IXTP1N100

High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS(on) N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM 6 A Maximum Ratings 1.5 A IAR EAR TC = 25°C 6 mJ EAS TC = 25°C 200 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω PD TC = 25°C 3 V/ns 54 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md VDSS ID25 Mounting torque 1.13/10 Nm/lb.in. Weight 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 TO-220AB (IXTP) GD D (TAB) S TO-263 AA (IXTA) G G = Gate, S = Source, S D (TAB) D = Drain, TAB = Drain Features y International standard packages y High voltage, Low RDS (on) HDMOSTM process y Rugged polysilicon gate cell structure y Fast switching times Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 25 µA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 1.0A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C V 4.5 V ±100 nA 25 500 µA µA 11 Ω Applications y Switch-mode and resonant-mode power supplies y Flyback inverters y DC choppers y High frequency matching Advantages y Space savings y High power density 98545C(08/04) IXTA 1N100 IXTP 1N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 1.0A, pulse test 0.8 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1.5 S 400 pF 37 pF Crss 13 pF td(on) 18 ns 19 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A td(off) RG = 18Ω, (External) 20 ns 18 ns 14.5 nC 3.0 nC 7.5 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A Qgd RthJC RthCK 2.3 (IXTP) 0.50 Source-Drain Diode TO-220 AD Dimensions Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 1.5 A 6 A 1.8 V 710 TO-263 AA Outline ns 1. 2. 3. 4. Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Gate Drain Source Drain Bottom Side 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTA 1N100 IXTP 1N100 Fig. 1. Output Characteris tics @ 25ºC Fig. 2. Extended Output Characte ris tics @ 25ºC 1.0 2.5 VGS = 10V 0.8 0.7 I D - Amperes VGS = 10V 8V 7V 6V 8V 7V 2.0 5.5V I D - Amperes 0.9 0.6 5V 0.5 0.4 0.3 0.2 6V 1.5 5.5V 1.0 5V 0.5 4.5V 0.1 4.5V 0.0 0.0 0 1 2 3 4 5 6 7 8 9 0 10 3 6 9 Fig. 3. Output Characte ris tics @ 125ºC 18 21 24 27 30 2.6 VGS = 10V 0.9 2.4 7V 6V VGS = 10V 2.2 R D S ( o n ) - Normalized 0.8 I D - Amperes 15 Fig. 4. Norm alized RDS(on) vs. Junction Tem pe rature 1.0 0.7 5V 0.6 0.5 0.4 0.3 4.5V 0.2 2 1.8 I D = 1.5A 1.6 I D = 1A 1.4 1.2 1 0.8 0.1 0.6 0.0 0.4 0 2 4 6 8 10 12 V D S - Volts 14 16 18 -50 20 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature Fig. 5. Norm alized RDS(on) vs . ID 1.6 2.4 VGS = 10V 2.2 1.4 TJ = 125ºC 1.2 2.0 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts V D S - Volts 1.8 1.6 1.4 1.0 0.8 0.6 0.4 1.2 TJ = 25ºC 1.0 0.2 0.0 0.8 0 0.5 1 1.5 I D - Amperes 2 2.5 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 1N100 IXTP 1N100 Fig. 8. Transconductance Fig. 7. Input Adm ittance 2.5 1.8 1.6 2.0 1.4 1.0 0.8 TJ = 125ºC 25ºC -40ºC 0.6 0.4 TJ = -40ºC g f s - Siemens I D - Amperes 1.2 25ºC 125ºC 1.5 1.0 0.5 0.2 0.0 0.0 3.5 4 4.5 5 5.5 6 0 0.2 0.4 0.6 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 1 1.2 1.4 1.6 1.8 14 16 Fig. 10. Gate Charge 10 4.0 3.5 3.0 I S - Amperes 0.8 I D - Amperes VG S - Volts 2.5 2.0 TJ = 125ºC 1.5 9 VDS = 500V 8 I D = 1A 7 I G = 1mA 6 5 4 3 1.0 2 TJ = 25ºC 0.5 1 0.0 0 0.4 0.5 0.6 0.7 V S D - Volts 0.8 0.9 0 2 4 6 8 10 12 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 1000 10.0 C iss R( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz 100 C oss 1.0 C rss 10 0.1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.