IXTP15N50L2

IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Linear L2TM Power MOSFETs w/ Extended FBSOA VDSS ID25 = = ≤ RDS(on) N-Channel Enhancement Mode Avalanche Rated 500V 15A Ω 480mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15 A IDM TC = 25°C, Pulse Width Limited by TJM 35 A IA EAS TC = 25°C TC = 25°C 15 750 A mJ PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220AB (IXTP) G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z Designed for Linear Operation International Standard Packages Avalanche Rated Molding Epoxies Meet UL 94 V-0 Flammability Classification Guaranteed FBSOA at 75°C Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) z z V 4.5 V ±100 nA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 z 25 μA 200 μA 480 mΩ Applications z z z z z © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators DS100054B(12/11) IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 4.5 6.3 Ciss VGS = 0V, VDS = 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = 10V, 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 10Ω (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd 8.0 TO-247 Outline S 4080 pF 265 pF 68 pF 38 ns 73 ns 110 ns 65 ns 123 nC 20 nC 72 nC 0.42 °C/W RthJC RthCS (TO-220) (TO-247) 0.50 0.25 1 = Gate 2 = Drain 3 = Source °C/W °C/W Safe Operating Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 400V, ID = 375mA, TC = 75°C, tp = 2s 150 W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. TO-220 Outline IS VGS = 0V 15 A ISM Repetitive, pulse width limited by TJM 60 A VSD IF = 15A, VGS = 0V, Note 1 1.5 V trr IF = 15A, -di/dt = 100A/μs, VR = 100V, VGS = 0V Note 570 ns 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain 1 = Gate 2 = Drain 3 = Source 4 = Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Fig. 1. Output Characteristics @ T J =25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 16 40 VGS = 20V 12V 10V 9V 14 30 8V 10 ID - Amperes ID - Amperes 12 VGS = 20V 14V 12V 10V 35 8 6 7V 4 6V 2 25 9V 20 8V 15 10 7V 5 5V 0 6V 5V 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 7.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 2.8 16 VGS = 20V 10V 9V 14 VGS = 10V 2.4 R DS(on) - Normalized 12 8V ID - Amperes 20 VDS - Volts 10 8 7V 6 I D = 15A 2.0 I D = 7.5A 1.6 1.2 6V 4 0.8 5V 2 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 16 3.0 VGS = 10V TJ = 125ºC 14 12 2.2 ID - Amperes R DS(on) - Normalized 2.6 1.8 TJ = 25ºC 1.4 10 8 6 4 1.0 2 0.6 0 0 5 10 15 20 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 25 30 35 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Fig. 7. Input Admittance Fig. 8. Transconductance 18 12 TJ = - 40ºC 16 10 14 25ºC TJ = 125ºC 25ºC - 40ºC 10 8 6 125ºC 8 g f s - Siemens ID - Amperes 12 6 4 4 2 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 2 4 6 8 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 40 14 14 16 18 20 VDS = 250V I D = 7.5A I G = 10mA 12 30 VGS - Volts IS - Amperes 12 Fig. 10. Gate Charge 45 35 25 20 10 8 6 TJ = 125ºC 15 4 10 TJ = 25ºC 2 5 0 0 0.5 0.6 0.7 0.8 0.9 1 0 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 1 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 10 ID - Amperes Coss 0.1 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA15N50L2 IXTP15N50L2 IXTH15N50L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 10 100µs I D - A m p e re s I D - A m p e re s 10 1ms 10ms 1 1ms 1 10ms 100ms TJ = 150ºC TJ = 150ºC DC TC = 25ºC Single Pulse 100ms TC = 75ºC Single Pulse 0.1 DC 0.1 10 100 VDS - Volts © 2011 IXYS CORPORATION, All Rights Reserved 1000 10 100 1000 VDS - Volts IXYS REF: T_15N50L2(6R)12-22-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.