IXTP8N50P

PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS(on) = 500 = 8 ≤ 0.8 V A Ω Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM Maximum Ratings Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω O BS TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-263 (TO-220) Symbol Test Conditions (TJ = 25° C unless otherwise specified) ±30 ±40 V V 8 14 A A 8 20 400 A mJ mJ 10 V/ns G W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 4 3 (TAB) TO-220 (IXTP) G D S G = Gate S = Source g g (TAB) D = Drain TAB = Drain Features l l l Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 100µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % V 5.5 V ±100 nA 5 50 µA µA 0.8 Ω International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l TJ = 125° C S 1.13/10 Nm/lb.in. BVDSS © 2006 IXYS All rights reserved V V 150 O TC = 25° C 500 500 TO-263 (IXTA) LE ID25 IDM PD TE N-Channel Enhancement Mode Avalanche Rated Easy to mount Space savings High power density DS99321E(03/06) IXTA 8N50P IXTP 8N50P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 5 Ciss Coss 8 S 1050 pF 120 pF 12 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) ns VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 28 ns td(off) RG = 18 Ω (External) 65 ns tf 23 Qg(on) 20 Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 7 Qgd 7 RthJC nC nC nC 0.83° C/W (TO-220) 0.25 Source-Drain Diode ° C/W Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % O BS O Symbol trr ns LE RthCS TE 22 tr TO-263 (IXTA) Outline IF = 8 A, VGS=0V, VR=100V -di/dt = 100 A/µs 8 A 14 A 1.5 V 400 TO-220 (IXTP) Outline ns Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 8N50P IXTP 8N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 8 16 VGS = 10V 7 7V 5 4 6V 3 8V 12 7V I D - Amperes I D - Amperes 6 10 8 6 6V 4 1 TE 2 2 5V 5V 0 0 0 1 2 3 4 5 6 7 V D S - Volts 0 3 6 12 15 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature LE @ 125ºC 3.1 VGS = 10V 7 8V 7V 6 5 6V O 4 3 2 1 O BS 0 2 4 6 8 10 12 2.5 2.2 1.9 I D = 4A 1.3 1 0.4 14 -50 -25 Fig. 5. RDS(on) Norm alized to 3.2 50 75 100 125 150 9 VGS = 10V 8 TJ = 125º C 7 2.4 6 I D - Amperes 2.6 2.2 2 1.8 1.6 1.4 5 4 3 2 TJ = 25º C 1.2 25 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.8 0 TJ - Degrees Centigrade V D S - Volts 3 I D = 8A 1.6 0.7 5V 0 VGS = 10V 2.8 R D S ( o n ) - Normalized 8 R D S ( o n ) - Normalized 9 V D S - Volts Fig. 3. Output Characteristics I D - Amperes VGS = 10V 14 8V 1 1 0.8 0 0 2 4 6 8 10 I D - Amperes © 2006 IXYS All rights reserved 12 14 16 18 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 8N50P IXTP 8N50P Fig. 8. Trans conductance 12 12 10 10 - Siemens 14 8 -40 º C TJ = -40 º C 25 º C 125 º C 8 6 4 TE 4 25 º C fs TJ = 125 º C 6 g I D - Amperes Fig. 7. Input Adm ittance 14 2 2 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 V G S - V olts 4 8 10 12 14 LE Fig. 10. Gate Charge 10 24 V DS = 250V 9 20 V G S - Volts 16 TJ = 125 º C 8 O 12 TJ = 25 º C O BS 4 0 0.4 0.5 0.6 0.7 0.8 0.9 8 I D = 4A 7 I G = 10m A 6 5 4 3 2 1 0 0 1 2 4 6 V S D - V olts Q 8 G 10 12 14 16 18 20 22 - nanoCoulombs Fig. 12. Forw ard-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 10000 100 f = 1MH z R DS(on) Lim it C iss 1000 C oss 100 I D - Amperes Capacitance - picoFarads 6 I D - A mperes Fig. 9. Source Curr e nt vs . Sour ce -To-Drain V oltage I S - Amperes 2 10 25µs 100µs 1m s 1 DC 10m s TJ = 150ºC C rss TC = 25ºC 10 0.1 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTA 8N50P IXTP 8N50P Fig. 13. M axim um Trans ie nt The rm al Re s is tance 0.10 0.001 0.01 TE R ( t h ) J C - ºC / W 1.00 0.1 1 10 O BS O LE Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_8N50P (37) 03-21-06-A.XLS Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.