IXTP230N04T4M

Preliminary Technical Information IXTP230N04T4M TrenchT4TM Power MOSFET VDSS ID25 RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 40V = 230A  2.9m  OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient 15 V ID25 ILRMS IDM TC = 25C, Limited by TJM Lead Current Limit, RMS TC = 25C, Pulse Width Limited by TJM 230 120 700 A A A IA EAS TC = 25C TC = 25C 100 600 A mJ PD TC = 25C 40 W -55 ... +175 175 -55 ... +175 C C C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight G DS G = Gate S = Source Isolated Tab D = Drain Features        Plastic Overmolded Tab International Standard Package 175°C Operating Temperature High Current Handling Capability Avalanche Rated 2500V~ Electrical Isolation Low RDS(on) Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V             200 nA 5 TJ = 150C RDS(on) Applications V 4.0 VGS = 10V, ID = 0.5 • ID25, Notes 1,2 © 2018 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density A 250 A 2.9 m • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-Mode Power Supplies • Electronics Ballast Application • Class D Audio Amplifiers DS100812B(11/18) IXTP230N04T4M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max. 100 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS 170 S 1.2  7400 pF 1115 pF 760 pF 40 ns 143 ns 85 ns 82 ns 140 nC 35 nC 53 nC 0.50 3.75 C/W C/W OVERMOLDED TO-220 (IXTP...M) oP 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 230 A ISM Repetitive, Pulse width limited by TJM 920 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr IF = 115A, VGS = 0V IRM QRM -di/dt = 100A/s VR = 30V 32 ns 1.6 A 25.6 nC Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP230N04T4M o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 400 240 VGS = 15V 10V 9V 200 I D - Amperes I D - Amperes 120 7V 80 9V 300 8V 160 VGS = 10V 350 8V 250 200 150 7V 100 40 50 6V 6V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 1 2 3 4 2.0 240 VGS = 15V 10V 9V 7 8 9 10 VGS = 10V 8V 1.8 RDS(on) - Normalized I D - Amperes 6 Fig. 4. Normalized RDS(on) to ID = 115A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 200 5 VDS - Volts VDS - Volts 160 7V 120 80 6V 40 1.6 ID = 230A 1.4 ID = 115A 1.2 1.0 0.8 5V 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 VDS - Volts Fig. 5. Normalized RDS(on) to ID = 115A vs. Drain Current 2.2 VGS = 10V 15V 2.0 75 100 125 150 175 Fig. 6. Input Admittance 180 VDS = 10V 160 o TJ = 175 C 140 1.8 120 1.6 I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade 1.4 1.2 100 80 o TJ = 150 C o 60 o TJ = 25 C 1.0 40 0.8 20 25 C o - 40 C 0 0.6 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 4.0 4.5 5.0 5.5 6.0 VGS - Volts 6.5 7.0 7.5 IXTP230N04T4M Fig. 7. Transconductance Fig.8. Forward Voltage Drop of Intrinsic Diode 500 300 450 o TJ = - 40 C VDS = 10V 250 400 200 o 25 C 300 250 I S - Amperes g f s - Siemens 350 o 150 C 200 150 o TJ = 150 C 100 150 o TJ = 25 C 100 50 50 0 0 20 40 60 80 100 120 140 160 180 0 200 0.3 0.4 0.5 0.6 0.7 0.8 I D - Amperes 1.0 1.1 1.2 1.3 1.4 1.5 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 10 VDS = 20V 9 Ciss Capacitance - PicoFarads I D = 115A 8 I G = 10mA 7 V GS - Volts 0.9 VSD - Volts 6 Coss 1,000 5 4 3 Crss 2 f = 1 MHz 1 0 100 0 20 40 60 80 100 120 140 0 5 10 QG - NanoCoulombs 15 20 25 30 35 40 VDS - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 10 1,000 RDS(on) Limit 25μs 1 Z(th)JC - K / W I D - Amperes 100 100μs External Lead Current Limit 0.1 10 0.01 o TJ = 175 C 1ms o TC = 25 C Single Pulse 10ms DC 1 1 10 100ms 100 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 100 IXTP230N04T4M Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 200 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 200 RG = 10Ω , VGS = 10V VDS = 20V 180 t r - Nanoseconds 180 t r - Nanoseconds RG = 10Ω , VGS = 10V VDS = 20V I D = 230A 160 140 I D = 115A o 160 TJ = 25 C 140 120 o TJ = 150 C 120 100 100 25 50 75 100 125 150 110 130 150 170 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 1000 tr 900 300 td(on) 270 600 180 I D = 115A 150 400 120 I D = 230A 300 230 90 200 60 100 30 130 td(off) 120 RG = 10Ω, VGS = 10V VDS = 20V 100 110 I D = 115A 80 100 60 90 40 80 I D = 230A 20 0 110 20 30 40 50 60 70 25 80 50 75 100 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 105 td(off) 140 600 tf 130 500 RG = 10Ω, VGS = 10V 100 85 90 80 t f - Nanoseconds o TJ = 150 C 90 td(off) 550 o VDS = 20V t d(off) - Nanoseconds 110 650 TJ = 150 C, VGS = 10V 120 95 60 150 400 450 I D = 230A I D = 115A 300 350 200 250 100 150 t d(off) - Nanoseconds VDS = 20V 100 t f - Nanoseconds 70 0 0 10 t d(off) - Nanoseconds 210 t f - Nanoseconds VDS = 20V t d(on) - Nanoseconds t r - Nanoseconds tf 120 240 700 500 210 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 140 o TJ = 150 C, VGS = 10V 800 190 I D - Amperes 80 o TJ = 25 C 75 70 70 110 130 150 170 190 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 210 60 230 0 50 10 20 30 40 50 60 RG - Ohms IXYS REF: T_230N04T4 (T4-M04) 3-13-17-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.