IXTP260N055T2

IXTA260N055T2 IXTP260N055T2 TrenchT2TM Power MOSFET VDSS ID25 = =  RDS(on) N-Channel Enhancement Mode Avalanche Rated 55V 260A  3.3m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 55 V VDGR TJ = 25C to 175C, RGS = 1M 55 V VGSM Transient 20 V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 260 120 780 A A A IA TC = 25C 100 A EAS TC = 25C 600 mJ PD TC = 25C 480 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 55 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 50A, Notes 1 & 2  V Applications 4.0 V             200 nA 5 A 150 A 3.3 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS100028B(7/18) IXTA260N055T2 IXTP260N055T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 28V, ID = 100A RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd E 94 S 10.8 nF 1460 pF 215 pF 20 ns 27 ns 36 ns 24 ns 140 nC 52 nC 32 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 60.12 [3.0] 0.10 [2.5] 0.06 [1.6] 0.31 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD trr IRM QRM IF = 100A, VGS = 0V, Note 1 260 A 1000 A 1.3 IF = 130A, VGS = 0V, -di/dt = 100A/s, VR = 27V TO-220 Outline E A oP A1 V 60 ns 3.4 A 102 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA260N055T2 IXTP260N055T2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 350 VGS = 15V 10V 9V 240 8V VGS = 15V 10V 9V 300 8V 200 7V 160 I D - Amperes I D - Amperes 250 120 80 7V 150 6V 100 6V 40 200 50 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 0.4 0.8 1.2 2.2 VGS = 15V 10V 9V 2.4 2.8 3.2 3.6 VGS = 10V 2.0 8V 200 RDS(on) - Normalized 1.8 7V I D - Amperes 2.0 Fig. 4. RDS(on) Normalized to ID = 130A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 240 1.6 VDS - Volts VDS - Volts 160 120 6V 80 I D = 260A 1.6 I D = 130A 1.4 1.2 1.0 40 0.8 5V 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -50 1.8 -25 0 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 140 2.2 120 o External Lead Current Limit TJ = 175 C 2.0 100 1.8 I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 130A Value vs. Drain Current 2.4 25 VGS = 10V 15V 1.6 1.4 1.2 80 60 o TJ = 25 C 40 1.0 20 0.8 0 0.6 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXTA260N055T2 IXTP260N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 o TJ = - 40 C 180 120 o 25 C 160 100 g f s - Siemens I D - Amperes 140 120 100 o TJ = 150 C 80 o 25 C o - 40 C 60 o 150 C 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 VGS - Volts 120 140 160 180 200 220 Fig. 10. Gate Charge 360 10 320 9 280 8 VDS = 28V I D = 130A I G = 10mA 7 240 6 V GS - Volts I S - Amperes 100 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 160 120 5 4 o 3 TJ = 150 C 80 2 o TJ = 25 C 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 60 80 100 120 140 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 RDS(on) Limit f = 1 MHz 25μs C iss 10,000 100μs - Amperes 100 External Lead Current Limit 1ms D Coss I Capacitance - PicoFarads 80 1,000 10 o 10ms 100ms TJ = 175 C Crss o TC = 25 C Single Pulse 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTA260N055T2 IXTP260N055T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 40 32 RG = 2Ω , VGS = 10V 36 t r - Nanoseconds I D = 200A 28 VDS = 28V o TJ = 125 C 30 32 t r - Nanoseconds RG = 2Ω , VGS = 10V 31 VDS = 28V 24 I D = 100A 29 28 27 20 26 o 16 TJ = 25 C 25 12 24 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 55 80 50 70 50 60 40 40 30 20 0 4 tf td(off) 6 8 10 12 14 50 40 45 I D = 200A, 100A 35 35 25 30 20 20 25 10 15 16 25 35 45 55 60 55 VDS = 28V TJ = 125 C 28 45 24 40 o TJ = 25 C 35 tf 225 TJ = 125 C, VGS = 10V 20 125 100 75 80 50 60 40 0 © 2018 IXYS CORPORATION, All Rights Reserved 140 100 25 I D - Amperes 160 I D = 100A, 200A 120 20 200 180 180 125 8 160 200 VDS = 28V 150 25 140 220 td(off) 175 12 120 115 o 200 30 100 105 240 250 16 80 95 20 2 4 6 8 10 RG - Ohms 12 14 16 t d(off) - Nanoseconds 50 o t d(off) - Nanoseconds t f - Nanoseconds td(off) RG = 2Ω, VGS = 10V 20 85 275 t f - Nanoseconds tf 32 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 65 36 65 TJ - Degrees Centigrade 44 40 40 30 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 60 55 VDS = 28V RG - Ohms 40 200 t d(off) - Nanoseconds 60 80 2 180 60 45 t d(on) - Nanoseconds I D = 200A, 100A 100 160 RG = 2Ω, VGS = 10V VDS = 28V 120 t r - Nanoseconds td(on) o TJ = 125 C, VGS = 10V 90 t f - Nanoseconds tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 160 140 120 I D - Amperes IXTA260N055T2 IXTP260N055T2 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_260N055T2 (V6) 7-10-18-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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