IXTP70N075T2

IXTA70N075T2 IXTP70N075T2 TrenchT2TM Power MOSFET VDSS ID25 = 75V = 70A  12m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C, RGS = 1M 75 V VGSM Transient 20 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 70 180 A A IA TC = 25C 40 A EAS TC = 25C 300 mJ PD TC = 25C 150 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 75 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V Applications 4.0 V             200 nA 2 A 200 A TJ = 150C RDS(on) VGS = 10V, ID = 25A, Notes 1 & 2  10 12 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS99951B(7/18) IXTA70N075T2 IXTP70N075T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 VDS = 10V, ID = 0.5 • ID25, Note 1 36 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd E S 2725 pF 334 pF 60 pF 15 ns 28 ns 31 ns 22 ns 46 nC 14 nC 7.5 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 1.00 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 25A, VGS = 0V, Note 1 0.86 70 A 280 A 1.0 TO-220 Outline E A oP A1 V H1 Q trr IRM QRM IF = 50A, VGS = 0V, -di/dt = 100A/s, VR = 38V 48 ns 3.7 A 89 nC D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA70N075T2 IXTP70N075T2 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 70 VGS = 15V 10V 9V 60 10V 50 200 7V 9V I D - Amperes I D - Amperes VGS = 15V 250 8V 40 30 6V 150 8V 100 20 7V 50 10 6V 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 5 10 20 Fig. 4. RDS(on) Normalized to ID = 35A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 70 2.6 VGS = 15V 10V 9V 8V 60 2.4 VGS = 10V 2.2 RDS(on) - Normalized 7V 50 I D - Amperes 15 VDS - Volts VDS - Volts 40 6V 30 20 I D = 70A 1.8 I D = 35A 1.6 1.4 1.2 1.0 0.8 5V 10 2.0 0.6 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 VDS - Volts 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 80 VGS = 10V 15V 3.5 70 60 3.0 o TJ = 175 C I D - Amperes RDS(on) - Normalized 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 35A Value vs. Drain Current 4.0 25 2.5 2.0 1.5 50 40 30 20 o TJ = 25 C 1.0 10 0 0.5 0 20 40 60 80 100 120 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXTA70N075T2 IXTP70N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 60 80 o TJ = - 40 C 70 50 g f s - Siemens I D - Amperes 60 50 40 o TJ = 150 C 30 o 25 C o - 40 C 20 40 25 C 30 150 C o o 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 50 60 70 80 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 250 10 VDS = 37.5V 9 200 I D = 25A 8 I G = 10mA 150 6 VGS - Volts I S - Amperes 7 100 5 4 3 o TJ = 150 C 50 2 o TJ = 25 C 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 5 10 15 20 25 30 35 40 45 50 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 10,000 Capacitance - PicoFarads f = 1 MHz RDS(ON) Limit Ciss 100 - Amperes 1,000 100μs I D Coss 25μs 100 10 1ms o TJ = 175 C Crss o TC = 25 C Single Pulse 10 100ms 10ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXTA70N075T2 IXTP70N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 32 32 30 30 RG = 5Ω, VGS = 10V o TJ = 25 C 28 t r - Nanoseconds t r - Nanoseconds VDS = 38V 26 I D = 30A 24 22 28 26 RG = 5Ω, VGS = 10V VDS = 38V 24 I D = 10A 22 20 18 o TJ = 125 C 20 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 18 TJ - Degrees Centigrade 55 26 VDS = 38V 22 I D = 10A, 30A 20 30 18 25 16 20 14 15 6 8 10 12 14 16 18 td(off) VDS = 38V 23 44 I D = 10A 22 36 20 32 19 28 18 25 35 45 55 VDS = 38V 80 48 70 44 60 40 o TJ = 25 C 21.0 36 20.5 85 95 105 115 24 125 32 o TJ = 25 C 20.0 28 tf 100 td(off) 90 o TJ = 125 C, VGS = 10V VDS = 38V 80 50 70 I D = 10A, 30A 40 60 30 50 20 40 I D = 30A 19.5 o TJ = 125 C 19.0 10 12 14 16 18 20 22 24 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 26 28 30 24 10 20 0 30 20 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds 21.5 52 t d(off) - Nanoseconds t f - Nanoseconds td(off) RG = 5Ω, VGS = 10V 22.0 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds o 65 TJ - Degrees Centigrade tf TJ = 125 C 40 21 20 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 22.5 48 RG = 5Ω, VGS = 10V RG - Ohms 23.0 30 I D = 30A 12 4 28 t d(off) - Nanoseconds 40 t f - Nanoseconds 24 35 26 52 tf 24 t d(on) - Nanoseconds t r - Nanoseconds td(on) o TJ = 125 C, VGS = 10V 45 24 25 28 tr 22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 50 20 I D - Amperes IXTA70N075T2 IXTP70N075T2 Fig. 19. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_70N075T2 (V2) 7-10-18-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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