IXTP32P05T

IXTY32P05T IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS(on) = =  - 50V - 32A  39m P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 50 V VDGR TJ = 25C to 150C, RGS = 1M - 50 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 32 A IDM TC = 25C, Pulse Width Limited by TJM -110 A IA EAS TC = 25C TC = 25C - 32 200 A mJ PD TC = 25C 83 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 0.35 2.50 3.00 g g g G S D (Tab) TO-220 (IXTP) GD S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages Avalanche Rated  Extended FBSOA  Fast Intrinsic Diode  Low RDS(ON) and QG  Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 50 VGS(th) VDS = VGS, ID = - 250A - 2.5 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = -10V, ID = 0.5 • ID25, Note 1   V  - 4.5 V Applications 50 nA - 3 A -100 A 39 m       © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS99967D(8/17) IXTY32P05T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 11 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = - 30V, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 17 S 1975 pF 315 pF 160 pF 20 ns 28 ns 39 ns 27 ns 46 nC 19 nC 11 nC 1.5 C/W RthJC RthCS IXTA32P05T IXTP32P05T TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 32 A ISM Repetitive, Pulse Width Limited by TJM -128 A VSD IF = IS, VGS = 0V, Note 1 -1.5 V trr QRM IRM IF = 0.5 • ID25, -di/dt = -100A/s VR = - 25V, VGS = 0V Note 1: Pulse test, t  300s, duty cycle, d  2%. 26 21 -1.6  ns nC A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY32P05T o Fig. 1. Output Characteristics @ TJ = 25 C IXTA32P05T IXTP32P05T o Fig. 2. Extended Output Characteristics @ TJ = 25 C -32 -100 VGS = -10V - 9V -28 VGS = -10V -90 -80 - 8V -24 - 9V I D - Amperes I D - Amperes -70 -20 - 7V -16 -12 - 6V -60 - 8V -50 -40 - 7V -30 -8 - 5V -4 -20 - 6V -10 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 -1 -2 -3 -4 1.8 -32 VGS = -10V - 9V -7 -8 -9 -10 VGS = -10V 1.6 -20 RDS(on) - Normalized - 8V -24 I D - Amperes -6 Fig. 4. RDS(on) Normalized to ID = -16A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C -28 -5 VDS - Volts VDS - Volts - 7V -16 - 6V -12 I D = - 32A 1.4 I D = -16A 1.2 1.0 -8 -4 0.8 - 5V 0 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = -16A Value vs. Drain Current 1.6 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -35 VGS = -10V 1.5 o TJ = 125 C -30 1.4 -25 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.3 1.2 1.1 -20 -15 -10 o TJ = 25 C 1.0 -5 0.9 0 0 -5 -10 -15 -20 -25 -30 -35 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -40 -45 -50 -55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY32P05T IXTA32P05T IXTP32P05T Fig. 8. Transconductance Fig. 7. Input Admittance -35 24 -30 20 o TJ = - 40 C o 25 C 16 g f s - Siemens I D - Amperes -25 -20 o TJ = 125 C -15 o 25 C o - 40 C -10 o 125 C 12 8 4 -5 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -4 -8 -12 VGS - Volts -90 -9 VDS = - 25V -80 -8 I D = -16A -70 -7 -60 -6 -50 o TJ = 125 C -30 -20 -24 -28 -32 -36 45 50 Fig. 10. Gate Charge -10 VGS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode -100 -40 -16 I D - Amperes I G = -1mA -5 -4 -3 o TJ = 25 C -20 -2 -10 -1 0 0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0 -1.6 5 10 VSD - Volts 20 25 30 35 40 QG - NanoCoulombs Fig. 11. Capacitance 10,000 15 -1,000 Fig. 12. Forward-Bias Safe Operating Area Ciss - 100 I D - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss RDS(on) Limit 25μs 100μs -10 1ms o TJ = 150 C 10ms o TC = 25 C Single Pulse Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -1 -1 100ms - 10 VDS - Volts - 100 IXTY32P05T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 30 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 29 RG = 10Ω , VGS = -10V 29 28 VDS = - 30V o TJ = 25 C t r - Nanoseconds t r - Nanoseconds 28 27 26 I D = -16A 25 24 RG = 10Ω , VGS = -10V 27 VDS = - 30V 26 25 I D = - 32A o 24 23 22 TJ = 125 C 23 25 35 45 55 65 75 85 95 105 115 -16 125 -18 -20 -22 TJ - Degrees Centigrade tr 80 td(on) 36 28.0 34 27.5 tf 28 I D = -16A, - 32A 26 30 24 t f - Nanoseconds t r - Nanoseconds 50 25.5 32 25.0 24.0 18 23.5 18 20 22 24 26 28 30 32 28 I D = -16A, - 32A 24.5 25 34 35 45 tf td(off) 50 80 45 70 40 60 25.5 30 o 25 o TJ = 25 C, 125 C 24.5 24.0 -16 -18 -20 -22 -24 75 85 95 105 115 16 125 tf -26 -28 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved -30 -32 80 td(off) 70 o TJ = 125 C, VGS = -10V VDS = - 30V 60 50 50 40 40 I D = - 32A 30 20 20 15 10 30 I D = -16A 20 10 10 12 14 16 18 20 22 24 RG - Ohms 26 28 30 32 34 t d(off) - Nanoseconds 35 t d(off) - Nanoseconds 26.0 t f - Nanoseconds VDS = - 30V 25.0 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 10Ω, VGS = -10V 26.5 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 27.0 24 20 RG - Ohms 27.5 44 I D = -16A VDS = - 30V 36 20 16 48 26.0 10 0 52 40 22 14 -32 26.5 20 12 -30 t d(off) - Nanoseconds 30 t d(on) - Nanoseconds 60 10 -28 td(off) RG = 10Ω, VGS = -10V 27.0 32 VDS = - 30V 40 -26 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature o TJ = 125 C, VGS = -10V 70 -24 I D - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 t f - Nanoseconds IXTA32P05T IXTP32P05T IXTY32P05T IXTA32P05T IXTP32P05T Fig. 19. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source 2 L2 3 b2 A1 6.40 A1 H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 4 BOTTOM VIEW 4 H 0.34 [8.7] 6.50MIN A oP D1 D H E L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_32P05T(A1-805) 11-05-10-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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