IXTP98N075T

Advance Technical Information TrenchMVTM Power MOSFET IXTA98N075T IXTP98N075T VDSS ID25 = = RDS(on) ≤ 75 V 98 A Ω 10 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 75 V VGSM Transient ± 20 V ID25 TC = 25°C 98 A ILRMS Package Current Limit (RMS): 75 A IDM TC = 25°C, pulse width limited by TJM 280 A dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω 5 V/ns TC = 25°C 25 A EAS TC = 25°C 600 mJ Pd TC = 25°C 230 W -55 ... +175 °C TJ TJM 175 °C Tstg -40 ... +175 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque (TO-220) Weight TO-220 TO-263 1.13 / 10 Nm/lb.in. 3.0 2.5 BVDSS VGS = 0 V, ID = 250 μA 75 VGS(th) VDS = VGS, ID = 100 μA 2.0 IGSS VGS = ±20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) g g Characteristic Values Min. Typ. Max. TJ = 150°C VGS = 10 V, ID = 25 A, Notes 1, 2 TAB G S TO-220 (IXTP) TAB G IAR Symbol Test Conditions (TJ = 25°C unless otherwise specified) TO-263 (IXTA) V 4.0 V ± 200 nA 2 150 μA μA 10 mΩ S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99541(04/07) © 2007 IXYS CORPORATION, All rights reserved IXTA98N075T IXTP98N075T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10 V; ID = 0.5 ID25, Note 1 38 Ciss Coss TO-263 (IXTA) Outline 64 S 3100 pF 520 pF 125 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) Resistive Switching Times 20 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 42 ns td(off) RG = 5 Ω (External) 42 ns 27 ns tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd nC 18 nC Dim. Millimeter Min. Max. Inches Min. Max. 15 nC A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 0.65°C/W b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 °C/W c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 0.50 Source-Drain Diode Symbol Test ConditionsCharacteristic Values (TJ = 25°C unless otherwise specified) Min. 2 - Drain 4, TAB - Drain 68 RthJC RthCS Pins: 1 - Gate 3 - Source Typ. Max. IS VGS = 0 V 98 A ISM Repetitive 280 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 49 A, -di/dt = 100 A/μs TO-220 (IXTP) Outline 50 ns VR = 40 V, VGS = 0 V Note 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location is 5 mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.