IXTQ130N15T

Preliminary Technical Information TrenchHVTM Power MOSFET IXTH130N15T IXTQ130N15T VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 150 V = 130 A Ω ≤ 12 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 150 150 V V VGSM Transient ± 30 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 130 75 330 A A A IAR EAS TC = 25°C TC = 25°C 5 1.2 A J dv/dt IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω 3 V/ns PD TC = 25°C 750 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 g g G D (TAB) S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages Easy to mount z Space savings z High power density z Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 1 mA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values Min. Typ. Max. 150 V 2.5 TJ = 150°C VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 10 4.5 V ± 200 nA 5 250 μA μA 12 mΩ DS99796 (02/07) © 2007 IXYS CORPORATION, All rights reserved IXTH130N15T IXTQ130N15T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 60 100 S 9800 pF 1450 pF 320 pF Ciss Coss TO-247AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. td(on) Resistive Switching Times 23 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 16 ns td(off) RG = 2.5 Ω (External) 57 ns 27 ns 113 nC 32 nC 31 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.20 °C/W RthCS 0.25 °C/W Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 130 A ISM Pulse width limited by TJM 330 A VSD IF = 50 A, VGS = 0 V, Note 1 1.2 V t rr IF = 50 A, -di/dt = 100 A/μs 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline 100 ns VR = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 7,005,734 B2 7,157,338B2 7,063,975 B2 7,071,537 IXTH130N15T IXTQ130N15T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 130 300 VGS = 10V V GS = 10V 9V 8V 120 110 9V 250 8V 100 7V 200 80 I D - Amperes I D - Amperes 90 70 6V 60 50 40 7V 150 100 30 6V 50 20 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 2 4 6 10 12 14 16 Fig. 4. RDS(on) Normalized to ID = 65A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 3.4 130 V GS = 10V 120 9V 8V 110 V GS = 10V 3.0 7V 100 RDS(on) - Normalized 2.6 90 I D - Amperes 8 VDS - Volts VDS - Volts 6V 80 70 60 50 40 I D = 130A 2.2 I D = 65A 1.8 1.4 1.0 30 5V 20 0.6 10 0 0.2 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 65A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 4.5 90 V GS = 10V 15V - - - - 4 TJ = 175ºC External Lead Current Limit 80 70 3.5 60 I D - Amperes RDS(on) - Normalized 25 T J - Degrees Centigrade 3 2.5 2 50 40 30 1.5 20 TJ = 25ºC 1 10 0 0.5 0 50 100 150 200 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 175 IXTH130N15T IXTQ130N15T Fig. 8. Transconductance Fig. 7. Input Admittance 180 160 160 140 TJ = - 40ºC 120 120 g f s - Siemens ID - Amperes 140 100 80 TJ = 150ºC 25ºC - 40ºC 60 25ºC 100 80 150ºC 60 40 40 20 20 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 300 10 VDS = 75V 9 I D = 25A 250 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 100 I D - Amperes 150 100 TJ = 150ºC 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 40 60 80 100 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 120 1.00 C iss Z(th)JC - ºC / W Capacitance - PicoFarads 20 VSD - Volts 1,000 C oss f = 1 MHz C rss 100 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH130N15T IXTQ130N15T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 17 18 RG = 2.5Ω 17 16 V GS = 15V TJ = 25ºC 16 t r - Nanoseconds t r - Nanoseconds V DS = 75V 65A < I D < 130A 15 14 RG = 2.5Ω 15 VGS = 15V VDS = 75V 14 13 13 12 12 TJ = 125ºC 11 11 25 35 45 55 65 75 85 95 105 115 60 125 70 80 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance I D = 65A I D = 130A 26 17 25 15 24 13 11 3 4 5 6 7 8 9 V DS = 75V 26 t f - Nanoseconds 27 24 65 22 60 20 55 I D = 130A 18 50 23 16 45 22 14 25 10 35 45 55 28 TJ = 125ºC td(off) - - - - TJ = 25ºC 52 RG = 2.5Ω, V GS = 15V V DS = 75V 48 16 44 TJ = 125ºC 14 80 90 100 110 I D - Amperes © 2007 IXYS CORPORATION, All rights reserved 120 40 130 t f - Nanoseconds t f - Nanoseconds 56 70 95 105 115 40 125 220 55 tf 50 TJ = 125ºC, V GS = 15V 200 td(off) - - - - 180 VDS = 75V 45 160 40 140 35 120 I D = 65A, 130A 30 100 25 80 20 60 15 40 10 t d ( o f f ) - Nanoseconds 22 t d ( o f f ) - Nanoseconds 60 TJ = 25ºC 60 85 60 64 24 18 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 68 tf 65 T J - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 20 70 I D = 65A RG - Ohms 26 75 RG = 2.5Ω, V GS = 15V t d ( o f f ) - Nanoseconds V DS = 75V 2 130 80 28 28 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - 19 120 td(off) - - - - tf TJ = 125ºC, V GS = 15V 21 110 30 29 tr 100 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 25 23 90 I D - Amperes T J - Degrees Centigrade 20 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_130N15T (7W) 01-31-07.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.