IXTQ160N085T

Advance Technical Information IXTQ 160N085T IXTA 160N085T IXTP 160N085T Trench Gate Power MOSFET VDSS ID25 = 85 V = 160 A Ω = 6.0 mΩ RDS(on) N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 85 85 V V ±20 V 160 75 350 A A A G D TO-220 (IXTP) ID25 IDRMS IDM TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM IAR TC = 25°C 75 A EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 3 V/ns PD TC = 25°C 360 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C G TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) 1.13/10 Nm/lb.in. 5.5 4 3 g g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 85 VGS(th) VDS = VGS, ID = 1 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V G © 2005 IXYS All rights reserved S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages V z TJ = 125°C VGS = 10 V, ID = 50 A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % (TAB) D S TO-263 (IXTA) z RDS(on) (TAB) S 5.0 4.0 V ±200 nA 25 250 µA µA 6.0 mΩ z z Easy to mount Space savings High power density DS99347(02/05) IXTA 160N085T IXTP 160N085T IXTQ 160N085T Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 50A, pulse test 64 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 85 S 6400 pF 927 pF 92 pF Crss td(on) 37 ns tr VGS = 10 V, VDS = 60 V, ID = 35A 61 ns td(off) RG = 5 Ω (External) 65 ns 36 ns 164 nC 48 nC 45 nC tf Qg(on) VGS= 10 V, VDS = 40 V, ID = 80 A Qgs Qgd RthJC RthCK TO-3P (IXTQ) Outline 0.42 K/W (TO-3P) (TO-220) 0.21 0.25 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 160 A ISM Repetitive 350 A VSD IF = 50 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.2 V t rr IF = 25 A, -di/dt = 100 A/µs QRM VR = 25 V, VGS = 0 V 100 ns 0.6 µC TO-220 (IXTP) Outline TO-263 (IXTA) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 2 - Drain 4 - Drain IXTA 160N085T Fig. 1. Output Characteristics @ 25° C Fig. 2. Extended Output Characteristics @ 25° C 160 320 VGS = 10V 9V 8V 7V 140 6V 7V VGS = 10V 280 9V 8V 240 6V I D - Amperes I D - Amperes 120 100 5V 80 60 40 200 160 5V 120 80 20 4V 40 4V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 V D S - Volts 2.5 3 3.5 4 Fig. 4. RDS(on) Norm alized to ID = 50A Value vs. Junction Tem perature 2.4 160 VGS = 10V 9V 8V 7V 120 VGS = 10V 2.2 R D S ( o n ) - Normalized 140 I D - Amperes 2 V D S - Volts Fig. 3. Output Characteristics @ 150° C 6V 100 5V 80 60 4V 40 20 2 1.8 I D = 100A 1.6 1.4 I D = 50A 1.2 1 0.8 3V 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 2 -25 0 V D S - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID = 50A Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 2.6 90 TJ = 175°C 2.4 2.2 70 2 60 1.8 VGS = 10V 1.6 15V External Lead Current Limit 80 I D - Amperes R D S ( o n ) - Normalized IXTP 160N085T IXTQ 160N085T ---- 1.4 TJ = 25°C 1.2 50 40 30 20 1 10 0.8 0 0 40 80 120 160 200 I D - Amperes © 2005 IXYS All rights reserved 240 280 320 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTA 160N085T IXTP 160N085T IXTQ 160N085T Fig. 8. Transconductance Fig. 7. Input Adm ittance 240 140 TJ = -40ºC 200 120 25ºC 100 g f s - Siemens I D - Amperes 150ºC 160 120 80 TJ = -40ºC 25ºC 80 150ºC 60 40 40 20 0 0 2.5 3 3.5 4 4.5 5 5.5 6 0 40 80 120 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 200 240 280 150 175 Fig. 10. Gate Charge 10 300 9 250 VDS = 42.5V I D = 80A 8 I G = 10mA 7 200 VG S - Volts I S - Amperes 160 I D - Amperes 150 100 6 5 4 3 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 V S D - Volts 25 50 75 100 125 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 TJ = 175ºC TC = 25ºC R DS(on) Limit I D - Amperes Capacitance - picoFarads C iss 1000 C oss 25µs 100 100µs 100 1ms C rss f = 1MHz 10ms DC 10 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - Volts 1000 IXTA 160N085T IXTP 160N085T IXTQ 160N085T Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds © 2005 IXYS All rights reserved 100 1000