IXTP86N20X4

X4-Class Power MOSFETTM IXTP86N20X4 VDSS ID25 = =  RDS(on) 200V 86A 13m D N-Channel Enhancement Mode Avalanche Rated G TO-220 (IXTP) S G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M 200 200 V V VGS VGSM Continuous Transient 20 30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 86 160 A A IA EAS TC = 25C TC = 25C 43 500 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 300 W -55 ... +175 C 175 C -55 ... +175 C Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C    1.13 / 10 Nm/lb.in 3 g Weight International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Mounting Torque D = Drain Tab = Drain Features  TJ TJM Tstg TL G = Gate S = Source D (Tab)  High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   © 2020 Littelfuse, Inc. 4.5 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA 5 A 300 A TJ = 150C 11 13 m DS101006B(12/20) IXTP86N20X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max. 50 2250 pF 660 pF 185 pF 27 ns VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs S 4.75 Ciss Coss 82 VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthJC 38 ns 76 ns 35 ns 70 nC 20 nC 38 nC 0.50C/W 0.50C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 86 A Repetitive, Pulse Width Limited by TJM 344 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 43A, -di/dt = 100A/µs, 110 0.5 9.4 VR = 100V ns A µC Note 1: Pulse test, t  300s, duty cycle, d 2 % Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 7,157,338B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 IXTP86N20X4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 90 300 VGS = 15V 10V 9V 8V 80 70 VGS = 15V 10V 7V 8V 60 200 I D - Amperes ID - Amperes 9V 250 50 40 6V 30 150 7V 100 20 6V 50 10 5V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 0 5 10 VDS - Volts 90 3.0 V GS = 15V 10V 9V 8V 7V 60 I D - Amperes 25 VGS = 10V 2.6 RDS(on) - Normalized 70 20 Fig. 4. RDS(on) Normalized to ID = 43A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 80 15 VDS - Volts 50 6V 40 30 20 2.2 I D = 86A 1.8 I D = 43A 1.4 1.0 5V 0.6 10 4V 0.2 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 43A Value vs. Drain Current 75 100 125 150 175 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 4.5 VGS = 10V 4.0 BVDSS BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 50 TJ - Degrees Centigrade TJ = 150oC 3.0 2.5 2.0 1.5 TJ = 25o C 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 I D - Amperes © 2020 Littelfuse, Inc. 200 250 300 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTP86N20X4 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 100 120 90 VDS = 10V 100 80 80 I D - Amperes I D - Amperes 70 60 50 40 60 40 30 20 TJ = 150oC 25oC 20 - 40oC 10 0 0 -50 -25 0 25 50 75 100 125 150 3.0 175 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 140 250 V DS = 10V 120 TJ = - 40oC 200 25oC IS - Amperes g f s - Siemens 100 80 60 150oC 150 TJ = 150oC 100 TJ = 25o C 40 50 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.9 1.0 1.1 1.2 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V I D = 43A I G = 10mA 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 0.8 VSD - Volts 6 5 4 3 2 C iss 1,000 C oss 100 C rss 10 1 f = 1 MHz 1 0 0 0 10 20 30 40 50 60 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1,000 IXTP86N20X4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 8 7 RDS(on) Limit 5 I D - Amperes E OSS - MicroJoules 25µs 100 6 4 3 100µs 10 1ms o 2 TJ = 175 C 1 o TC = 25 C Single Pulse 1 0 10ms DC 0.1 0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2020 Littelfuse, Inc. IXYS REF: T_86N20X4(205-S203) 5-7-20 IXTP86N20X4 TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source Littelfuse reserves the right to change limits, test conditions and dimensions. IXTP86N20X4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc.