IXTP8N65X2M

IXTP8N65X2M X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 8A  550m  (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 8 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 4 A EAS TC = 25C 250 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 32 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ G G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0   IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 4A, Note 1   V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications V 5.0 D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features  TL TSOLD DS    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 150 A 550 m DS100668C(10/18) IXTP8N65X2M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 4A, Note 1 4.8 RGi Gate Input Resistance Ciss Coss 8.0 S 6  800 pF 495 pF 2.2 pF 43 129 pF pF 24 ns 28 ns 53 ns 24 ns 12.0 nC 3.1 nC 4.4 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXTP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 4A RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 4A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.90 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 8 A Repetitive, pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/μs 200 1.65 16.3 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP8N65X2M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 18 8 VGS = 10V 8V 7 14 6 6V 7V 12 5 I D - Amperes I D - Amperes VGS = 10V 8V 16 7V 4 3 10 8 6 2 6V 4 1 5V 2 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 8 12 VDS - Volts 8 4.0 VGS = 10V 7V 24 28 32 3.0 RDS(on) - Normalized 6V 5 4 3 VGS = 10V 3.5 6 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 7 16 VDS - Volts 5V I D = 8A 2.5 2.0 I D = 4A 1.5 1.0 2 0.5 1 4V 0.0 0 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current 4.5 100 125 150 Fig. 6. Input Admittance 9 o TJ = 125 C 8 3.5 7 3.0 I D - Amperes RDS(on) - Normalized 75 10 VGS = 10V 4.0 50 TJ - Degrees Centigrade 2.5 o TJ = 25 C 2.0 6 5 o TJ = 125 C 4 o 25 C o 3 1.5 - 40 C 2 1.0 1 0 0.5 0 2 4 6 8 10 12 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 14 16 18 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTP8N65X2M Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 14 25 o TJ = - 40 C 12 20 o 25 C I S - Amperes g f s - Siemens 10 8 o 125 C 6 15 10 o TJ = 125 C 4 o TJ = 25 C 5 2 0 0 1 2 3 4 5 6 7 8 9 10 0 11 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 VSD - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 10000 10 VDS = 325V VGS - Volts 8 Capacitance - PicoFarads I D = 4A I G = 10mA 6 4 Ciss 1000 100 Coss 10 Crss 1 2 f = 1 MHz 0.1 0 0 2 4 6 8 10 1 12 10 100 1000 VDS - Volts QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Output Capacitance Stored Energy 9 100 8 1ms RDS(on) Limit 10 DC 6 I D - Amperes EOSS - MicroJoules 7 5 4 3 2 1s 100ms 100μs 25μs 10ms 1 0.1 o TJ = 150 C 1 o TC = 25 C Single Pulse 0 0 100 200 300 400 500 600 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 1 10 100 VDS - Volts 1,000 IXTP8N65X2M Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_8N65X2M(X2-R2T5) 3-24-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.