IXTP8N70X2M

Preliminary Technical Information IXTP8N70X2M X2-Class Power MOSFET VDSS ID25 RDS(on) = 700V = 8A  550m  (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 700 V VDGR TJ = 25C to 150C, RGS = 1M 700 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 8 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 4 A EAS TC = 25C 250 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 32 W G G = Gate S = Source   C TJM 150 C  Tstg -55 ... +150 C  300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      VGS = 0V, ID = 250μA 700 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 4A, Note 1  V  5.0 V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab High Voltage Package Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications Characteristic Values Min. Typ. Max. BVDSS D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features -55 ... +150 TJ DS    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 10 A 250 A 550 m DS100755B(10/18) IXTP8N70X2M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 4A, Note 1 4.8 RGi Gate Input Resistance Ciss Coss 8.0 S 6  800 pF 495 pF 2.2 pF 43 129 pF pF 24 ns 28 ns 53 ns 24 ns 12.0 nC 3.1 nC 4.4 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXTP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 4A RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 4A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.90 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 8 A Repetitive, pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/μs 200 1.65 16.3 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP8N70X2M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 8 18 VGS = 10V 8V 7 14 6 6V 7V 12 5 I D - Amperes I D - Amperes VGS = 10V 8V 16 7V 4 3 10 8 6 2 6V 4 1 5V 2 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 8 12 VDS - Volts 8 4.0 VGS = 10V 7V 24 28 32 3.0 RDS(on) - Normalized 6V 5 4 3 VGS = 10V 3.5 6 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 7 16 VDS - Volts 5V I D = 8A 2.5 2.0 I D = 4A 1.5 1.0 2 0.5 1 4V 0.0 0 0 4.5 1 2 3 4 5 6 7 8 9 -50 10 25 50 75 100 125 Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 1.2 o BVDSS / VGS(th) - Normalized TJ = 125 C 3.5 RDS(on) - Normalized 0 TJ - Degrees Centigrade VGS = 10V 4.0 -25 VDS - Volts 3.0 2.5 o TJ = 25 C 2.0 1.5 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 2 4 6 8 10 12 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 14 16 18 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTP8N70X2M Fig. 7. Input Admittance Fig. 8. Transconductance 10 14 o TJ = - 40 C 9 12 8 10 g f s - Siemens I D - Amperes 7 6 5 o TJ = 125 C 4 o 25 C o - 40 C 3 o 25 C 8 o 125 C 6 4 2 2 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 4 VGS - Volts 5 6 7 8 9 10 11 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 25 10 20 8 15 6 VGS - Volts I S - Amperes VDS = 350V 10 I D = 4A I G = 10mA 4 o TJ = 125 C o TJ = 25 C 5 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 4 VSD - Volts 6 8 10 12 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 10 10000 9 Ciss 100 8 EOSS - MicroJoules Capacitance - PicoFarads 1000 Coss 10 Crss 1 7 6 5 4 3 2 f = 1 MHz 1 0 0.1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 400 VDS - Volts 500 600 700 IXTP8N70X2M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 100 RDS(on) Limit 10 1s 10ms 1ms 100μs 25μs 1 Z (th)JC - K / W I D - Am peres DC 100ms 1 0.1 0.1 o TJ = 150 C o TC = 25 C Single Pulse 0.01 1 10 100 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 1,000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width - Seconds IXYS REF: T_8N70X2(X2-R2T5) 1-19-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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