IXTP2N60P

IXTY2N60P IXTP2N60P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 600V = 2A  5.1  TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 2 A IDM TC = 25C, Pulse Width Limited by TJM 4 A IA TC = 25C 2 A EAS TC = 25C 150 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 56 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 0.35 3.00 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-220 TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 25μA 600 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 5.0 V 50 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  Robotics and Servo Controls  1 A 50 A 5.1  DS99422G(6/17) IXTY2N60P IXTP2N60P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 1.4 VDS = 20V, ID = 0.5 • ID25, Note 1 TO-252 AA Outline A 2.2 S 240 pF 28 pF Crss 3.5 pF Qg(on) 7.0 nC 2.5 nC 2.1 nC 28 ns 20 ns 60 ns 23 ns Ciss Coss Qgs VGS = 0V, VDS = 25V, f = 1MHz VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) c2 L3 A1 L4 1 2 A2 3 L1 L b2 e e1 e1 H 1 - Gate 2,4 - Drain 3 - Source c L2 0 5.55MIN OPTIONAL 6.50MIN 4 6.40 2.85MIN BOTTOM VIEW 2.28 1.25MIN LAND PATTERN RECOMMENDATION 2.25 C/W RthJC RthCS A E b3 4 TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 2 A ISM Repetitive, Pulse Width Limited by TJM 6 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 2A, -di/dt = 100A/μs, VR = 100V TO-220 Outline E 400 A oP A1 H1 Q D2 D ns D1 E1 A2 EJECTOR PIN L1 L Note 1. Pulse test, t  300s, duty cycle, d 2%. e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY2N60P IXTP2N60P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 2.0 4.0 VGS = 10V 1.8 7V 1.6 3.0 I D - Amperes 1.4 I D - Amperes VGS = 10V 3.5 1.2 1.0 0.8 2.5 7V 2.0 1.5 0.6 1.0 0.4 6V 0.5 6V 0.2 0.0 0.0 0 2 4 6 8 10 12 0 5 10 VDS - Volts 20 25 30 Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.2 2.0 VGS = 10V 7V 1.8 15 VDS - Volts VGS = 10V 2.8 I D - Amperes 1.4 RDS(on) - Normalized 1.6 6V 1.2 1.0 0.8 0.6 0.4 I D = 2A 2.4 2.0 I D = 1A 1.6 1.2 5V 0.8 0.2 0.4 0.0 0 4 8 12 16 20 24 -50 28 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current 3.0 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 2.0 VGS = 10V 1.8 o 2.5 TJ = 125 C 1.6 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 o TJ = 25 C 1.5 1.4 1.2 1.0 0.8 0.6 1.0 0.4 0.2 0.0 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 2.8 3.2 3.6 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY2N60P IXTP2N60P Fig. 8. Transconductance Fig. 7. Input Admittance 4.5 3.6 VDS = 10V o 2.8 3.5 2.4 3.0 2.0 1.6 o TJ = 125 C 1.2 o 25 C o - 40 C 0.8 TJ = - 40 C VDS = 10V 4.0 g f s - Siemens I D - Amperes 3.2 o 25 C 2.5 o 125 C 2.0 1.5 1.0 0.5 0.4 0.0 0.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 0.5 1 1.5 2.5 3 3.5 4 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 6.0 9 5.0 VDS = 300V I D = 1A 8 I G = 10mA 7 V GS - Volts 4.0 I S - Amperes 2 I D - Amperes VGS - Volts 3.0 6 5 4 o TJ = 125 C 2.0 3 o TJ = 25 C 2 1.0 1 0.0 0 0.4 0.5 0.6 0.7 0.8 0.9 0.0 1.0 1.0 2.0 VSD - Volts 3.0 4.0 5.0 6.0 7.0 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10 1,000 Ciss 100 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz Coss 10 1 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_2N60P(1J) 6-19-17-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.