS - Volts I S - Amperes 120 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 200 150 100 5 4 3 o TJ = 150 C 2 o TJ = 25 C 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 10 20 30 40 50 60 70 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 RDS(on) Limit C iss 1,000 25μs 100 I D - Amperes Capacitance - PicoFarads 100 I D - Amperes Coss 100 100μs Lead Limit 1ms 10 Crss o TJ = 175 C 10ms o TC = 25 C f = 1MHz 10 0 5 100ms Single Pulse 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. DC 1 1 10 VDS - Volts 100 IXTA140N055T2 IXTP140N055T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 60 60 RG = 5Ω, VGS = 10V RG = 5Ω, VGS = 10V 50 VDS = 28V 50 VDS = 28V t r - Nanoseconds t r - Nanoseconds o 40 I D = 140A 30 I D = 70A 20 TJ = 25 C 40 30 20 o TJ = 125 C 10 10 0 0 25 35 45 55 65 75 85 95 105 115 70 125 80 90 100 140 25 I D = 140A, 70A 60 20 40 15 20 10 0 6 8 10 12 14 16 18 I D = 70A 40 25 20 10 15 0 25 20 35 45 55 VDS = 28V 105 115 10 125 28 25 24 20 20 o TJ = 25 C 15 10 110 120 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 130 tf td(off) 120 o TJ = 125 C, VGS = 10V VDS = 28V 100 100 80 80 I D = 70A 60 60 I D = 140A 40 16 20 12 140 0 40 20 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 30 100 95 140 120 32 t d(off) - Nanoseconds t f - Nanoseconds td(off) RG = 5Ω, VGS = 10V 90 85 140 t f - Nanoseconds tf 80 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 36 70 65 TJ - Degrees Centigrade 40 TJ = 125 C 20 I D = 140A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current o 30 30 RG - Ohms 35 35 VDS = 28V 5 4 td(off) RG = 5Ω, VGS = 10V t d(off) - Nanoseconds 30 50 t f - Nanoseconds VDS = 28V 80 140 40 tf 35 t d(on) - Nanoseconds t r - Nanoseconds td(on) o TJ = 125 C, VGS = 10V 100 130 60 40 tr 120 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 120 110 I D - Amperes TJ - Degrees Centigrade IXTA140N055T2 IXTP140N055T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_140N055T2 (V4) 7-10-18-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.