IXTP4N65X2

P r o d u c t Efficiency Through Technology B r i e f 650V Ultra Junction X2-Class POWER MOSFETs Ideal for Power Factor Correction (PFC) circuits and switching power supplies AUGUST 2015 OVERVIEW D TO-220 S TO-263 G IXYS Corporation (NASDAQ: IXYS), a manufacturer of power semiconductors and integrated circuits for energy efficiency, power management, and motor control applications, announces a new power MOSFET product line: 650V Ultra Junction X2-Class Power MOSFETs. With current ratings ranging from 2A to 120A and on-resistance as low as 24 milliohms, they are well-suited for high-efficiency, high-speed power switching applications. These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. Designed for such applications as Power Factor Correction (PFC) circuits, switched-mode and resonant-mode power supplies, DC-DC converters, AC and DC motor drives, and robotic and servo control, these MOSFETs enable higher efficiency, along with high power density and cooler system performance. The new 650V Ultra Junction Power MOSFETs are available in the following international standard size packages: TO-252, TO-220 (standard or overmolded), TO-263, SOT-227, TO-247, PLUS247, ISOPLUS247, and TO-264. Some example part numbers include IXTY2N65X2, IXTA4N65X2, IXTP8N65X2, and IXTK102N65X2, with drain current ratings of 2A, 4A, 8A, and 102A, respectively. FEATURES Low RDS(ON) and Qg dv/dt ruggedness Avalanche rated Low package inductance International standard packages ADVANTAGES Higher efficiency High power density Easy to mount Space savings www.ixys.com TO-220(overmolded) TO-252 SOT-227 PLUS247 TO-247 TO-264 ISOPLUS247 APPLICATIONS Power Factor Correction (PFC) circuits Switched-mode and resonant mode power supplies DC-DC converters AC and DC motor drives Robotic and servo control Solar inverters Lighting control Available Parts Part Number VDSS ID25 RDS(on) max TJ=25°C (Ω) Ciss typ Qg(on) typ trr typ RthJC max PD max (pF) (nC) (ns) (°C/W) (W) 2.3 180 4.3 137 2.27 55 TO-252 TO-220 Package Type (V) TC = 25°C (A) IXTY2N65X2 650 2 IXTP2N65X2 650 2 2.3 180 4.3 137 2.27 55 IXTP4N65X2 650 4 0.85 455 8.3 160 1.56 80 TO-220 IXTP8N65X2M 650 4 0.55 800 12 200 3.9 32 TO-220 (overmolded) IXTY4N65X2 650 4 0.85 455 8.3 160 1.56 80 TO-252 IXTA4N65X2 650 4 0.85 455 8.3 160 1.56 80 TO-263 IXTY8N65X2 650 8 0.5 800 12 200 0.83 150 TO-252 IXTA8N65X2 650 8 0.5 800 12 200 0.83 150 TO-263 IXTP8N65X2 650 8 0.5 800 12 200 0.83 150 TO-263 IXTA12N65X2 650 12 0.3 1100 17 220 0.69 180 TO-263 IXTH12N65X2 650 12 0.3 1100 17 220 0.69 180 TO-247 IXTP12N65X2 650 12 0.3 1100 17 220 0.69 180 TO-220 IXTH34N65X2 650 34 0.105 3120 53 400 0.22 540 TO-247 IXTH48N65X2 650 48 0.068 4420 77 400 0.19 660 TO-247 IXTR102N65X2 650 54 0.033 10900 152 450 0.38 330 ISOPLUS247 IXTH62N65X2 650 62 0.052 5940 104 420 0.16 780 TO-247 IXTN102N65X2 650 76 0.03 10900 152 450 0.21 595 SOT-227 IXTH80N65X2 650 80 0.04 7753 144 400 0.14 890 TO-247 IXTX102N65X2 650 102 0.03 10900 152 450 0.12 1040 PLUS247 IXTK102N65X2 650 102 0.03 10900 152 450 0.12 1040 TO-264 IXTX120N65X2 650 120 0.024 13600 240 410 0.1 1250 PLUS247 IXTK120N65X2 650 120 0.024 13600 240 410 0.1 1250 TO-264 Application Circuits Application Circuits Legend Figure 1 illustrates a simplified SMPS circuit diagram that uses an LLC resonant converter as the primary power conversion element of the circuit. The indicated SMPS circuit consists of a primary rectifier, power factor correction circuit, control unit (power supply, MCU, and MOSFET Driver), LLC half-bridge resonant converter, isolation transformer, and secondary rectifier stage. Two Ultra Junction X2-Class Power MOSFETs (IXTN102N65X2) are paired to form the LLC half-bridge resonant converter stage to ensure a fast, space-saving, and energyefficient power switching operation. M2 VAC Input M1 Figure 1: SMPS - Half-Bridge Resonant-Mode Converter Figure 2 portrays a simplified low-side brushed DC motor drive circuit. A rectified voltage is applied across the brushed DC motor which varies according to a Pulse Width Modulation (PWM) signal at an inaudible switching frequency (typically higher than 20 kHz). A DC supply provides a smooth current operation, reducing (acoustic) motor noise and improving motor efficiency. An X2-Class Power MOSFET, the IXTK102N65X2 (M1), is used as the main switching element to ensure an efficient and reliable power switching operation. Brushed DC Motor D1 Power Supply VAC Input M CDC MCU MOSFET Gate Driver M1 Current R Sensing Resistor Pre-charge diode Figure 2: Brushed DC Motor Drive D2 Vout D1 + IL Power Supply AC mains CL CDC MCU MOSFET Gate Driver M1 Figure 3 depicts a Power Factor Correction (PFC) circuit– a boost converter topology. An AC power source is converted into a DC value via a bridge rectifier stage. This DC value is then processed by the PFC boost converter to keep the mains current and voltage in phase and provide a DC bus voltage which is higher than the rectified output. The IXTX102N65X2 (M1) is used as a switch to achieve high efficiency. - Figure 3: Power Factor Correction (PFC) circuit August 2015 www.ixys.com1.3