IXTP2N65X2

IXTY2N65X2 IXTP2N65X2 X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 2A  2.3  N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 2 A IDM TC = 25C, Pulse Width Limited by TJM 4 A IA TC = 25C 1 A EAS TC = 25C 100 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 55 W -55 ... +150 C TJ V TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 0.35 3.00 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-220 D (Tab) TO-220 (IXTP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings V Applications V  100 nA  5.0 5 A 100 A 2.3    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls  DS100654D(6/18) IXTY2N65X2 IXTP2N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 1.1 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-252 AA Outline A 1.8 S 14  180 pF 129 pF 0.7 pF td(on) tr td(off) tf Energy related Time related 1 2 22 45 VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd L1 H L b2 e e1 e1 1 - Gate 2,4 - Drain 3 - Source c L2 0 5.55MIN OPTIONAL 4 pF pF 15 ns 19 ns 20 ns 14 ns 4.3 nC 0.8 nC 2.1 nC 6.40 2.85MIN BOTTOM VIEW 2.28 1.25MIN LAND PATTERN RECOMMENDATION 2.27 C/W RthJC RthCS A2 3 6.50MIN Qg(on) Qgs c2 L3 A1 L4 Effective Output Capacitance Co(er) Co(tr) A E b3 4 TO-220 C/W 0.50 TO-220 Outline Source-Drain Diode E Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max H1 D2 D VGS = 0V 2 A ISM Repetitive, pulse Width Limited by TJM 8 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 1A, -di/dt = 100A/μs D1 E1 A2 EJECTOR PIN VR = 100V A1 Q IS 137 508 7.4 A oP L1 L ns nC A e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY2N65X2 IXTP2N65X2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 2.0 4.0 VGS = 10V 8V 7V VGS = 10V 8V 3.5 1.5 3.0 7V I D - Amperes I D - Amperes 6V 1.0 5.5V 0.5 2.5 6V 2.0 1.5 1.0 5.5V 0.5 5V 5V 0.0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 4 8 12 VDS - Volts 20 24 28 32 Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 4.5 2.0 VGS = 10V 7V VGS = 10V 4.0 3.5 1.5 6V RDS(on) - Normalized I D - Amperes 16 VDS - Volts 1.0 5V 0.5 3.0 I D = 2A 2.5 2.0 I D = 1A 1.5 1.0 0.5 4V 0.0 0.0 0 4.5 1 2 3 4 5 6 7 8 9 10 11 12 -50 13 25 50 75 100 Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 125 150 125 150 2.0 1.8 o TJ = 125 C 3.5 1.6 3.0 I D - Amperes RDS(on) - Normalized 0 TJ - Degrees Centigrade VGS = 10V 4.0 -25 VDS - Volts 2.5 o TJ = 25 C 2.0 1.4 1.2 1.0 0.8 0.6 1.5 0.4 1.0 0.2 0.0 0.5 0.0 0.5 1.0 1.5 2.0 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 2.5 3.0 3.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTY2N65X2 IXTP2N65X2 Fig. 7. Input Admittance Fig. 8. Transconductance 2.8 3.0 o TJ = - 40 C 2.4 2.5 g f s - Siemens I D - Amperes 2.0 1.6 o TJ = 125 C 1.2 o 25 C o - 40 C o 25 C 2.0 1.5 o 125 C 1.0 0.8 0.5 0.4 0.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 6.5 0.4 0.8 1.2 VGS - Volts 1.6 2.0 2.4 2.8 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 6 VDS = 325V 5 I D = 1A 8 I G = 1mA VGS - Volts I S - Amperes 4 3 o TJ = 125 C 2 6 4 o TJ = 25 C 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 0.5 1 1.5 Fig. 11. Capacitance 2.5 3 3.5 4 4.5 Fig. 12. Output Capacitance Stored Energy 1,000 5.0 4.5 Ciss 4.0 100 EOSS - MicroJoules Capacitance - PicoFarads 2 QG - NanoCoulombs VSD - Volts Coss 10 Crss 1 3.5 3.0 2.5 2.0 1.5 1.0 f = 1 MHz 0.5 0 0.0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXTY2N65X2 IXTP2N65X2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance 10 10 RDS(on) Limit 25μs 1 100μs Z (th )JC - K / W I D - A m p e re s 1 0.1 0.1 o TJ = 150 C o TC = 25 C Single Pulse DC 1ms 10ms 0.01 10 100 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 1,000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS REF: T_2N65X2(Z1-R25T50) 6-05-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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