IXTP76N075T

Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 75 75 V V Transient ± 20 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 76 75 210 A A A IAR EAS TC = 25°C TC = 25°C 10 500 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 10 Ω 3 V/ns PD TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-263 176 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 3 2.5 g g TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 75 VGS(th) VDS = VGS, ID = 50 μA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) V TJ = 150°C VGS = 10 V, ID = 25 A, Notes 1, 2 9.7 4.0 V ± 100 nA 1 250 μA μA 12 mΩ Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99632 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTA76N075T IXTP76N075T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Ciss Coss TO-263 (IXTA) Outline Min. Typ. 30 55 S 2580 pF 390 pF 90 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. td(on) Resistive Switching Times 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 40 ns td(off) RG = 10 Ω (External) 38 ns 33 ns tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A Qgd 57 nC 13.6 nC 12.4 nC 0.85 °C/W RthJC RthCH Pins: TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) IS VGS = 0 V ISM Characteristic Values Min. Typ. Max. 76 A Pulse width limited by TJM 240 A VSD IF = 25 A, VGS = 0 V, Note 1 1.1 V t rr IF = 25 A, -di/dt = 100 A/μs 80 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 TO-220 (IXTP) Outline ns VR = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. PRELIMINARYTECHNICALINFORMATION Pins: The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA76N075T IXTP76N075T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 80 300 VGS = 10V 9V 8V 70 V GS = 10V 270 9V 240 60 ID - Amperes ID - Amperes 210 50 7V 40 6V 30 8V 180 150 7V 120 90 6V 20 60 10 30 5V 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 2 4 6 8 10 12 14 16 18 20 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 38A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 80 2.6 VGS = 10V 9V 8V 70 VGS = 10V 2.4 2.2 RDS(on) - Normalized 60 ID - Amperes 7V 50 6V 40 30 20 5V 2.0 1.8 I D = 76A 1.6 I D = 38A 1.4 1.2 1.0 10 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 38A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 3.2 80 VGS = 10V 15V - - - - 3 2.8 TJ = 175ºC 70 2.6 60 2.4 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.2 2 1.8 50 40 30 1.6 1.4 20 1.2 10 TJ = 25ºC 1 0.8 0 0 25 50 75 100 125 150 175 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 200 225 250 275 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA76N075T IXTP76N075T Fig. 8. Transconductance Fig. 7. Input Admittance 140 80 120 70 TJ = - 40ºC TJ = -40ºC 25ºC 150ºC 60 g f s - Siemens ID - Amperes 100 80 60 40 25ºC 50 40 150ºC 30 20 20 10 0 0 3 3.5 4 4.5 5 5.5 6 6.5 7 0 7.5 20 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 100 120 140 Fig. 10. Gate Charge 220 10 200 9 180 8 VDS = 38V I D = 10A 160 I G = 10mA 7 140 VGS - Volts IS - Amperes 60 I D - Amperes 120 100 80 5 4 3 TJ = 150ºC 60 6 2 40 TJ = 25ºC 20 1 0 0 0.4 0.6 0.8 1 1.2 1.4 0 1.6 5 10 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 f = 1 MHz 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads C iss C oss 100 0.10 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA76N075T IXTP76N075T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 50 50 RG = 10Ω 47 44 TJ = 25ºC 44 VDS = 37V 41 t r - Nanoseconds t r - Nanoseconds 47 VGS = 10V 38 35 32 29 I D = 30A 41 38 RG = 10Ω 35 VGS = 10V 32 VDS = 37V 29 26 26 I D = 10A 23 TJ = 125ºC 23 20 20 17 17 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 34 24 26 28 35 30 60 V DS = 37V 32 I D = 30A 34 60 28 I D = 10A 50 26 40 24 30 22 33 50 I D = 30A 32 20 10 18 45 31 40 td(off) - - - - tf 30 20 55 I D = 10A t d ( o f f ) - Nanoseconds 30 t f - Nanoseconds TJ = 125ºC, VGS = 10V t d ( o n ) - Nanoseconds t r - Nanoseconds 22 td(on) - - - - tr 70 20 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 90 80 18 I D - Amperes 35 RG = 10Ω, VGS = 10V V DS = 37V 10 12 14 16 18 20 22 24 26 28 30 32 29 34 25 35 45 RG - Ohms 65 32 45 31 40 29 22 24 150 TJ = 125ºC, VGS = 10V 26 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 28 30 80 130 70 110 I D = 10A 60 90 I D = 30A 50 70 35 40 50 30 30 TJ = 25ºC 30 t f - Nanoseconds 50 20 30 125 t d ( o f f ) - Nanoseconds 33 18 115 VDS = 37V 55 16 105 170 90 t d ( o f f ) - Nanoseconds t f - Nanoseconds 60 VDS = 37V 34 14 95 td(off) - - - - tf RG = 10Ω, VGS = 10V 12 85 100 td(off) - - - - tf 10 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 36 TJ = 125ºC 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 35 55 30 10 12 14 16 18 20 22 24 26 28 30 32 34 RG - Ohms IXYS REF: T_76N075T (2V) 7-06-06.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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