IXTP32N65XM

IXTP32N65XM X-Class Power MOSFET VDSS ID25 RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode = 650V = 32A  135m  OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 32 A IDM TC = 25C, Pulse Width Limited by TJM 64 A dv/dt IS 30 V/ns PD TC = 25C 78 W  ID25, VDD  VDSS, TJ  150°C G G = Gate S = Source -55 ... +150 C  150 C  Tstg -55 ... +150 C  300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 16A, Note 1  V 100 nA     TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications V 5.5 D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features TJM TJ DS 5 A 50 A Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 135 m DS100589F(11/18) IXTP32N65XM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 16A, Note 1 13 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 22 S 2.6  2205 pF 1600 pF 30 pF 111 349 pF pF 23 ns 49 ns 58 ns 28 ns 54 nC 12 nC 29 nC Crss OVERMOLDED TO-220 (IXTP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 16A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 16A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 1.6 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 32 A Repetitive, pulse Width Limited by TJM 128 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 16A, -di/dt = 100A/μs 400 6.1 31 VR = 100V ns C A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP32N65XM o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 32 70 60 24 8V 16 9V 50 20 I D - Amperes I D - Amperes VGS = 10V VGS = 10V 28 7V 12 8V 40 30 7V 20 8 4 10 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 VDS - Volts 32 3.8 VGS = 10V 8V 30 VGS = 10V 3.4 3.0 RDS(on) - Normalized 24 7V I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 28 20 VDS - Volts 20 16 12 6V 8 2.6 I D = 32A 2.2 1.8 I D = 16A 1.4 1.0 4 0.6 5V 0.2 0 0 4.0 1 2 3 4 5 6 7 8 9 10 11 -50 12 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 3.5 RDS(on) - Normalized o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 10 20 30 40 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 50 60 70 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 IXTP32N65XM Fig. 7. Input Admittance Fig.8. Transconductance 45 40 o 40 35 30 g f s - Siemens 30 I D - Amperes TJ = - 40 C 35 25 20 o TJ = 125 C o 25 C 15 o 25 C 25 o 125 C 20 15 o - 40 C 10 10 5 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 100 VDS = 325V 90 I D = 16A 8 80 I G = 10mA 60 VGS - Volts I S - Amperes 70 50 40 o TJ = 125 C 6 4 30 o TJ = 25 C 20 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 VSD - Volts 20 25 30 35 40 45 50 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy 10,000 22 18 Ciss 1,000 EOSS - MicroJoules Capacitance - PicoFarads 20 100 C oss 16 14 12 10 8 6 10 4 C rss f = 1 MHz 2 1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 55 IXTP32N65XM Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance 100 10 RDS(on) Limit 25μs 1 100μs 1ms 1 Z (th)JC - K / W I D - Amperes 10 0.1 0.01 o TJ = 150 C o TC = 25 C Single Pulse 10ms 0.1 10 100 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: T_32N65X(J7) 6-15-18 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.