IXTP90N075T2

IXTA90N075T2 IXTP90N075T2 TrenchT2TM Power MOSFET VDSS ID25 = 75V = 90A  10m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C, RGS = 1M 75 V VGSM Transient 20 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 90 225 A A IA TC = 25C 50 A EAS TC = 25C 400 mJ PD TC = 25C 180 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C FC Md Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in Weight TO-263 TO-220 2.5 3.0 g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier 175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench Technology for extremely low RDS(on)        Advantages High Power Density Easy to Mount Space Savings   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 75 VGS(th) VDS = VGS, ID = 250A 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 45A, Notes 1 & 2  V Applications 4.0 V             200 nA 2 A 250 A 10 m Automotive Engine Control Synchronous Buck Converter (for Notebook SystemPower & General Purpose Point & Load)  DC/DC Converters  High Current Switching Applications  Power Train Management  Distributed Power Architecture   © 2018 IXYS CORPORATION, All Rights Reserved DS99949C(7/18) IXTA90N075T2 IXTP90N075T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 45A, Note 1 28 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RG = 5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 25A Qgd E 47 S 3290 pF 406 pF 75 pF 14 ns 28 ns 35 ns 20 ns 54 nC 16 nC 11 nC C2 A E1 L1 D1 D 1 2 L2 3 A1 b b2 4 H L3 e c 0.43 [11.0] e 0 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] 0.82 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD trr IRM QRM IF = 45A, VGS = 0V, Note 1 0.92 IF = 45A, VGS = 0V, -di/dt = 100A/s, VR = 38V 90 A 360 A 1.0 TO-220 Outline E A oP A1 V 50 ns 3.7 A 93 nC H1 Q D2 D D1 E1 A2 EJECTOR PIN L1 L ee Notes: 1. Pulse test, t  300s; duty cycle, d  2%. 3X b c e1 e1 3X b2 1 - Gate 2,4 - Drain 3 - Source 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA90N075T2 IXTP90N075T2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 300 90 VGS = 10V VGS = 15V 10V 9V 80 70 8V 250 7V 9V 200 I D - Amperes I D - Amperes 60 50 40 6V 30 8V 150 7V 100 20 6V 50 10 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 2 4 6 8 2.6 90 VGS = 15V 10V 9V 8V 70 14 16 18 20 150 175 VGS = 10V 2.2 RDS(on) - Normalized 7V 60 I D - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 80 10 VDS - Volts VDS - Volts 50 6V 40 30 20 I D = 90A 1.8 I D = 45A 1.4 1.0 5V 10 0 0.6 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current 3.6 25 50 75 100 125 TJ - Degrees Centigrade VDS - Volts Fig. 6. Drain Current vs. Case Temperature 100 90 3.2 70 o TJ = 175 C 2.4 I D - Amperes R DS(on) - Normalized 80 2.8 VGS = 10V 15V 2.0 60 50 40 30 1.6 20 o TJ = 25 C 1.2 10 0.8 0 0 25 50 75 100 125 150 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 175 200 225 250 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA90N075T2 IXTP90N075T2 Fig. 7. Input Admittance 100 Fig. 8. Transconductance 70 o TJ = - 40 C 90 60 80 50 g f s - Siemens I D - Amperes 70 60 50 40 o 30 TJ = 150 C 20 25 C o - 40 C o 25 C 40 o 150 C 30 20 o 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 50 55 Fig. 10. Gate Charge 280 10 240 200 9 VDS = 37.5V 8 I D = 25A I G = 10mA 7 VGS - Volts I S - Amperes 50 I D - Amperes VGS - Volts 160 120 6 5 4 o TJ = 150 C 80 3 2 o TJ = 25 C 40 1 0 0 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 5 10 15 25 30 35 40 45 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 10,000 RDS(on) Limit Ciss - Amperes 1,000 25μs 100μs D Coss 100 I Capacitance - PicoFarads 20 QG - NanoCoulombs VSD - Volts 100 10 1ms Crss o TJ = 175 C o TC = 25 C Single Pulse f = 1 MHz 10 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VD S - Volts 10ms 100 IXTA90N075T2 IXTP90N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 32 30 30 RG = 5Ω , VGS = 10V o TJ = 25 C 28 VDS = 37V t r - Nanoseconds t r - Nanoseconds 28 26 24 I D = 25A 22 20 26 RG = 5Ω , VGS = 10V VDS = 37V 24 22 I D = 50A o 20 18 16 TJ = 125 C 18 25 35 45 55 65 75 85 95 105 115 125 24 26 28 30 32 34 TJ - Degrees Centigrade 70 td(on) 22 I D = 50A, 25A 30 18 20 14 10 10 12 14 16 18 35 I D = 25A 20 30 I D = 50A 25 35 45 55 td(off) tf 21 35 o TJ = 25 C 30 o TJ = 125 C 19 25 18 20 t f - Nanoseconds 40 17 15 32 34 36 38 20 125 90 td(off) 80 TJ = 125 C, VGS = 10V I D = 50A VDS = 37V 50 40 42 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 44 46 48 50 70 45 60 40 50 35 40 30 30 I D = 25A 25 30 115 20 20 10 15 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d ( o f f ) - Nanoseconds 22 28 105 o 55 45 VDS = 37V 26 95 100 60 50 RG = 5Ω, VGS = 10V 24 85 65 t d ( o f f ) - Nanoseconds t f - Nanoseconds 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 55 20 65 TJ - Degrees Centigrade 25 23 25 18 20 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 50 40 21 RG - Ohms 24 48 td(off) RG = 5Ω, VGS = 10V 19 10 8 46 VDS = 37V t f - Nanoseconds t r - Nanoseconds 40 6 44 t d ( o f f ) - Nanoseconds 26 I D = 50A, 25A 22 t d ( o n ) - Nanoseconds VDS = 37V 4 42 45 tf 30 o TJ = 125 C, VGS = 10V 50 40 23 34 tr 38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 60 36 I D - Amperes IXTA90N075T2 IXTP90N075T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_90N075T2 (V3) 7-10-18-C