IXTP3N100D2

Depletion Mode MOSFET IXTA3N100D2 IXTP3N100D2 VDSX ID(on) RDS(on) D = >  1000V 3A 6  N-Channel G TO-263 AA (IXTA) S Symbol Test Conditions VDSX TJ = 25C to 150C VGSX G Maximum Ratings S 1000 V Continuous 20 V VGSM Transient 30 V PD TC = 25C 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 1000 VGS(off) VDS = 25V, ID = 250A IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 1.5A, Note 1 ID(on) VGS = 0V, VDS = 50V, Note 1 - 2.5 V - 4.5 V 100 nA 5 A 50 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 6 3 • Easy to Mount • Space Savings • High Power Density  A Applications • • • • • • Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100184E(4/17) IXTA3N100D2 IXTP3N100D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.2 VDS = 30V, ID = 1.5A, Note 1 Ciss Coss 2.0 S 1020 pF 68 pF 17 pF VGS = -10V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs 27 ns 67 ns 34 ns 40 ns 37.5 nC 4.4 nC Dim. Millimeter Min. Max. Inches Min. Max. 21.2 nC A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Resistive Switching Times VGS =  5V, VDS = 500V, ID = 1.5A RG = 3.3 (External) Qg(on) VGS = 5V, VDS = 500V, ID = 1.5A Qgd 1.0 C/W RthJC RthCS TO-263 Outline TO-220 0.50 C/W Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 800V, ID = 94mA, TC = 75C, Tp = 5s 75 W 1. 2. 3. 4. Gate Drain Source Drain Bottom Side TO-220 Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 3A, VGS = -10V, Note 1 trr IRM QRM IF = 3A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 970 12.7 6.16 1.3 V ns A μC Pins: Note 1. Pulse test, t  300s, duty cycle, d  2%. 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA3N100D2 IXTP3N100D2 o o 2.5 VGS = 5V 2V 1V 2.0 0V 7 VGS = 5V 2V 1V 6 5 1.5 I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 3.0 -1V 0V 4 3 -1V 1.0 2 - 2V 0.5 1 - 2V - 3V 0.0 0 0 2 4 6 8 10 12 14 0 10 20 VDS - Volts o 40 Fig. 4. Drain Current @ TJ = 25 C 3.0 1.E+00 VGS = - 3.00V VGS = 5V 1V 0V 2.5 1.E-01 - 3.25V - 3.50V 1.E-02 I D - Amperes 2.0 -1V 1.5 1.0 - 2V - 3.75V 1.E-03 - 4.00V 1.E-04 - 4.25V 1.E-05 0.5 1.E-06 - 4.50V - 3V 0.0 1.E-07 0 5 10 15 20 25 30 0 100 200 300 400 VDS - Volts 500 600 700 800 900 1000 1100 1200 VDS - Volts o Fig. 6. Dynamic Resistance vs. Gate Voltage Fig. 5. Drain Current @ TJ = 100 C 1.E+10 1.E+00 ∆ VDS = 700V - 100V VGS = - 3.25V 1.E+09 1.E-01 - 3.50V 1.E-02 - 3.75V - 4.00V 1.E-03 1.E+08 RO - Ohms I D - Amperes 50 o Fig. 3. Output Characteristics @ TJ = 125 C I D - Amperes 30 VDS - Volts 1.E+07 o TJ = 25 C 1.E+06 - 4.25V 1.E-04 o TJ = 100 C 1.E+05 - 4.50V 1.E-05 1.E+04 0 100 200 300 400 500 600 700 800 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 900 1000 1100 1200 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 VGS - Volts -3.4 -3.2 -3.0 -2.8 IXTA3N100D2 IXTP3N100D2 Fig. 8. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.6 2.4 VGS = 0V 2.4 VGS = 0V 5V 2.2 2.0 RDS(on) - Normalized RDS(on) - Normalized I D = 1.5A 1.6 1.2 2.0 o TJ = 125 C 1.8 1.6 1.4 1.2 o TJ = 25 C 1.0 0.8 0.8 0.4 0.6 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 TJ - Degrees Centigrade Fig. 9. Input Admittance 3.0 3.5 4.0 4.5 5.0 4.0 VDS = 30V 4.0 VDS = 30V 3.5 3.5 o TJ = - 40 C 3.0 2.5 g f s - Siemens 3.0 I D - Amperes 2.5 Fig. 10. Transconductance 4.5 o TJ = 125 C o 25 C o - 40 C 2.0 1.5 o 2.5 25 C 2.0 125 C o 1.5 1.0 1.0 0.5 0.5 0.0 0.0 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.0 0.5 1.0 1.5 VGS - Volts 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 I D - Amperes Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 12. Forward Voltage Drop of Intrinsic Diode 10 1.3 VGS = -10V 9 8 1.2 VGS(off) @ VDS = 25V 7 I S - Amperes BV / VGS(off) - Normalized 2.0 I D - Amperes 1.1 BVDSX @ VGS = - 5V 1.0 6 5 4 o TJ = 125 C o TJ = 25 C 3 0.9 2 1 0.8 0 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.3 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 1.0 IXTA3N100D2 IXTP3N100D2 Fig. 13. Capacitance Fig. 14. Gate Charge 10,000 5 VDS = 500V 4 I D = 1.5A 3 Ciss Coss 100 I G = 10mA 2 1,000 VGS - Volts Capacitance - PicoFarads f = 1 MHz 1 0 -1 -2 -3 Crss -4 -5 10 0 5 10 15 20 25 30 35 0 40 5 10 VDS - Volts 20 25 30 35 40 QG - NanoCoulombs Fig. 16. Forward-Bias Safe Operating Area Fig. 15. Forward-Bias Safe Operating Area o o @ TC = 25 C 10.00 15 @ TC = 75 C 10 RDS(on) Limit RDS(on) Limit 25μs 25μs 100μs 1.00 100μs 1 I D - Amperes I D - Amperes 1ms 10ms 100ms DC 0.10 1ms 10ms 0.1 100ms DC o TJ = 150 C o TJ = 150 C o TC = 75 C Single Pulse o TC = 25 C Single Pulse 0.01 10.0010 0.01 Fig. 17. Maximum Transient 10 Thermal Impedance 1,000 100 VDS - Volts 100 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance . 2.00 Z (th)JC - K / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N100D2(3C) 7-15-14-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.