IXTP26P10T

IXTY26P10T IXTA26P10T IXTP26P10T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = =  - 100V - 26A  90m P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 100 V VDGR TJ = 25C to 150C, RGS = 1M - 100 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 26 A IDM TC = 25C, Pulse Width Limited by TJM - 80 A IA EAS TC = 25C TC = 25C - 26 300 A mJ PD TC = 25C 150 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = - 250A - 2.5 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1   V  - 4.5 V Applications 50 nA -10 A - 250 A 90 m       © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100291B(8/17) IXTY26P10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 17 S 3820 pF 280 pF 93 pF 20 ns 15 ns 37 ns 11 ns 52 nC 18 nC 16 nC 0.83 C/W RthJC RthCS IXTA26P10T IXTP26P10T TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 26 A ISM Repetitive, Pulse Width Limited by TJM -104 A VSD IF = IS, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = 0.5 • ID25, -di/dt = -100A/s VR = - 50V, VGS = 0V Note 1: Pulse test, t  300s, duty cycle, d  2%. 70 210 -6  ns nC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY26P10T o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C -28 -100 VGS = -10V - 9V -24 -80 - 8V - 9V -70 - 7V I D - Amperes I D - Amperes VGS = -10V -90 -20 -16 -12 - 6V -8 - 8V -60 -50 -40 - 7V -30 - 6V -20 - 5V -4 -10 - 4V 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 - 5V 0 0 -2.4 -5 -10 -15 -25 -30 Fig. 4. RDS(on) Normalized to ID = -13A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.0 -28 VGS = -10V - 9V - 8V VGS = -10V 1.8 -20 RDS(on) - Normalized -24 -20 VDS - Volts VDS - Volts I D - Amperes IXTA26P10T IXTP26P10T - 7V -16 - 6V -12 - 5V -8 1.6 I D = - 26A I D = -13A 1.4 1.2 1.0 0.8 -4 - 4V 0 0.6 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = -13A Value vs. Drain Current 2.6 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 6. Maximum Drain Current vs. Case Temperature -30 VGS = -10V 2.4 -25 2.2 TJ = 125 C 2.0 I D - Amperes RDS(on) - Normalized o 1.8 1.6 1.4 -20 -15 -10 o TJ = 25 C 1.2 -5 1.0 0 0.8 0 -10 -20 -30 -40 -50 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -60 -70 -80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY26P10T Fig. 8. Transconductance Fig. 7. Input Admittance -40 IXTA26P10T IXTP26P10T 30 o TJ = - 40 C -35 25 o TJ = 125 C o -25 25 C 20 o 25 C o - 40 C g f s - Siemens I D - Amperes -30 -20 -15 o 125 C 15 10 -10 5 -5 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 0 -5 -10 -15 -20 -25 -30 -35 -40 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -80 -10 -9 -70 VDS = - 50V I D = -13A I G = -1mA -8 -60 VGS - Volts I S - Amperes -7 -50 -40 -30 -5 -4 -3 o TJ = 125 C -20 -6 -2 o TJ = 25 C -10 -1 0 -0.3 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 0 -1.4 5 10 15 20 Fig. 11. Capacitance 10,000 25 30 35 45 50 55 Fig. 12. Forward-Bias Safe Operating Area - 100 25μs RDS(on) Limit Ciss 100μs - 10 1,000 I D - Amperes Capacitance - PicoFarads 40 QG - NanoCoulombs VSD - Volts Coss 100 1ms 10ms 100ms -1 DC C rss o TJ = 150 C o TC = 25 C Single Pulse f = 1 MHz - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 - 10 - 100 VDS - Volts - 1000 IXTY26P10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 18 18 IXTA26P10T IXTP26P10T RG = 3Ω, VGS = -10V RG = 3Ω, VGS = -10V 16 I D = -13A 15 VDS = - 50V 17 VDS = - 50V t r - Nanoseconds t r - Nanoseconds 17 I D = - 26A 14 13 16 o TJ = 25 C 15 14 o TJ = 125 C 13 12 12 25 35 45 55 65 75 85 95 105 115 125 -12 -14 -16 -18 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 50 tr td(on) tf o I D = -13A, - 26A 20 20 10 t f - Nanoseconds 25 0 6 7 8 9 10 11 12 13 14 50 11 40 10 30 20 8 25 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 48 35 44 30 td(off) tf RG = 3Ω, VGS = -10V td(off) 70 o o o TJ = 25 C, 125 C 32 9 8 -16 -18 -20 I D - Amperes -22 © 2017 IXYS CORPORATION, All Rights Reserved -24 -26 t f - Nanoseconds 36 25 60 I D = -13A 20 50 15 28 10 24 5 40 I D = - 26A 30 20 3 4 5 6 7 8 9 10 RG - Ohms 11 12 13 14 15 t d(off) - Nanoseconds 11 t d(off) - Nanoseconds 40 -14 80 VDS = - 50V 12 10 10 125 TJ = 125 C, VGS = -10V VDS = - 50V t f - Nanoseconds 60 12 15 14 -12 td(off) RG = 3Ω, VGS = -10V 9 10 13 70 I D = -13A, - 26A 15 5 -26 t d(off) - Nanoseconds 30 4 -24 VDS = - 50V t d(on) - Nanoseconds t r - Nanoseconds 13 30 VDS = - 50V 3 -22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 14 35 TJ = 125 C, VGS = -10V 40 -20 I D - Amperes TJ - Degrees Centigrade IXTY26P10T IXTA26P10T IXTP26P10T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 BOTTOM VIEW 4 H 0.34 [8.7] 6.50MIN A oP D1 D H E L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_26P10T(A2-P11) 10-21-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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