IXTP42N15T

IXTA42N15T IXTP42N15T TrenchHVTM Power MOSFET VDSS ID25 = 150V = 42A Ω ≤ 45mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSM Transient ± 30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IA G 42 A 100 A TC = 25°C 5 A EAS TC = 25°C 400 mJ PD TC = 25°C 200 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL TSOLD 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 S (TAB) TO-220 G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages 175°C Operating Temperature z Avalanche rated z Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V TJ = 150°C VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 38 4.5 V ±100 nA z z z Applications z 5 μA z 150 μA z 45 mΩ z z z z © 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications DS99799A(11/08) IXTA42N15T IXTP42N15T Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 20 TO-263 (IXTA) Outline 33 S 1880 pF 255 pF 37 pF 14 ns 16 ns 50 ns tf 25 ns Qg(on) 21 nC 6.0 nC 6.6 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 15V, VDS =0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.75 °C/W RthJC RthCH TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 42 A Repetitive, Pulse width limited by TJM 126 A VSD IF = 21A, VGS = 0V, Note 1 1.1 V trr IF = 25A, VGS = 0V, -di/dt = 100A/μs, VR = 50V 100 TO-220 (IXTP) Outline ns Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA42N15T IXTP42N15T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 120 VGS = 10V 9V 8V 40 VGS = 10V 9V 100 30 ID - Amperes ID - Amperes 35 7V 25 20 6V 8V 80 60 7V 40 15 6V 10 20 5 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 2 4 6 8 10 45 16 18 20 22 24 26 28 3.4 VGS = 10V 8V 7V 35 VGS = 10V 3.0 RDS(on) - Normalized 40 ID - Amperes 14 Fig. 4. RDS(on) Normalized to ID = 21A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 30 25 6V 20 15 2.6 I D = 42A 2.2 I D = 21A 1.8 1.4 1.0 10 5V 5 0.6 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 21A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 45 6.0 VGS = 10V 5.5 40 TJ = 175ºC 15V - - - - 5.0 35 4.5 ID - Amperes RDS(on) - Normalized 12 VDS - Volts VDS - Volts 4.0 3.5 3.0 2.5 30 25 20 15 2.0 10 1.5 TJ = 25ºC 1.0 5 0.5 0 0 10 20 30 40 50 60 70 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 80 90 100 110 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA42N15T IXTP42N15T Fig. 7. Input Admittance Fig. 8. Transconductance 50 70 45 60 TJ = - 40ºC 40 40 30 TJ = 150ºC 25ºC - 40ºC 20 35 g f s - Siemens ID - Amperes 50 25ºC 30 25 150ºC 20 15 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 50 60 70 Fig. 10. Gate Charge 10 120 VDS = 75V 9 100 I D = 25A 8 I G = 10mA 7 80 VGS - Volts IS - Amperes 30 ID - Amperes 60 40 TJ = 150ºC 6 5 4 3 20 2 TJ = 25ºC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 2 4 8 10 12 14 16 18 20 22 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 f = 1 MHz Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 6 QG - NanoCoulombs VSD - Volts Coss 100 0.10 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_42N15T(3G)11-21-08-A IXTA42N15T IXTP42N15T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 20 20 RG = 10Ω 18 VGS = 15V VDS = 75V t r - Nanoseconds t r - Nanoseconds 18 16 14 I 12 I D D = 42A = 21A TJ = 25ºC 16 RG = 10Ω 14 VGS = 15V VDS = 75V 12 10 10 TJ = 125ºC 8 8 25 35 45 55 65 75 85 95 105 115 20 125 22 24 26 28 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 26 20 24 18 16 I D = 42A, 21A 26 48 14 34 38 42 46 50 I D = 42A 25 35 45 RG - Ohms 58 56 RG = 10Ω, VGS = 15V 85 95 105 115 44 125 260 23 52 21 50 TJ = 25ºC 19 48 17 td(off) - - - - 220 TJ = 125ºC, VGS = 15V VDS = 75V 60 180 50 40 140 100 I D = 21A 30 46 20 44 10 I D 60 = 42A t d ( o f f ) - Nanoseconds 54 TJ = 25ºC tf 70 t d ( o f f ) - Nanoseconds VDS = 75V t f - Nanoseconds 75 80 td(off) - - - - t f - Nanoseconds tf 25 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 29 TJ = 125ºC 55 46 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 27 52 18 10 30 I D = 21A 50 16 26 54 20 12 8 56 RG = 10Ω, VGS = 15V 22 12 22 42 td(off) - - - - 24 14 18 40 VDS = 75V 16 14 38 t d ( o f f ) - Nanoseconds 22 28 10 36 58 tf t d ( o n ) - Nanoseconds VDS = 75V 20 34 28 24 TJ = 125ºC, VGS = 15V 32 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 36 32 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 40 tr 30 ID - Amperes 20 TJ = 125ºC 15 20 22 24 26 28 30 32 34 36 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 38 40 42 -20 10 14 18 22 26 30 34 38 42 46 50 RG - Ohms IXYS REF: T_42N15T(3G)11-21-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.