IXTP32N65X

Preliminary Technical Information IXTP32N65X IXTQ32N65X IXTH32N65X X-Class Power MOSFET VDSS ID25 = 650V = 32A  135m  RDS(on) N-Channel Enhancement Mode TO-220AB (IXTP) GD Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 32 A IDM TC = 25C, Pulse Width Limited by TJM 64 A dv/dt IS  ID25, VDD  VDSS, TJ  150°C 30 V/ns PD TC = 25C 500 W TO-3P (IXTQ) -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 3.0 5.5 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-3P TO-247 G D TO-247 (IXTH) G BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)  V  V 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 Low RDS(ON) and QG Low Package Inductance Fast Intrinsic Rectifier High Power Density Easy to Mount Space Savings Applications 5 A 50 A  135 m     © 2015 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages  TJ = 125C Tab S Features  Characteristic Values Min. Typ. Max. D G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) S Tab  5.5 Tab S Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100585D(6/15) IXTP32N65X IXTQ32N65X IXTH32N65X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 13 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 22 S 2.6  2205 pF 1600 pF 30 pF 111 349 pF pF 23 ns 49 ns 58 ns 28 ns 54 nC 12 nC 29 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.25 C/W RthJC RthCS TO-220 TO-247 & TO-3P C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 32 A Repetitive, pulse Width Limited by TJM 128 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 16A, -di/dt = 100A/μs 400 6.1 31 VR = 100V ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP32N65X IXTQ32N65X IXTH32N65X Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 32 70 VGS = 10V VGS = 10V 28 60 9V 8V 50 20 16 I D - Amperes I D - Amperes 24 7V 12 8V 40 30 7V 20 8 4 10 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 5 10 15 VDS - Volts 32 3.8 VGS = 10V 8V 30 VGS = 10V 3.4 3.0 RDS(on) - Normalized 24 7V I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 28 20 VDS - Volts 20 16 12 6V 8 2.6 I D = 32A 2.2 1.8 I D = 16A 1.4 1.0 4 0.6 5V 0.2 0 0 1 2 3 4 5 6 7 8 9 10 11 -50 12 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 4.0 VGS = 10V 1.2 3.5 BVDSS / VGS(th) - Normalized RDS(on) - Normalized TJ = 125ºC 3.0 2.5 TJ = 25ºC 2.0 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 10 20 30 40 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 50 60 70 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 IXTP32N65X IXTQ32N65X IXTH32N65X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 45 35 40 30 35 25 I D - Amperes I D - Amperes 30 20 15 25 20 TJ = 125ºC 25ºC - 40ºC 15 10 10 5 5 0 0 -50 -25 0 25 50 75 100 125 4.0 150 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 40 100 TJ = - 40ºC 90 35 80 70 25ºC 25 I S - Amperes g f s - Siemens 30 125ºC 20 15 60 50 40 TJ = 125ºC 30 10 TJ = 25ºC 20 5 10 0 0 0 5 10 15 20 25 30 35 40 45 50 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10,000 10 VDS = 325V VGS - Volts 8 Capacitance - PicoFarads I D = 16A I G = 10mA 6 4 Ciss 1,000 100 Coss 10 2 Crss f = 1 MHz 0 1 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTP32N65X IXTQ32N65X IXTH32N65X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 22 100 RDS(on) Limit 20 25µs 18 100µs 10 14 I D - Amperes E OSS - MicroJoules 16 12 10 8 1ms 1 6 TJ = 150ºC 4 TC = 25ºC Single Pulse 2 10ms 0.1 0 0 100 200 300 400 500 600 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_32N65X(J7) 6-17-15-A IXTP32N65X IXTQ32N65X IXTH32N65X TO-220 Outline E TO-3P Outline TO-247 Outline A oP A1 A A2 E H1 Q 0P 0P1 D A A2 A2 Q + + D1 D D1 1 2 A2 EJECTOR D2 0P1 1 3 L1 S + D1 D 4 E1 + R A + 0K M D B M 0P O B E S + D2 D PIN E1 2 3 4 ixys option L1 A1 C E1 L L1 L e c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source b b2 3X b c b4 e A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. PINS: 1 - Gate 2, 4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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