IXTP20N65XM

IXTP20N65XM X-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 20A  210m  (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 20 A IDM TC = 25C, Pulse Width Limited by TJM 40 A dv/dt IS  ID25, VDD  VDSS, TJ  150°C 30 V/ns PD TC = 25C 63 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight G G = Gate S = Source       BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  RDS(on) VGS = 10V, ID = 10A, Note 1  V    100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications V 5.5 D = Drain Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 5 A 50 A 210 m DS100588F(11/18) IXTP20N65XM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 10A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 9 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 15 S 3.4  1390 pF 1060 pF 22 pF 77 232 pF pF 18 ns 30 ns 46 ns 22 ns 35 nC 7 nC 18 nC Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 10A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd OVERMOLDED TO-220 (IXTP...M) oP 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source 2.0 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 20 A ISM Repetitive, pulse Width Limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 10A, -di/dt = 100A/μs 350 4.45 25 ns C A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP20N65XM o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 20 45 VGS = 10V 8V 18 16 35 14 30 I D - Amperes I D - Amperes VGS = 10V 9V 40 12 7V 10 8 8V 25 20 15 6 7V 10 4 6V 2 5 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 VDS - Volts 3.8 20 VGS = 10V 8V 3.0 14 7V RDS(on) - Normalized I D - Amperes 30 VGS = 10V 3.4 16 12 10 8 6V 6 2.6 I D = 20A 2.2 I D = 10A 1.8 1.4 1.0 4 0.6 2 5V 0.2 0 0 4.0 1 2 3 4 5 6 7 8 9 10 11 -50 12 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 3.5 o TJ = 125 C RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 18 20 VDS - Volts 3.0 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 5 10 15 20 25 30 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 35 40 45 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 IXTP20N65XM Fig. 7. Input Admittance Fig. 8. Transconductance 30 24 o 25 20 20 16 g f s - Siemens I D - Amperes TJ = - 40 C 15 o TJ = 125 C 10 o 25 C o 25 C o 125 C 12 8 o - 40 C 5 4 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 5 10 VGS - Volts 15 20 25 30 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 60 VDS = 325V 50 I D = 10A 8 I G = 10mA V GS - Volts I S - Amperes 40 30 o TJ = 125 C 6 4 20 o TJ = 25 C 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 10 VSD - Volts 15 20 25 30 35 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 16 10,000 12 E OSS - MicroJoules Capacitance - PicoFarads 14 Ciss 1,000 Coss 100 10 8 6 4 f = 1 MHz 2 Crss 10 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXTP20N65XM Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 100 RDS(on) Limit 25μs 1 100μs 1 1ms 0.1 10ms 100ms o TJ = 150 C o TC = 25 C Single Pulse 0.01 10 100 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 1,000 Z (th)JC - K / W I D - Amperes 10 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: T_20N65X(J4) 6-17-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.