IXTP7N60P

PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS(on) ≤ 1.1 V A Ω Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω PD TC = 25° C TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-263 (TO-220) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) V V ±30 ±40 V V TO-220 (IXTP) G A A D S 7 20 400 A mJ mJ 10 V/ns 150 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 100µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 125° C V 5.5 V ±100 nA 5 50 µA µA 1.1 Ω S (TAB) D = Drain TAB = Drain Features l l g g Characteristic Values Min. Typ. Max. G G = Gate S = Source l 4 3 (TAB) TO-263 (IXTA) 1.13/10 Nm/lb.in. BVDSS © 2006 IXYS All rights reserved 600 600 7 14 O O BS TJ TJM Tstg Maximum Ratings LE Symbol TE N-Channel Enhancement Mode Avalanche Rated International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99320E(03/06) IXTA 7N60P IXTP 7N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 4 Ciss 7 S 1080 pF 110 pF Crss 11 pF td(on) 20 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns td(off) RG = 18 Ω (External) 65 ns tf 26 Qg(on) Qgs 20 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 7 Qgd 7 ns Pins: 1 - Gate 2 - Drain nC nC nC 0.83 ° C/W RthJC (TO-220) 0.25 ° C/W LE RthCS TE tr TO-220 (IXTP) Outline Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr IF = 7 A, VGS = 0 V -di/dt = 100 A/µs, VR = 100 V O BS O Symbol 7 A 14 A 1.5 V 500 TO-263 (IXTA) Outline ns Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 6,710,405B2 6,759,692 6,710,463 6,771,478 B2 IXTA 7N60P IXTP 7N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 7 14 VGS = 10V 6 8V 10 I D - Amperes I D - Amperes 5 4 3 6V 7V 8 6 6V 4 1 TE 2 2 5V 5V 0 0 0 1 2 3 4 5 6 7 8 V D S - Volts 0 3 6 12 15 18 21 24 27 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 7 LE @ 125ºC 2.6 VGS = 10V 2.4 8V 7V 6V 4 O 3 2 O BS 2 4 6 8 10 12 14 1.8 1.6 1.4 I D = 3.5A 1.2 1 0.4 -50 16 -25 Fig. 5. RDS(on) Norm alized to 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.6 8 VGS = 10V 2.2 0 TJ - Degrees Centigrade V D S - Volts 2.4 I D = 7A 0.6 0 0 2 0.8 5V 1 VGS = 10V 2.2 5 R D S ( o n ) - Normalized 6 7 TJ = 125º C 6 2 I D - Amperes R D S ( o n ) - Normalized 9 V D S - Volts Fig. 3. Output Characteristics I D - Amperes VGS = 10V 12 8V 7V 1.8 1.6 1.4 5 4 3 2 1.2 TJ = 25º C 1 1 0.8 0 0 2 4 6 8 I D - Amperes © 2006 IXYS All rights reserved 10 12 14 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 7N60P IXTP 7N60P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 12 9 11 10 9 6 8 5 - Siemens 7 TJ =125 º C 4 fs 25 º C -40 º C 3 g I D - Amperes 8 25 º C 125 º C 7 6 5 4 3 2 TE 2 1 1 0 0 4 4.5 5 5.5 6 6.5 0 7 1 2 3 4 5 6 7 8 9 10 18 20 22 I D - A mperes V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage LE Fig. 10. Gate Char ge 10 20 18 16 V G S - Volts 14 12 10 TJ = 125 º C 8 6 O I S - Amperes TJ = -40 º C TJ = 25 º C 4 O BS 2 0 0.4 0.5 0.6 0.7 0.8 0.9 9 V DS = 300V 8 I D = 3.5A 7 I G = 10m A 6 5 4 3 2 1 0 0 1 V S D - V olts 4 6 Q 8 G 10 12 14 16 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The rm al Re s is tance Fig. 11. Capacitance 10000 2 1.00 1000 C iss 100 C oss R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z 10 C rs s 1 0.10 0 5 10 15 20 25 30 35 40 V D S - V olts 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_7N60P (37) 03-21-06B.XLS Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.