IXTP5N60P

PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 ID25 = 5 RDS(on) ≤ 1.7 V A Ω Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω PD TC = 25°C TL TSOLD Md Weight 5 10 A A 5 20 360 A mJ mJ 10 V/ns 100 W -55 ... +150 150 -55 ... +150 °C °C °C TO-263 (IXTA) G VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 50μA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % G D S G = Gate S = Source (TAB) (TAB) D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. S TO-220 (IXTP) z BVDSS © 2006 IXYS All rights reserved V V 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) ± 30 ± 40 O O BS TJ TJM Tstg Maximum Ratings 600 V 600 V LE Symbol VDSS VDGR TE N-Channel Enhancement Mode Avalanche Rated z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V 5.5 V ±100 nA 5 50 μA μA 1.7 Ω Advantages z z z Easy to mount Space savings High power density DS99426E(04/06) IXTA 5N60P IXTP 5N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 3.0 5.0 S 750 pF 78 pF Crss 6.3 pF td(on) 22 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 ns td(off) RG = 18 Ω (External) 55 ns tf 17 Qg(on) Qgs 14.2 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 4.8 Qgd 4.8 ns nC nC nC 1.25 °C/W RthJC (TO-220) 0.25 °C/W LE RthCS TE tr TO-263 (IXTA) Outline Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, IF = 5 A, -di/dt = 100 A/μs trr Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % O Symbol 5 A 15 A 1.5 V ns O BS 500 TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 5N60P IXTP 5N60P Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte ris tics @ 25º C @ 25º C 5 10 V GS = 10V 4.5 V GS = 10V 9 8V 8V 4 8 I D - Amperes 7 7V 3 2.5 2 6V 1.5 5 4 3 TE 6V 1 0.5 0 0 0 1 2 3 4 5 6 7 8 V D S - V olts 0 3 6 12 15 18 21 24 27 30 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e LE @ 125º C 5 2.6 V GS = 10V 4.5 2.4 8V 7V 4 3 6V O 2.5 2 1 5V O BS 0.5 2 4 6 8 10 12 2 1.8 1.6 1.4 1.2 I D = 2.5A 1 0.8 0.4 14 -50 16 -25 V D S - V olts 25 50 75 100 125 150 Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature 0.5 ID25 V alue vs . ID 2.8 5.5 5.0 V GS = 10V 4.5 2.4 2.2 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 2.6 I D = 5A 0.6 0 0 V GS = 10V 2.2 3.5 1.5 4.0 TJ = 125 º C I D - Amperes R D S ( o n ) - Normalized 9 V D S - V olts Fig. 3. Output Characte ris tics I D - Amperes 7V 6 2 1 R D S ( o n ) - Normalized I D - Amperes 3.5 2 1.8 1.6 1.4 3.5 3.0 2.5 2.0 1.5 1.2 1.0 TJ = 25 º C 1 0.5 0.8 0.0 0 1 2 3 4 5 6 I D - A mperes © 2006 IXYS All rights reserved 7 8 9 10 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 5N60P IXTP 5N60P Fig. 8. Tr ans conductance Fig. 7. Input Adm ittance 6 9 8 5 25 º C - Siemens -40 º C fs 4 TJ = 125 º C 3 2 6 5 4 T J = -40 º C 3 g I D - Amperes 7 25 º C 125 º C TE 2 1 1 0 0 4 4.5 5 5.5 6 6.5 0 7 V G S - V olts 2 3 4 5 6 I D - A mperes Fig. 9. Source Curr e nt vs . Sour ce -To-Dr ain V oltage Fig. 10. Gate Char ge LE 14 10 12 V G S - Volts 10 8 TJ = 125 º C 6 O I S - Amperes 1 4 TJ = 25 º C O BS 2 0 0.5 0.6 0.7 0.8 9 V DS = 300V 8 I D = 2.5A 7 I G = 10m A 6 5 4 3 2 1 0 0.9 0 2 4 V S D - V olts G 8 10 12 14 16 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The r m al Re s is tance Fig. 11. Capacitance 10000 6 Q 10.00 1000 C is s 100 C os s R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z 1.00 0.10 10 C rs s 1 0.01 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.