IXTP32N20T

IXTA32N20T IXTP32N20T TrenchTM Power MOSFET VDSS ID25 = 200V = 32A Ω ≤ 78mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 32 A IDM TC = 25°C, Pulse Width Limited by TJM 64 A IA TC = 25°C 16 A EAS TC = 25°C 250 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns PD TC = 25°C 200 W TO-220AB (IXTP) G G = Gate S = Source - 55 ... +175 °C z 175 °C z Tstg - 55 ... +175 °C z 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 z z International Standard Packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Fast Intrinsic Rectifier High Current Handling Capability Easy to Mount Space Savings High Power Density V 5.0 V Applications ±100 nA z 3 μA z 200 μA 78 mΩ z z z z z © 2010 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D (Tab) Features TJM TJ DS DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS99959B(10/10) IXTA32N20T IXTP32N20T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 10V, ID = 0.5 • ID25, Note 1 TO-263 Outline 30 S 1760 pF 212 pF 31 pF 14 ns 18 ns 55 ns tf 31 ns Qg(on) 38 nC 12 nC 13 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.75 °C/W RthJC RthCH TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A VSD IF = IS, VGS = 0V, Note 1 1.2 V trr IF = 0.5 • ID25, VGS = 0V IRM QRM -di/dt = 100A/μs VR = 0.5 • VDSS 110 ns 6.90 A 0.38 nC TO-220 Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA32N20T IXTP32N20T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 90 32 VGS = 10V 8V 7V 28 70 24 6V 60 20 ID - Amperes ID - Amperes VGS = 10V 8V 80 16 12 7V 50 40 30 6V 8 20 5V 4 10 0 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 5 10 32 25 30 3.6 VGS = 10V 8V 7V 28 VGS = 10V 3.2 24 2.8 20 R DS(on) - Normalized ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 6V 16 12 5V 8 I D = 32A 2.4 2.0 I D = 16A 1.6 1.2 4 0.8 0 0.4 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 36 5.0 VGS = 10V 4.5 32 TJ = 175ºC 4.0 28 24 3.5 ID - Amperes R DS(on) - Normalized 15 VDS - Volts VDS - Volts 3.0 2.5 20 16 12 2.0 8 TJ = 25ºC 1.5 4 1.0 0 0.5 0 5 10 15 20 25 30 35 40 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 45 50 55 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXTA32N20T IXTP32N20T Fig. 7. Input Admittance Fig. 8. Transconductance 45 70 35 g f s - Siemens 50 ID - Amperes TJ = - 40ºC 40 TJ = - 40ºC 25ºC 150ºC 60 40 30 25ºC 30 25 20 150ºC 15 20 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 5 10 15 20 25 VGS - Volts 90 9 80 8 70 7 60 6 50 40 TJ = 150ºC 40 45 50 55 60 65 VDS = 100V I D = 16A I G = 10mA 5 4 3 TJ = 25ºC 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 RDS(on) Limits f = 1 MHz TJ = 175ºC TC = 25ºC Single Pulse 25µs Ciss 1,000 ID - Amperes Capacitance - PicoFarads 35 Fig. 10. Gate Charge 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 30 30 ID - Amperes 100µs 10 Coss 100 1ms 10ms Crss 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXTA32N20T IXTP32N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 20 20 RG = 10Ω 18 18 VGS = 15V TJ = 25ºC 16A < I 16 D < 32A t r - Nanoseconds t r - Nanoseconds VDS = 100V 14 12 RG = 10Ω 16 VGS = 15V VDS = 100V 14 12 TJ = 125ºC 10 10 8 8 25 35 45 55 65 75 85 95 105 115 16 125 18 20 22 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 35 I D = 32A 36 21 34 tf 32 RG = 10Ω, VGS = 15V 20 30 19 25 18 I D = 16A 20 32 17 64 62 td(off) - - - - 60 VDS = 100V 30 58 28 56 26 54 I D = 16A 24 52 15 16 10 15 20 48 5 14 18 46 0 13 16 10 14 18 22 26 30 34 38 42 46 22 25 50 35 45 55 58 td(off) - - - 56 RG = 10Ω, VGS = 15V 54 TJ = 25ºC 26 52 22 50 TJ = 125ºC 18 48 14 46 22 95 105 115 44 125 24 26 28 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 30 32 210 90 tf 80 TJ = 125ºC, VGS = 15V 190 td(off) - - - - 170 I D = 16A VDS = 100V 70 150 60 I D 130 = 32A 50 110 40 90 30 70 20 50 10 30 0 10 10 14 18 22 26 30 RG - Ohms 34 38 42 46 50 t d(off) - Nanoseconds 30 t d(off) - Nanoseconds VDS = 100V 20 85 100 t f - Nanoseconds tf 18 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 38 16 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 34 50 I D = 32A RG - Ohms t f - Nanoseconds 30 t d(off) - Nanoseconds VDS = 100V t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 15V 28 22 t f - Nanoseconds tr 26 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 45 40 24 ID - Amperes IXTA32N20T IXTP32N20T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXT_32N20T (3G)4-14-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.