IXTP18P10T

IXTY18P10T IXTA18P10T IXTP18P10T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = =  - 100V - 18A  120m P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 100 V VDGR TJ = 25C to 150C, RGS = 1M - 100 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C -18 A IDM TC = 25C, Pulse Width Limited by TJM - 60 A IA EAS TC = 25C TC = 25C -18 200 A mJ PD TC = 25C 83 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = - 250A - 2.5 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1   V  - 4.5 V Applications 50 nA - 3 A -100 A 120 m       © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS99966D(8/17) IXTY18P10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 8 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 13 S 2100 pF 185 pF 80 pF 19 ns 26 ns 44 ns 22 ns 39 nC 17 nC 9 nC 1.5 C/W RthJC RthCS IXTA18P10T IXTP18P10T TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V -18 A ISM Repetitive, Pulse Width Limited by TJM - 72 A VSD IF = IS, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = 0.5 • ID25, -di/dt = -100A/s VR = - 50V, VGS = 0V Note 1: Pulse test, t  300s, duty cycle, d  2%. 62 164 - 5.3  ns nC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY18P10T o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -18 -70 VGS = -10V - 9V - 8V -16 -14 VGS = -10V -60 - 9V -50 -12 - 7V I D - Amperes I D - Amperes IXTA18P10T IXTP18P10T -10 - 6V -8 -6 - 8V -40 - 7V -30 - 6V -20 -4 -10 - 5V -2 - 5V 0 0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 0 -2.0 -5 -10 -15 2.2 -18 VGS = -10V - 9V - 8V - 7V 2.0 -12 - 6V -10 -8 -6 - 5V VGS = -10V I D = -18A 1.6 I D = - 9A 1.4 1.2 1.0 -4 0.8 -2 0.6 0 0.4 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 9A Value vs. Drain Current 2.4 Fig. 6. Maximum Drain Current vs. Case Temperature -20 VGS = -10V 2.2 -18 o TJ = 125 C 2.0 -16 -14 I D - Amperes RDS(on) - Normalized -30 1.8 RDS(on) - Normalized I D - Amperes -14 -25 Fig. 4. RDS(on) Normalized to ID = - 9A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C -16 -20 VDS - Volts VDS - Volts 1.8 1.6 1.4 o TJ = 25 C -12 -10 -8 -6 1.2 -4 1.0 -2 0 0.8 0 -5 -10 -15 -20 -25 -30 -35 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -40 -45 -50 -55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY18P10T Fig. 7. Input Admittance Fig. 8. Transconductance 20 -24 IXTA18P10T IXTP18P10T TJ = - 40ºC 18 -20 16 o TJ = 125 C g f s - Siemens I D - Amperes 25ºC 14 -16 o 25 C o - 40 C -12 -8 12 125ºC 10 8 6 4 -4 2 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -6.5 0 -2 -4 -6 -8 VGS - Volts -10 -50 -9 VDS = - 50V -8 I D = - 9A -45 -14 -16 -18 -20 -22 -24 I G = -1mA -7 -35 -6 VGS - Volts I S - Amperes -40 -30 -25 o -5 -4 TJ = 125 C -3 -15 o TJ = 25 C -10 -2 -1 -5 0 0 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 0 -1.3 5 10 15 VSD - Volts 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 - 100 f = 1 MHz RDS(on) Limit 25μs 100μs Ciss 1,000 - 10 I D - Amperes Capacitance - PicoFarads -12 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -55 -20 -10 I D - Amperes Coss 100 1ms -1 10ms Crss 100ms o TJ = 150 C o TC = 25 C Single Pulse - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 -100 - 10 VDS - Volts -1000 IXTY18P10T 28 30 RG = 10Ω , VGS = -10V 29 RG = 10Ω , VGS = -10V VDS = - 50V VDS = - 50V 27 28 o TJ = 25 C 26 25 27 t r - Nanoseconds t r - Nanoseconds Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 29 IXTA18P10T IXTP18P10T I D = -18A 24 23 26 25 24 o TJ = 125 C 22 23 I D = - 9A 21 22 20 21 25 35 45 55 65 75 85 95 105 115 -9 125 -10 -11 -12 -13 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 30 tr 28 tf 70 o 50 I D = -18A, - 9A 22 40 20 30 18 20 16 10 14 16 18 20 22 24 26 28 46 22 21 38 20 34 25 35 45 55 54 td(off) o TJ = 25 C 39 36 o TJ = 125 C 20 19 -12 -13 -14 -15 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -16 -17 -18 t f - Nanoseconds t f - Nanoseconds 42 -11 95 105 115 30 125 tf td(off) 100 o TJ = 125 C, VGS = -10V 90 VDS = - 50V 50 80 I D = - 9A, -18A 45 70 40 60 35 50 30 40 25 30 33 20 20 30 15 10 10 12 14 16 18 20 22 24 RG - Ohms 26 28 30 32 34 t d(off) - Nanoseconds 23 t d(off) - Nanoseconds 45 -10 85 110 60 55 48 24 -9 75 65 51 VDS = - 50V 21 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 10Ω, VGS = -10V 22 42 I D = -18A, - 9A TJ - Degrees Centigrade tf 25 50 23 30 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 26 54 VDS = - 50V RG - Ohms 27 -18 td(off) 19 0 14 -17 RG = 10Ω, VGS = -10V 24 t f - Nanoseconds 24 12 -16 t d(off) - Nanoseconds t r - Nanoseconds 60 t d(on) - Nanoseconds VDS = - 50V 10 -15 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 25 80 td(on) TJ = 125 C, VGS = -10V 26 -14 I D - Amperes TJ - Degrees Centigrade IXTY18P10T IXTA18P10T IXTP18P10T Fig. 19. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 BOTTOM VIEW 4 H 0.34 [8.7] 6.50MIN A oP D1 D H E L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_18P10T(A1-810) 11-05-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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