IXTP2R4N50P

IXTY2R4N50P IXTP2R4N50P PolarTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 500V = 2.4A  3.75  TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 2.4 A IDM TC = 25C, Pulse Width Limited by TJM 4.5 A TO-220 (IXTP) IA TC = 25C 2.4 A EAS TC = 25C 100 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 56 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 0.35 3.00 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-220 GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 25μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 5.5 V 50 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 1 A 50 A 3.75 DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications   DS99445F(6/17) IXTY2R4N50P IXTP2R4N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 1.5 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50 (External) 2.5 S 240 pF 31 pF 4 pF 6.1 nC 1.8 nC 2.9 nC 24 ns 29 ns 65 ns 28 ns A E b3 4 c2 L3 A1 L4 1 2 A2 3 L1 L b2 e e1 e1 H 1 - Gate 2,4 - Drain 3 - Source c L2 0 5.55MIN OPTIONAL 6.50MIN 4 6.40 2.85MIN BOTTOM VIEW 2.28 1.25MIN LAND PATTERN RECOMMENDATION 2.25 C/W RthJC RthCS TO-252 AA Outline A TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 2.4 A ISM Repetitive, Pulse Width Limited by TJM 7.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 2.4A, -di/dt = 100A/μs, VR = 100V TO-220 Outline E 400 A oP A1 H1 Q D2 D ns D1 E1 A2 EJECTOR PIN L1 L Note 1. Pulse test, t  300s, duty cycle, d 2%. e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY2R4N50P IXTP2R4N50P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 2.4 4.5 VGS = 10V VGS = 10V 8V 4.0 2.0 7V 3.5 7V 3.0 I D - Amperes I D - Amperes 1.6 1.2 6V 2.5 2.0 6V 1.5 0.8 1.0 0.4 0.5 5V 5V 0.0 0.0 0 1 2 3 4 5 6 7 8 9 0 10 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 1.2A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.4 3.4 VGS = 10V 7V VGS = 10V 3.0 RDS(on) - Normalized 2.0 6V 1.6 I D - Amperes 20 VDS - Volts VDS - Volts 1.2 0.8 2.6 I D = 2.4A 2.2 I D = 1.2A 1.8 1.4 1.0 0.4 0.6 5V 0.0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 1.2A Value vs. Drain Current 3.0 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 VGS = 10V 2.4 o TJ = 125 C 2.6 2.0 2.2 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 o TJ = 25 C 1.4 1.6 1.2 0.8 1.0 0.4 0.6 0.0 0 0.5 1 1.5 2 2.5 3 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 3.5 4 4.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY2R4N50P IXTP2R4N50P Fig. 7. Input Admittance Fig. 8. Transconductance 4.0 4.0 3.5 3.5 3.0 3.0 o g f s - Siemens I D - Amperes TJ = - 40 C 2.5 o 2.0 TJ = 125 C 1.5 25 C o - 40 C o o 25 C 2.5 o 125 C 2.0 1.5 1.0 1.0 0.5 0.5 0.0 0.0 4.0 4.5 5.0 5.5 6.0 6.5 0.0 7.0 0.5 1.0 1.5 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 2.5 3.0 3.5 4.0 Fig. 10. Gate Charge 10 7 VDS = 250V 9 I D = 1.2A 8 6 I G = 10mA 7 V GS - Volts 5 I S - Amperes 2.0 I D - Amperes 4 3 6 5 4 o TJ = 125 C 3 o 2 TJ = 25 C 2 1 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 VSD - Volts 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 QG - NanoCoulombs Fig. 11. Capacitance 1,000 2.0 Fig. 12. Forward-Bias Safe Operating Area 10 RDS(on) Limit Ciss 25μs 100 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 100μs 1 1ms 10 o TJ = 150 C DC 10ms o TC = 25 C Single Pulse Crss 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXTY2R4N50P IXTP2R4N50P Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_2R4N50P(1J) 6-19-17-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.