IXTP3N50D2

IXTA3N50D2 IXTP3N50D2 Depletion Mode MOSFET VDSX ID(on) RDS(on) = >  500V 3A 1.5  D N-Channel G TO-263 AA (IXTA) S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25C 125 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 1.13 / 10 Nm/lb.in 2.5 3.0 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSX VGS = - 5V, ID = 250A 500 VGS(off) VDS = 25V, ID = 250A - 2.0 IGSX VGS = 20V, VDS = 0V IDSX(off) VDS = VDSX, VGS = - 5V RDS(on) VGS = 0V, ID = 1.5A, Note 1 ID(on) VGS = 0V, VDS = 25V, Note 1 V - 4.5 V 100 nA 5 A 50 A TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 1.5 3 • Easy to Mount • Space Savings • High Power Density  A Applications • • • • • • Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads DS100148D(4/17) IXTA3N50D2 IXTP3N50D2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 30V, ID = 1.5A, Note 1 1.3 Ciss Coss VGS = -10V, VDS = 25V, f = 1MHz 2.1 S 1070 pF 102 pF 24 pF Crss td(on) tr td(off) tf Qgs 27 ns 71 ns 56 ns 42 ns 40 nC 5 nC Dim. Millimeter Min. Max. Inches Min. Max. 20 nC A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Resistive Switching Times VGS =  5V, VDS = 250V, ID = 1.5A RG = 3.3 (External) Qg(on) VGS = 5V, VDS = 250V, ID = 1.5A Qgd 1.00 C/W RthJC RthCS TO-263 (IXTA) Outline TO-220 0.50 C/W Safe-Operating-Area Specification Characteristic Values Min. Typ. Max. Symbol Test Conditions SOA VDS = 400V, ID = 0.19A, TC = 75C, Tp = 5s 75 W 1. 2. 3. 4. Gate Drain Source Drain Bottom Side TO-220 (IXTP) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD IF = 3A, VGS = -10V, Note 1 trr IRM QRM IF = 3A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 340 10.9 1.86 1.3 V ns A μC Pins: 1 - Gate 3 - Source 2 - Drain Note 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA3N50D2 IXTP3N50D2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 3.0 16 VGS = 5V 3V 2V 1V 12 2V 2.0 I D - Amperes I D - Amperes 2.5 VGS = 5V 3V 14 0V 1.5 1.0 -1V 10 1V 8 6 0V 4 0.5 - 2V - 3V 0.0 0.0 0.5 1.0 1.5 2.0 -1V 2 - 2V 0 2.5 3.0 3.5 0 5 10 VDS - Volts 20 25 o Fig. 3. Output Characteristics @ TJ = 125 C o Fig. 4. Drain Current @ TJ = 25 C 1.E+00 VGS = 5V 2V 1V VGS = - 2.50V 1.E-01 - 2.75V - 3.00V 0V I D - Amperes 2.0 I D - Amperes 30 VDS - Volts 3.0 2.5 15 -1V 1.5 1.0 1.E-02 - 3.25V - 3.50V 1.E-03 - 3.75V 1.E-04 - 2V 0.5 - 4.00V 1.E-05 - 3V 0.0 1.E-06 0 1 2 3 4 5 6 7 0 100 200 VDS - Volts 300 400 500 600 VDS - Volts o Fig. 5. Drain Current @ TJ = 100 C Fig. 6. Dynamic Resistance vs. Gate Voltage 1.E+08 1.E+00 ∆ VDS = 350V - 100V VGS = - 2.75V 1.E+07 - 3.00V - 3.25V 1.E-02 RO - Ohms I D - Amperes 1.E-01 - 3.50V 1.E+06 o TJ = 25 C 1.E+05 o TJ = 100 C - 3.75V 1.E-03 1.E+04 - 4.00V 1.E-04 1.E+03 0 100 200 300 400 VDS - Volts © 2017 IXYS CORPORATION, All Rights Reserved 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 VGS - Volts -3.0 -2.8 -2.6 -2.4 IXTA3N50D2 IXTP3N50D2 Fig. 8. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current Fig. 7. Normalized RDS(on) vs. Junction Temperature 2.4 3.0 VGS = 0V I D = 1.5A VGS = 0V 5V 2.6 RDS(on) - Normalized RDS(on) - Normalized 2.0 1.6 1.2 0.8 o TJ = 125 C 2.2 1.8 1.4 o TJ = 25 C 1.0 0.4 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 TJ - Degrees Centigrade 4 5 6 7 8 9 10 I D - Amperes Fig. 9. Input Admittance Fig. 10. Transconductance 10 6 o VDS = 30V 9 TJ = - 40 C VDS = 30V 5 8 o 25 C g f s - Siemens I D - Amperes 7 6 5 4 o TJ = 125 C o 25 C o - 40 C 3 2 o 4 125 C 3 2 1 1 0 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 0 1 2 VGS - Volts 5 6 7 8 9 10 Fig. 12. Forward Voltage Drop of Intrinsic Diode 10 9 1.3 VGS = -10V 8 7 1.2 VGS(off) @ VDS = 25V I S - Amperes BV / VGS(off) - Normalized 4 I D - Amperes Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature 1.4 3 1.1 BVDSX @ VGS = - 5V 1.0 6 5 4 o TJ = 125 C 3 o TJ = 25 C 2 0.9 1 0 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.4 0.5 0.6 VSD - Volts 0.7 0.8 0.9 IXTA3N50D2 IXTP3N50D2 Fig. 13. Capacitance Fig. 14. Gate Charge 5 10,000 f = 1 MHz VDS = 250V 4 I D = 1.5A Ciss I G = 10mA 2 1,000 1 VGS - Volts Capacitance - PicoFarads 3 Coss 0 -1 100 -2 -3 -4 Crss -5 10 0 5 10 15 20 25 30 35 0 40 5 10 VDS - Volts 25 30 35 40 Fig. 16. Forward-Bias Safe Operating Area o o @ TC = 25 C @ TC = 75 C 100 RDS(on) Limit RDS(on) Limit 10 10 25μs I D - Amperes I D - Amperes 20 QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating Area 100 15 100μs 1ms 1 25μs 100μs 1 1ms 10ms o TJ = 150 C o TJ = 150 C 100ms o TC = 25 C Single Pulse Fig. 17. 0.1 10.00 10 100 10ms o TC = 75 C Single Pulse DC 0.1Thermal Maximum Transient 1,000 10 100ms DC Impedance 100 VDS - Volts 1,000 VDS - Volts Fig. 17. Maximum Transient Thermal Impedance 2.00 Z (th)JC - k / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N50D2(3C)8-17-09-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.