IXTP6N50P

PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P VDSS = 500 V ID25 = 6 A RDS(on) ≤ 1.1 Ω Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω PD TC = 25° C 500 500 V V ± 30 ± 40 V V 6 15 A A 6 20 250 A mJ mJ 10 V/ns 100 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C O O BS TJ TJM Tstg Maximum Ratings TO-263 (IXTA) G LE Symbol TE N-Channel Enhancement Mode Avalanche Rated TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-263 (TO-220) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) 1.13/10 Nm/lb.in. 4 3 500 VGS(th) VDS = VGS, ID = 50µA 3.0 IGSS VGS = ±30 V, VDS = 0V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved V 5.0 V ±100 nA 5 50 µA µA 1.1 Ω G D S G = Gate S = Source (TAB) D = Drain TAB = Drain Features l l l VGS = 0 V, ID = 250 µA (TAB) TO-220 (IXTP) Characteristic Values Min. Typ. Max. BVDSS TJ = 125° C g g S International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99447E(04/06) IXTA 6N50P IXTP 6N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 3.5 5.5 S 740 pF 85 pF Crss 8 pF td(on) 26 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 28 ns td(off) RG = 18 Ω (External) 65 ns tf 26 Qg(on) Qgs 14.6 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 4.8 Qgd 5.6 RthJC ns nC nC nC 1.25° C/W (TO-220) 0.25 ° C/W LE RthCS TE tr TO-263 (IXTA) Outline Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, -di/dt = 100 A/µs trr Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % O Symbol 6 A 18 A 1.5 V ns O BS 400 TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 6N50P IXTP 6N50P Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte ris tics @ 25º C @ 25º C 6 14 V GS = 10V V GS = 10V 5 6V 2 8 6 6V 4 TE 3 I D - Amperes 7V 1 2 5V 5V 0 0 1 2 3 4 5 6 7 V D S - V olts Fig. 3. Output Characte ris tics 6 0 0 3 6 12 15 18 V D S - V olts 21 24 27 30 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 2.6 V GS = 10V 2.4 7V 5 4 6V O 3 2 O BS 1 2 4 6 8 10 12 2 1.8 1.6 1.4 I D = 3A 1.2 1 0.8 0.4 14 -50 -25 V D S - V olts 2.4 100 125 150 5 I D - Amperes 2.2 2 1.8 1.6 4 3 2 TJ = 25 º C 1.2 75 6 TJ = 125 º C 1.4 50 7 V GS = 10V 2.6 25 Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature 0.5 ID25 V alue vs . ID 2.8 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 3 I D = 6A 0.6 0 0 V GS = 10V 2.2 5V R D S ( o n ) - Normalized 9 LE @ 125º C I D - Amperes 8V 10 4 R D S ( o n ) - Normalized I D - Amperes 12 7V 1 1 0.8 0 0 2 4 6 8 I D - A mperes © 2006 IXYS All rights reserved 10 12 14 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 6N50P IXTP 6N50P Fig. 8. Tr ans conductance Fig. 7. Input Adm ittance 8 10 7 9 8 - Siemens 5 4 3 2 6 5 25 º C 4 -40 º C 3 TE 2 1 1 0 0 4 4.5 5 5.5 6 0 6.5 V G S - V olts 1 2 3 4 5 7 8 12 14 16 Fig. 10. Gate Char ge LE 10 18 16 14 V G S - Volts 12 8 TJ = 125 º C 6 O 10 TJ = 25 º C 4 O BS 2 0 0.4 0.5 0.6 0.7 0.8 0.9 9 V DS = 250V 8 I D = 3A 7 I G = 10m A 6 5 4 3 2 1 0 1 0 2 4 V S D - V olts 6 Q G 8 10 - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 10000 100 T J = 150 º C f = 1MH z C iss 100 C oss T C = 25 º C R DS(on) Lim it 1000 I D - Amperes Capacitance - picoFarads 6 I D - A mperes Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage I S - Amperes 25 º C 125 º C fs TJ = 125 º C TJ = -40 º C 7 g I D - Amperes 6 10 25µs 100µs 1m s 1 DC 10 10m s C rs s 1 0.1 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTA 6N50P IXTP 6N50P Fig. 13. Maxim um Transient Therm al Resistance 1.00 0.10 0.01 0.00001 0.0001 0.001 TE R ( t h ) J C - ºC / W 10.00 0.01 0.1 O BS O LE Pulse Width - milliseconds © 2006 IXYS All rights reserved 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.