IXTP42N25P

PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS ID25 RDS(on) = 250 V = 42 A ≤ 84 mΩ Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 42 110 A A IAR TC = 25° C 42 A EAR TC = 25° C 30 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD TC = 25° C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) G (TAB) TO-220 (IXTP) G g g g G BVDSS VGS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 125° C (TAB) S (TAB) D = Drain TAB = Drain Features l Characteristic Values Min. Typ. Max. D G = Gate S = Source l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D S TO-3P (IXTQ) 1.13/10 Nm/lb.in. 5.5 4 3 S l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V 5.5 V ±100 nA 25 250 µA µA 84 mΩ Advantages l l l Easy to mount Space savings High power density DS99157E(12/05) IXTA 42N25P IXTP 42N25P IXTQ 42N25P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 12 Ciss Coss 20 S 2300 pF 430 pF 115 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 24 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 28 ns td(off) RG = 10 Ω (External) 81 ns tf 30 ns Qg(on) 70 nC 17 nC 37 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS 0.42°C/W (TO-3P) (TO-220) Source-Drain Diode °C/W °C/W 0.21 0.25 Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 42 A ISM Repetitive 110 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM TO-3P (IXTQ) Outline 200 ns 2.0 µC TO-220 (IXTP) Outline TO-263 (IXTA) Outline Pins: 1 - Gate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain IXTA 42N25P IXTP 42N25P IXTQ 42N25P Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte r is tics @ 25º C @ 25º C 110 45 V GS = 10V 40 90 35 30 25 7V 20 15 9V 80 8V I D - Amperes I D - Amperes V GS = 10V 100 9V 6V 70 8V 60 50 40 7V 30 10 20 5 6V 5V 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 3 6 9 V D S - V olts Fig. 3. Output Characte ris tics @ 125ºC 15 18 21 24 27 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 45 2.8 V GS = 10V 40 2.6 9V 8V 30 25 7V 20 15 6V 10 V GS = 10V 2.4 R D S ( o n ) - Normalized 35 I D - Amperes 12 V D S - V olts 2.2 2 1.8 I D = 42A 1.6 1.4 I D = 21A 1.2 1 0.8 5 0.6 5V 0 0.4 0 1 2 3 4 5 V D S - V olts 6 7 8 9 -50 50 75 100 125 150 45 V GS = 10V 40 3.8 35 3.4 I D - Amperes R D S ( o n ) - Normalized 25 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 0.5 ID25 V alue vs . ID 4.2 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 4.6 -25 TJ = 125ºC 3 2.6 2.2 1.8 30 25 20 15 10 1.4 TJ = 25ºC 1 0.6 5 0 0 10 20 30 40 50 60 70 I D - A mperes © 2006 IXYS All rights reserved 80 90 100 110 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 42N25P IXTP 42N25P IXTQ 42N25P Fig. 8. Transconductance Fig. 7. Input Adm ittance 30 70 TJ = -40ºC 27 60 25ºC 125ºC 24 40 30 TJ = 125ºC 20 21 g f s - Siemens I D - Amperes 50 18 15 12 9 25ºC -40ºC 10 6 3 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 8.5 10 20 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 50 70 80 90 10 105 90 VG S - Volts 75 60 45 TJ = 125ºC 9 VDS = 125V 8 I D = 21A 7 I G = 10mA 6 5 4 3 30 2 TJ = 25ºC 15 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 0 1.4 10 20 30 40 50 60 70 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TJ = 150ºC C iss TC = 25ºC R DS(on) Limit I D - Amperes Capacitance - picoFarads 60 Fig. 10. Gate Charge 120 I S - Amperes 40 I D - Amperes 1000 C oss 100 100 25µs 100µs 1ms 10 C rss 10ms DC 10 1 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTA 42N25P IXTP 42N25P IXTQ 42N25P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e 0.45 0.40 R ( t h ) J C - ºC / W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.