IXTQ10P50P

PolarPTM Power MOSFET IXTA10P50P IXTP10P50P IXTQ10P50P IXTH10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) VDSS ID25 RDS(on) G D (Tab) G D DS D (Tab) Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 500 V VDGR TJ = 25C to 150C, RGS = 1M - 500 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C - 10 A IDM TC = 25C, Pulse Width Limited by TJM - 30 A IA EAS TC = 25C TC = 25C - 10 1.5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in 2.5 3.0 5.5 6.0 g g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-3P,TO-220 & TO-247) Weight TO-263 TO-220 TO-3P TO-247 G Characteristic Values Min. Typ. Max. D S D (Tab) D = Drain Tab = Drain Features      International Standard Packages Avalanche Rated Rugged PolarPTM Process Low Package Inductance Fast Intrinsic Diode Advantages   Easy to Mount Space Savings High Power Density Applications BVDSS VGS = 0V, ID = - 250A - 500 VGS(th) VDS = VGS, ID = - 250A - 2.0 V IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V - 10 A - 250 A RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1  © 2015 IXYS CORPORATION, All Rights Reserved D (Tab) G = Gate S = Source  TJ = 125C S TO-247 (IXTH) Symbol Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) - 500V - 10A  1 TO-3P (IXTQ) TO-220AB (IXTP) G S = =  - 4.5 1 V     High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators  DS99911D(2/15) IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 6.5 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss 11 S 2840 pF 275 pF 42 pF 20 ns 28 ns 52 ns 44 ns 50 nC 17 nC 18 nC VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 3.3 (External) tf Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd 0.42 C/W RthJC RthCS (TO-3P & TO-247) 0.25 C/W (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 10 A ISM Repetitive, Pulse Width Limited by TJM - 40 A VSD IF = - 5A, VGS = 0V, Note 1 -3 V trr QRM IRM IF = - 5A, -di/dt = -100A/s Note 414 5.90 - 28.6 VR = -100V, VGS = 0V 1: ns C A Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC -10 -26 VGS = -10V - 7V -9 VGS = -10V - 8V -22 -8 -18 I D - Amperes I D - Amperes -7 - 6V -6 -5 -4 - 7V -14 - 6V -10 -3 -2 -6 - 5V - 5V -1 -2 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 0 -4 -8 -12 -16 -20 -24 -28 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = - 5A Value vs. Junction Temperature -32 2.6 -10 VGS = -10V - 7V -9 VGS = -10V 2.2 RDS(on) - Normalized I D - Amperes -8 -7 - 6V -6 -5 -4 -3 - 5V -2 1.8 I D = -10A I D = - 5A 1.4 1.0 0.6 -1 0 0.2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = - 5A Value vs. Drain Current 2.4 2.2 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature -11 VGS = -10V -9 TJ = 125ºC 2.0 1.8 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.6 1.4 -7 -5 -3 1.2 TJ = 25ºC 1.0 -1 0.8 -2 -6 -10 -14 -18 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved -22 -26 -50 -25 0 25 50 75 Tc - Degrees Centigrade 100 IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Fig. 7. Input Admittance Fig. 8. Transconductance 24 -16 TJ = - 40ºC -14 20 -12 -8 g f s - Siemens I D - Amperes 16 -10 TJ = 125ºC 25ºC - 40ºC -6 25ºC 12 125ºC 8 -4 4 -2 0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -2 -4 -6 VGS - Volts -8 -10 -12 -14 -16 -18 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -30 -10 -25 -9 VDS = - 250V -8 I D = - 5A I G = -1mA -7 VGS - Volts I S - Amperes -20 -15 TJ = 125ºC -6 -5 -4 -10 -3 TJ = 25ºC -2 -5 -1 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0 -3.5 5 10 15 20 25 30 35 40 45 50 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 - 100 Capacitance - PicoFarads f = 1 MHz RDS(on) Limit 25µs C iss 1,000 - 10 I D - Amperes 100µs Coss 100 1ms 10ms -1 DC 100ms TJ = 150ºC TC = 25ºC Single Pulse Crss - 0.1 10 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -10 - 100 VDS - Volts - 1000 IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved 1 10 IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P TO-263 (IXTA) Outline TO-247 (IXTH) Outline P 1 2 3 e Terminals: 1 - Gate Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 1 - Gate Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 TO-3P (IXTQ) Outline TO-220 (IXTP) Outline Pins: 2 - Drain 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_10P50P(B5)5-21-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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