IXTP20N65X

Preliminary Technical Information IXTA20N65X IXTP20N65X IXTH20N65X X-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 20A  210m  N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 20 A IDM TC = 25C, Pulse Width Limited by TJM 40 A dv/dt IS  ID25, VDD  VDSS, TJ  150°C 30 V/ns PD TC = 25C 320 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220 (IXTP) GD S D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features    International Standard Packages Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)   V 5.5 V 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1  5 A 50 A 210 m Applications      © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100564E(6/15) IXTA20N65X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 9 Ciss Coss IXTP20N65X IXTH20N65X VGS = 0V, VDS = 25V, f = 1MHz 15 S 3.4  1390 pF 1060 pF 22 pF 77 232 pF pF 18 ns 30 ns 46 ns 22 ns 35 nC 7 nC 18 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.39 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 20 A ISM Repetitive, pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 10A, -di/dt = 100A/μs 350 4.45 25 VR = 100V ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA20N65X Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 20 45 VGS = 10V 8V 18 35 14 30 I D - Amperes I D - Amperes VGS = 10V 9V 40 16 12 7V 10 8 8V 25 20 15 6 7V 10 4 6V 2 5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 6V 0 4.5 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature 3.8 20 VGS = 10V 8V 18 VGS = 10V 3.4 16 RDS(on) - Normalized 3.0 7V 14 I D - Amperes 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 12 10 8 6V 6 2.6 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4 0.6 2 5V 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 -50 12 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 4.0 VGS = 10V 1.2 BV DSS / V GS(th) - Normalized 3.5 TJ = 125ºC R DS(on) - Normalized IXTP20N65X IXTH20N65X 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 5 10 15 20 25 30 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 35 40 45 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 IXTA20N65X Fig. 7. Maximum Drain Current vs. Case Temperature IXTP20N65X IXTH20N65X Fig. 8. Input Admittance 30 20 25 16 I D - Amperes I D - Amperes 20 12 8 15 TJ = 125ºC 25ºC - 40ºC 10 4 5 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 24 60 TJ = - 40ºC 50 25ºC 16 40 I S - Amperes g f s - Siemens 20 125ºC 12 8 30 TJ = 125ºC 20 TJ = 25ºC 4 10 0 0 0 5 10 15 20 25 30 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 10,000 VDS = 325V V GS - Volts 8 Capacitance - PicoFarads I D = 10A I G = 10mA 6 4 C iss 1,000 Coss 100 2 f = 1 MHz Crss 10 0 0 5 10 15 20 25 30 35 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTA20N65X Fig. 13. Output Capacitance Stored Energy IXTP20N65X IXTH20N65X Fig. 14. Forward-Bias Safe Operating Area 100 16 RDS(on) Limit 14 25µs 10 10 ID - Amperes EOSS - MicroJoules 12 8 6 4 100µs 1 1ms 0.1 TJ = 150ºC DC 10ms 100ms TC = 25ºC Single Pulse 2 0 0.01 0 100 200 300 400 500 600 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_20N65X(J4) 6-17-15-A IXTA20N65X IXTP20N65X IXTH20N65X TO-247 Outline TO-263 Outline D A A2 A2 TO-220 Outline E A oP Q A1 + R D2 0P1 H1 1 D2 D S + D1 D Q A + 0K M D B M 0P O B E 2 3 4 ixys option L1 C D1 E1 L E1 A2 EJECTOR A1 L1 c L 1 = Gate 2 = Drain 3 = Source 4 = Drain b b2 b4 e + J M CAM O e c e1 Bottom Side IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source PINS: 1 - Gate 2, 4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.