IXTP80N075L2

Advance Technical Information IXTA80N075L2 IXTP80N075L2 IXTH80N075L2 LinearL2TM Power MOSFETs w/Extended FBSOA VDSS ID25 = 75V = 80A  24m  RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-263AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 75 V VDGR TJ = 25C to 150C, RGS = 1M 75 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 80 A IDM TC = 25C, Pulse Width Limited by TJM 180 A IA EAS TC = 25C TC = 25C 40 2.5 A J PD TC = 25C 357 W -55 to +150 C TJM +150 C Tstg -55 to +150 C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 °C °C FC Md Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 TO-247 2.5 3.0 6.0 g g g G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     Designed for Linear Operation International Standard Packages Avalanche Rated Guaranteed FBSOA at 75C Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 75 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications V  4.5 V  100 nA  5 A 25 A   Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators 24 m DS100556(8/13) IXTA80N075L2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 24 VDS = 10V, ID = 0.5 • ID25, Note 1 30 VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Integrated Gate Input Resistor td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 0 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd pF 935 pF 325 pF 1.2  15 ns 35 ns 40 ns 12 ns 103 nC 14 nC 48 nC 0.35 C/W RthJC RthCS S 3600 Ciss Coss 36 IXTP80N075L2 IXTH80N075L2 TO-220 TO-247 0.50 0.21 C/W C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 75V, ID = 2.86A, TC = 75°C, Tp = 5s 214 W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 40A, -di/dt = 100A/s, VR = 38V, VGS = 0V 160 14 1.3 80 A 320 A 1.4 V ns A μC Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA80N075L2 Fig. 1. Output Characteristics @ TJ = 25ºC IXTP80N075L2 IXTH80N075L2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 VGS = 20V VGS = 20V 15V 12V 10V 9V 70 60 200 8V 50 40 I D - Amperes I D - Amperes 15V 13V 12V 250 7V 30 11V 10V 150 9V 100 6V 8V 20 7V 50 10 5V 6V 0 0 0.5 1 1.5 2 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature 2.4 80 VGS = 20V 15V 12V 10V 9V 60 VGS = 10V 2.0 8V R DS(on) - Normalized 70 I D - Amperes 5V 0 50 7V 40 30 I D = 80A 1.6 I D = 40A 1.2 6V 20 0.8 10 5V 0 0.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 90 3.5 VGS = 10V 80 3.0 2.5 60 TJ = 125ºC I D - Amperes RDS(on) - Normalized 70 2.0 50 40 30 1.5 TJ = 25ºC 20 1.0 10 0.5 0 0 20 40 60 80 100 120 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA80N075L2 IXTP80N075L2 IXTH80N075L2 Fig. 8. Transconductance Fig. 7. Input Admittance 50 160 140 120 TJ = - 40ºC 45 TJ = - 40ºC 25ºC 125ºC 40 g f s - Siemens I D - Amperes 35 100 80 60 25ºC 30 125ºC 25 20 15 40 10 20 5 0 0 3 4 5 6 7 8 9 0 10 20 40 60 VGS - Volts 80 100 120 140 160 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 280 10 9 VDS = 37.5V 240 I D = 40A 8 I G = 10mA 7 V GS - Volts I S - Amperes 200 160 120 6 5 4 3 80 TJ = 125ºC 2 TJ = 25ºC 40 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 1.5 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 1,000 0.1 0.01 Crss f = 1 MHz 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA80N075L2 IXTP80N075L2 IXTH80N075L2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 75ºC @ TC = 25ºC 1000 1000 RDS(on) Limit RDS(on) Limit 25µs 100 100 I D - Amperes 1ms 10 10ms I D - Amperes 25µs 100µs 100µs 1ms 10 100ms 10ms DC TJ = 150ºC TJ = 150ºC 100ms TC = 75ºC Single Pulse TC = 25ºC Single Pulse 1 DC 1 1 10 VDS - Volts © 2013 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: T_80N075L2(6R) 8-16-13 IXTA80N075L2 TO-263 Outline IXTP80N075L2 IXTH80N075L2 TO-247 Outline 1 Pins: 1 - Gate 2,4 - Drain 3 - Source 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-220 Outline Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.