IXTP50N20PM

IXTP50N20PM PolarTM Power MOSFET VDSS ID25 RDS(on) = 200V = 50A  60m  (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions VDSS TJ = 25C to 175C Maximum Ratings 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 50 A IDM TC = 25C, Pulse Width Limited by TJM 120 A G G = Gate S = Source IA TC = 25C 50 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 90 W -55 ... +175 C  TJM 175 C  Tstg -55 ... +175 C  300 260 °C °C 1.13 / 10 Nm/lb.in 3 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight DS Isolated Tab D = Drain Features   Plastic Overmolded Tab for Electrical Isolation International Standard Package Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 25A, Note 1  V 5.0 V 100 nA      TJ = 150C © 2018 IXYS CORPORATION, All Rights Reserved 25 A 250 A  Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters AC and DC Motor Drives Robotics and Servo Controls Battery Chargers Uninterrupted Power Supplies High Speed Power Swicthing Applications 60 m DS99564H(5/18) IXTP50N20PM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 12 VDS = 10V, ID = 25A, Note 1 23 S 2720 pF 490 pF 105 pF Resistive Switching Times 26 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 35 ns 70 ns 30 ns 70 nC 17 nC 37 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf RG =10 (External) Qg(on) Qgs OVERMOLDED TO-220 (IXTP...M) VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd 1 2 3 1.66 C/W RthJC RthCS 0.50 C/W Terminals: 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 50 A Repetitive, Pulse Width Limited by TJM 200 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IF = 25A, -di/dt = 100A/μs 150 2 ns C 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP50N20PM o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 50 VGS = 10V 45 90 9V 40 35 70 8V 30 I D - Amperes I D - Amperes VGS = 10V 80 25 20 7V 15 9V 60 50 40 8V 30 10 7V 20 5 10 6V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 VDS - Volts 15 20 25 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 50 3.2 VGS = 10V 45 9V 2.8 8V 2.4 VGS = 10V I D - Amperes 35 RDS(on) - Normalized 40 30 25 20 7V 15 I D = 50A 2.0 I D = 25A 1.6 1.2 6V 10 0.8 5 5V 0.4 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current 4.5 75 100 125 150 175 Fig. 6. Input Admittance 100 90 VGS = 10V 4.0 50 TJ - Degrees Centigrade VDS = 10V 80 o 70 TJ = 175 C 3.0 I D - Amperes RDS(on) - Normalized 3.5 2.5 2.0 o TJ = 125 C 60 50 40 30 1.5 o TJ = 150 C 20 1.0 o 25 C o 10 o TJ = 25 C - 40 C 0 0.5 0 10 20 30 40 50 60 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 70 80 90 100 3 4 5 6 7 VGS - Volts 8 9 10 IXTP50N20PM Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 36 150 o TJ = - 40 C VDS = 10V 32 125 28 o 25 C 20 100 I S - Amperes g f s - Siemens 24 o 150 C 16 12 75 50 o TJ = 150 C 8 o 25 4 0 0 10 20 30 40 50 60 70 80 90 100 110 TJ = 25 C 0 120 0.3 0.4 0.5 0.6 0.7 0.8 I D - Amperes 1.0 1.1 1.2 1.3 1.4 1.5 Fig. 10. Capacitance Fig. 9. Gate Charge 10 10,000 9 VDS = 100V Capacitance - PicoFarads I D = 25A 8 I G = 10mA 7 6 V GS - Volts 0.9 VSD - Volts 5 4 3 Ciss 1,000 Coss 100 Crss 2 f = 1 MHz 1 10 0 0 10 20 30 40 50 60 0 70 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 10 1000 o TJ = 175 C o TC = 25 C Single Pulse 1 Z (th)JC - K / W I D - Amperes 100 25μs RDS(on) Limit 100μs 10 1ms 0.1 10ms DC 1 1 10 100 1,000 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_50N20P(6E-722) 5-8-18-G Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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