IXTQ182N055T

Preliminary Technical Information IXTH182N055T IXTQ182N055T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 55 V = 182 A ≤ 5.0 m Ω TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM 55 55 V V Transient ± 20 V ID25 ILRMS IDM TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM 182 75 490 A A A IAR E AS TC = 25° C TC = 25° C 25 1.0 A J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 5 Ω 3 V/ns PD TC = 25° C 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C G TO-3P (IXTQ) S G TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 55 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID =25 A, Notes 1, 2 V TJ = 150° C 3.5 4.0 V ± 200 nA 5 250 µA µA 5.0 mΩ (TAB) D D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS99682 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTH182N055T IXTQ182N055T Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 65 100 S 4850 pF Ciss Coss TO-247AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. 954 pF 212 pF 36 ns td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 35 ns td(off) RG = 5 Ω (External) 53 ns 38 ns 114 nC 30 nC 32 nC tf Qg(on) Qgs VGS= 10 V, VDS = 30 V, ID = 25 A Qgd TO-3P Min. Characteristic Values Typ. Max. IS VGS = 0 V 182 A ISM Pulse width limited by TJM 490 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/µs 70 ns 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) 3 Dim. °C/W 0.25 2 Terminals: 1 - Gate 3 - Source 0.42 °C/W RthJC RthCS 1 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTH182N055T IXTQ182N055T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 320 VGS = 10V 9V 8V 180 160 280 8V 240 120 ID - Amperes 140 ID - Amperes VGS = 10V 9V 7V 100 80 6V 200 7V 160 120 6V 60 80 40 5V 20 40 0 5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 4 5 6 Fig. 4. RDS(on) Normalized to ID = 91A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 200 2.2 VGS = 10V 9V 8V 160 140 120 7V 100 80 VGS = 10V 2.0 RDS(on) - Normalized 180 ID - Amperes 3 VDS - Volts VDS - Volts 6V 60 1.8 1.6 I D = 182A 1.4 I D = 91A 1.2 1.0 40 0.8 5V 20 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 91A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.4 140 VGS = 10V 15V - - - - 2.2 External Lead Current Limit for TO-263 (7-Lead) 120 TJ = 175ºC 100 1.8 ID - Amperes RDS(on) - Normalized 2 1.6 1.4 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 1.2 40 1 0.8 20 TJ = 25ºC 0 0.6 0 40 80 120 160 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 240 280 320 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH182N055T IXTQ182N055T Fig. 8. Transconductance Fig. 7. Input Admittance 140 270 240 210 TJ = -40ºC 25ºC 125ºC 180 25ºC 100 g f s - Siemens ID - Amperes TJ = - 40ºC 120 150 120 80 150ºC 60 90 40 60 20 30 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 7.5 30 60 90 VGS - Volts 120 150 180 210 240 270 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 270 9 VDS = 27.5V 240 8 I D = 25A 210 7 VGS - Volts IS - Amperes I G = 10mA 180 150 TJ = 150ºC 120 TJ = 25ºC 90 6 5 4 3 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 VSD - Volts 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 10,000 f = 1 MHz RDS(on) Limit @ VGS = 10V C iss I D - Amperes Capacitance - PicoFarads 30 1,000 C oss 25µs 100 100µs 1ms TJ = 175ºC C rss DC 10ms TC = 25ºC 100 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 VDS - Volts 100 IXTH182N055T IXTQ182N055T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 38 36 RG = 5Ω 36 VGS = 10V VDS = 30V 32 30 I D = 50A 28 26 TJ = 25ºC 34 t r - Nanoseconds t r - Nanoseconds 34 I D = 25A RG = 5Ω 32 VGS = 10V VDS = 30V 30 28 26 TJ = 125ºC 24 24 22 22 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 50 58 I D = 50A 48 54 I D = 25A 46 60 38 40 34 36 30 34 8 10 12 14 16 18 62 40 59 I D = 50A 38 25 20 35 tf 180 RG = 5Ω, VGS = 10V 70 160 95 50 105 115 125 175 58 38 54 TJ = 25ºC 34 44 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 48 I D = 25A 140 t f - Nanoseconds 40 40 200 150 120 125 100 100 I D = 50A 80 75 50 60 50 46 40 25 4 6 8 10 12 RG - Ohms 14 16 18 20 t d ( o f f ) - Nanoseconds 62 36 85 VDS = 30V 42 32 75 TJ = 125ºC, VGS = 10V VDS = 30V 66 28 65 td(off) - - - - tf t d ( o f f ) - Nanoseconds t f - Nanoseconds 74 td(off) - - - - 44 24 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 48 36 45 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current TJ = 125ºC 56 53 RG - Ohms 46 65 I D = 25A 42 42 6 68 44 80 20 VDS = 30V 46 t f - Nanoseconds t r - Nanoseconds 50 t d ( o n ) - Nanoseconds 120 71 RG = 5Ω, VGS = 10V t d ( o f f ) - Nanoseconds VDS = 30V 4 td(off) - - - - tf 100 50 74 td(on) - - - - TJ = 125ºC, VGS = 10V 140 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 160 tr 40 I D - Amperes IXTH182N055T IXTQ182N055T Fig. 19. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_182N055T (4V) 6-01-06-A.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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