IXTP340N04T4

Preliminary Technical Information IXTP340N04T4 IXTH340N04T4 TrenchT4TM Power MOSFET VDSS ID25 = 40V = 340A   1.9m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-220AB (IXTP) Symbol Test Conditions VDSS TJ = 25C to 175C Maximum Ratings 40 V VDGR TJ = 25C to 175C, RGS = 1M 40 V VGSM Transient  15 V ID25 ILRMS TC = 25C Lead Current Limit, RMS 340 160 A A IDM TC = 25C, Pulse Width Limited by TJM 700 A IA TC = 25C 170 A EAS TC = 25C 1.2 J IA TC = 25C 340 A EAS TC = 25C 500 mJ PD TC = 25C 480 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight TO-220 TO-247 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) 300 260 °C °C 1.13 / 10 m/lb.in 3 6 g g VGS = 0V, ID = 250A 40 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS = 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 5 A VGS = 10V, ID = 100A, Notes 1, 2 © 2016 IXYS CORPORATION, All Rights Reserved G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features         V             200 nA TJ = 150C D (Tab) TO-247 (IXTH)  V 4.0 DS International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Characteristic Values Min. Typ. Max. BVDSS G 750 A 1.9 m Easy to Mount Space Savings High Power Density Applications    DC-DC Converters & Off-Line UPS Primary-Side Switch High Current Switching Applications DS100699B(03/16) IXTP340N04T4 IXTH340N04T4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 110 180 S 13 nF 1850 pF 1226 pF 1.1  23 ns 55 ns 113 ns 40 ns 256 nC 64 nC 86 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 150A, VGS = 0V, 43 ns IRM -di/dt = 100A/s, VR = 30V 10 A 210 nC QRM 340 A 1360 A 1.4 V Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP340N04T4 IXTH340N04T4 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 350 350 VGS = 10V VGS = 15V 10V 300 8V 250 7V I D - Amperes I D - Amperes 250 200 6.5V 150 7V 300 6.5V 200 150 6V 100 100 6V 50 50 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 2 3 4 5 6 7 8 9 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Normalized RDS(on) to ID = 170A Value vs. Junction Temperature 300 1.8 VGS = 15V 10V 9V 8V 10 VGS = 10V 1.6 7V ID = 340A RDS(on) - Normalized 250 I D - Amperes 1 VDS - Volts 200 150 6V 100 5V 50 1.4 ID = 170A 1.2 1.0 0.8 4V 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) to ID = 170A vs. Drain Current 2.0 25 Fig. 6. Drain Current vs. Case Temperature 180 160 1.8 External Lead Current Limit 1.6 120 TJ = 175ºC I D - Amperes RDS(on) - Normalized 140 VGS = 10V 15V 1.4 1.2 TJ = 25ºC 100 80 60 40 1.0 20 0.8 0 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTP340N04T4 IXTH340N04T4 Fig. 7. Input Admittance Fig. 8. Transconductance 140 360 VDS = 10V 120 320 TJ = - 40ºC VDS = 10V 280 g f s - Siemens I D - Amperes 100 80 TJ = 150ºC 60 25ºC - 40ºC 25ºC 240 200 150ºC 160 120 40 80 20 40 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 Fig. 10. Gate Charge 10 300 VDS = 20V 9 250 I D = 170A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes VGS - Volts 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 30 60 Fig. 11. Capacitance 120 150 180 210 240 270 Fig. 12. Forward-Bias Safe Operating Area 1,000 100000 RDS(on) Limit f = 1 MHz 100µs Ciss 10000 100 I D - Amperes Capacitance - PicoFarads 90 QG - NanoCoulombs VSD - Volts Coss 1000 External Lead Current Limit 10 1ms Crss TJ = 175ºC TC = 25ºC Single Pulse 100 DC 10ms 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTP340N04T4 IXTH340N04T4 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 64 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 66 RG = 3Ω , VGS = 10V RG = 3Ω , VGS = 10V 64 VDS = 20V I D = 170A 60 VDS = 20V 62 t r - Nanoseconds t r - Nanoseconds 62 58 I D = 340A 56 TJ = 150ºC 60 58 54 56 52 54 50 TJ = 25ºC 52 25 50 75 100 125 150 160 180 200 220 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 260 280 300 320 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 50 td(on) tf 48 TJ = 150ºC, V GS = 10V 400 60 I D = 340A I D = 170A 200 40 130 I D = 170A 120 44 110 42 100 I D = 340A 40 90 t d(off) - Nanoseconds 300 td(off) VDS = 20V 46 100 20 38 0 6 8 10 12 14 16 50 75 100 70 150 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf 50 td(off) RG = 3Ω, VGS = 10V 125 350 120 300 115 110 TJ = 150ºC 44 105 42 100 40 95 TJ = 25ºC 38 90 36 180 200 220 240 260 280 300 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 320 85 340 t d(off) - Nanoseconds 46 tf 700 td(off) 600 TJ = 150ºC, VGS = 10V VDS = 20V 250 500 I D = 170A 200 400 150 300 I D = 340A 100 200 50 100 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 t d(off) - Nanoseconds VDS = 20V 48 160 25 18 t f - Nanoseconds 52 4 80 36 0 2 t f - Nanoseconds 340 140 RG = 3Ω, VGS = 10V 80 VDS = 20V t d(on) - Nanoseconds t r - Nanoseconds 100 t f - Nanoseconds 500 240 I D - Amperes IXTP340N04T4 IXTH340N04T4 Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-220 (IXTH) Outline TO-220 (IXTP) Outline A E E A A1 0P A2 E2/2 Q R 0P U H1 Q S E2 D T (D2) D 4 D1 1 2 1 4 3 3 L1 A2 EJECTOR PIN 2 (E1) L L1 L b2 e c e1 3X b 3X b2 1 = Gate 2,4 = Drain 3 = Source b4 b e c A1 W 1 = Gate 2,4 = Drain 3 = Source BOTTOM FLATNESS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_340N04T4(T6-M04) 1-27-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.