IXTQ18N60P

IXTQ 18N60P IXTV 18N60P IXTV 18N60PS PolarHVTM Power MOSFET VDSS = 600 V ID25 = 18 A Ω RDS(on) ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±30 V VGSM Tranisent ±40 V ID25 TC = 25°C 18 A IDM TC = 25°C, pulse width limited by TJM 54 A IAR TC = 25°C 18 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω 10 V/ns PD TC = 25°C 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P PLUS220 & PLUS220SMD (TO-3P) D G S G = Gate S = Source g g z 5.5 V z ±100 nA 25 250 μA μA 420 mΩ VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V z D (TAB) D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z © 2006 IXYS All rights reserved D (TAB) S PLUS220SMD (IXTV...S) V 600 VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % PLUS220 (IXTV) Features VGS = 0 V, ID = 250 μA RDS(on) D (TAB) S Characteristic Values Min. Typ. Max. BVDSS TJ = 125°C D 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) G G TJ TJM Tstg TL TSOLD TO-3P (IXTQ) Easy to mount Space savings High power density DS99324E(03/06) IXTQ 18N60P IXTV 18N60P IXTV 18N60PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 16 S 2500 pF 278 pF Crss 23 pF td(on) 21 ns Ciss Coss 9 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 5 Ω (External) 62 ns tf 22 ns Qg(on) 49 nC 15 nC 17 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS 0.35 (TO-3P, PLUS220) Source-Drain Diode °C/W °C/W 0.21 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 18 A ISM Repetitive 54 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % IF = 18A, -di/dt = 100 A/μs VR = 100V 1.5 V trr TO-3P (IXTQ) Outline 500 PLUS220 (IXTV) Outline ns PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 6,710,405B2 6,759,692 6,710,463 6,771,478 B2 IXTQ 18N60P IXTV 18N60P IXTV 18N60PS Fig. 1. Output Characteristics Fig. 2. Output Characteristics @ 25ºC @ 125ºC 40 18 35 8V 7V 8V 7V 30 12 I D - Amperes 14 I D - Amperes VGS = 10V VGS = 10V 16 6V 10 8 6 5V 4 25 20 6V 15 10 5V 5 2 0 0 0 1 2 3 4 5 6 7 8 0 3 6 9 V D S - Volts Fig. 3. Output Characteristics 18 21 24 27 30 3.1 18 VGS = 10V 16 R D S ( o n ) - Normalized 12 6V 10 8 5V 6 4 2.5 2.2 I D = 18A 1.9 1.6 1 0.7 0 0.4 2 4 6 8 10 12 14 16 I D = 9A 1.3 2 0 VGS = 10V 2.8 7V 14 I D - Amperes 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC -50 18 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade V D S - Volts Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.2 20 3 18 VGS = 10V TJ = 125º C 2.8 16 2.6 14 2.4 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts 2.2 2 1.8 1.6 12 10 8 6 1.4 4 1.2 TJ = 25º C 1 2 0.8 0 0 5 10 15 20 25 I D - Amperes © 2006 IXYS All rights reserved 30 35 40 45 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTQ 18N60P IXTV 18N60P IXTV 18N60PS Fig. 8. Transconductance 30 27 27 24 24 21 21 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 18 15 TJ = 125º C 12 25º C 9 TJ = -40º C 25º C 125º C 18 15 12 9 -40º C 6 6 3 3 0 0 3.5 4 4.5 5 5.5 6 0 6.5 3 6 9 Fig. 9. Source Current vs. Source-To-Drain Voltage 15 18 21 24 27 30 40 45 50 Fig. 10. Gate Charge 10 60 50 40 VG S - Volts I S - Amperes 12 I D - Amperes V G S - Volts 30 TJ = 125º C 20 9 VDS = 300V 8 I D = 9A 7 I G = 10mA 6 5 4 3 TJ = 25º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 5 10 V S D - Volts 15 20 25 30 35 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 f = 1MHz R DS(on) Limit I D - Amperes Capacitance - picoFarads C iss 1000 C oss 25µs 100µs 10 1ms 100 C rss TJ = 150ºC 10ms DC TC = 25ºC 10 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTQ 18N60P IXTV 18N60P IXTV 18N60PS Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.