IXTP2N80

High Voltage MOSFET IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Energy Rated = 800 V = 2 A = 6.2 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 2 A IDM TC = 25°C, pulse width limited by TJM 8 A 2 A IAR EAR TC = 25°C 6 mJ EAS TC = 25°C 200 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω PD TC = 25°C 5 V/ns 54 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque 1.13/10 Nm/lb.in. Weight 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 TO-220AB (IXTP) GD D (TAB) S TO-263 AA (IXTA) G G = Gate, S = Source, S D (TAB) D = Drain, TAB = Drain Features y International standard packages y Low RDS (on) HDMOSTM process y Rugged polysilicon gate cell structure y Low package inductance (< 5 nH) - easy to drive and to protect Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 800 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved TJ = 125°C V 5.5 V y Fast switching times Applications y Switch-mode and resonant-mode power supplies ±100 nA y Flyback inverters y DC choppers 25 500 µA µA Advantages 6.2 Ω y Space savings y High power density 98541B(01/03) IXTA 2N80 IXTP 2N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1.0 2.0 S 440 pF 56 pF Crss 15 pF td(on) 15 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 18 ns td(off) RG 30 ns tf 15 ns Qg(on) 22 nC 5.5 nC 12 nC Qgs = 18Ω, (External) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC 2.3 RthCK (IXTP) Source-Drain Diode 0.5 TO-220 AD Dimensions Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 2 A ISM Repetitive; pulse width limited by TJM 8 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.8 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 510 TO-263 AA Outline ns 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.