IXTQ160N075T

Preliminary Technical Information IXTH160N075T IXTQ160N075T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 75 V = 160 A Ω ≤ 6.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 75 75 V V Transient ± 20 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 160 75 430 A A A IAR EAS TC = 25°C TC = 25°C 25 750 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS 3 V/ns 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TO-247 (IXTH) G D (TAB) D S TO-3P (IXTQ) TJ ≤ 175°C, RG = 5 Ω PD TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-3P, TO-220) Weight TO-3P TO-247 g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 75 VGS(th) VDS = VGS, ID = 250 μA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) V TJ = 150°C VGS = 10 V, ID = 25 A, Notes 1, 2 D S G = Gate S = Source D = Drain TAB = Drain 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25°C unless otherwise specified) D (TAB) G 4.8 4.0 V ± 200 nA 5 250 μA μA 6.0 mΩ Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99690 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTH160N075T IXTQ160N075T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 65 100 S 4950 pF Ciss Coss TO-247 AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz C rss Max. 790 pF 145 pF 29 ns td(on) Resistibve Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 64 ns td(off) RG = 5 Ω (External) 60 ns 60 ns 112 nC 30 nC 30 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd RthJC 1 0.25 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC °C/W Characteristic Values Min. Typ. Max. IS VGS = 0 V 160 A ISM Pulse width limited by TJM 430 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/μs 80 ns 2 - Drain Tab - Drain Dim. Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) 3 Terminals: 1 - Gate 3 - Source 0.42°C/W RthCH 2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARYTECHNICALINFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTH160N075T IXTQ160N075T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 280 160 VGS = 10V 9V 8V 7V 140 7V 200 I D - Amperes I D - Amperes 120 VGS = 10V 9V 8V 240 100 80 6V 60 160 6V 120 80 40 5V 40 20 0 5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 4 5 6 Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 160 2.6 V GS = 10V 9V 8V 7V 120 2.2 100 80 VGS = 10V 2.4 RDS(on) - Normalized 140 I D - Amperes 3 VDS - Volts VDS - Volts 6V 60 5V 2.0 1.8 I D = 160A 1.6 1.4 I D = 80A 1.2 40 1.0 20 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 2.8 140 VGS = 10V 15V - - - - 2.6 External Lead Current Limit for TO-263 (7-Lead) TJ = 175ºC 120 2.4 2.2 100 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2 1.8 1.6 1.4 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 40 1.2 1 20 TJ = 25ºC 0.8 0 0.6 0 50 100 150 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH160N075T IXTQ160N075T Fig. 8. Transconductance Fig. 7. Input Admittance 270 140 TJ = - 40ºC 240 TJ = -40ºC 25ºC 150ºC 210 25ºC 100 180 g f s - Siemens ID - Amperes 120 150 120 80 150ºC 60 90 40 60 20 30 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 7 50 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 Fig. 10. Gate Charge 270 10 240 9 V DS = 37V I D = 25A 8 210 I G = 10mA 7 180 VGS - Volts I S - Amperes 150 I D - Amperes 150 120 TJ = 150ºC 90 6 5 4 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 C iss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 C oss 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH160N075T IXTQ160N075T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 80 70 RG = 5Ω 65 VGS = 10V 60 VDS = 38V 70 TJ = 25ºC t r - Nanoseconds t r - Nanoseconds 75 55 50 45 40 I D = 50A 35 RG = 5Ω V GS = 10V 50 V DS = 38V 40 30 I D = 25A 30 60 TJ = 125ºC 25 20 20 15 10 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade td(on) - - - - 62 85 40 60 82 38 58 70 36 60 34 I D = 50A t f - Nanoseconds t r - Nanoseconds I D = 25A t d ( o n ) - Nanoseconds VDS = 38V 56 40 30 30 28 20 26 24 42 6 8 10 12 14 16 18 RG = 5Ω, VGS = 10V 76 67 I D = 50A 48 64 46 61 44 58 25 20 35 90 T J = 125ºC 50 66 46 T J = 125ºC 42 30 35 115 55 125 40 45 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 50 210 190 VDS = 38V 100 170 I D = 25A 90 150 I D = 50A 80 130 70 110 58 60 90 54 50 70 50 40 62 T J = 25ºC 25 105 230 110 t f - Nanoseconds t f - Nanoseconds 74 T J = 25ºC 70 44 95 t d ( o f f ) - Nanoseconds 78 52 48 85 TJ = 125ºC, VGS = 10V t d ( o f f ) - Nanoseconds td(off) - - - - V DS = 38V 75 td(off) - - - - tf 120 82 RG = 5Ω, V GS = 10V 65 130 86 58 54 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 62 tf 45 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 56 70 50 RG - Ohms 60 73 I D = 25A 52 32 4 79 VDS = 38V 54 50 10 td(off) - - - - tf t d ( o f f ) - Nanoseconds 42 TJ = 125ºC, V GS = 10V 80 50 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 100 tr 45 I D - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 40 50 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_160N075T (4V) 6-16-06.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.