IXTQ26N60P

PolarHVTM Power MOSFET IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A Ω RDS(on) ≤ 270 mΩ TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 26 A IDM TC = 25°C, pulse width limited by TJM 65 A IAR TC = 25°C 13 A EAR TC = 25°C 40 mJ EAS TC = 25°C 1.2 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 10 V/ns 460 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C D S TO-3P (IXTQ) G D S D (TAB) TO-268 (IXTT) G S D (TAB) TJ ≤ 150°C, RG = 5 Ω PD TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-3P&TO-247) FC Mounting force (PLUS220) Weight TO-3P TO-247 TO-268 PLUS220 & PLUS220SMD Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 11..65/2.5..15 N/lb 5.5 6.0 5.0 4.0 g g g g BVDSS VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 250 μA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved G D D (TAB) S PLUS220SMD (IXTV_S) 1.13/10 Nm/lb.in. Characteristic Values Min. Typ. Max. TJ = 125°C PLUS220 (IXTV) V 5.0 V ±100 nA 10 250 μA μA 270 mΩ G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99376E(12/06) IXTT26N60P Symbol Test Conditions gfs VDS = 20 V; ID = 0.5 ID25, pulse test IXTH26N60P IXTQ26N60P IXTV26N60P IXTV26N60PS Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 16 26 S 4150 pF 400 pF Crss 27 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25, ID = 0.5 ID25 27 ns td(off) RG = 5 Ω (External) 75 ns tf 21 ns Qg(on) 72 nC 27 nC 24 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.27 °C/W RthJC RthCS TO-3P, PLUS220 & TO-247 Source-Drain Diode °C/W 0.21 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 78 A VSD IF = IS, VGS = 0 V, pulse test 1.5 V trr IF = 26A, -di/dt = 100 A/μs 500 n Characteristic Curves Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 60 VGS = 10V 24 VGS = 10V 54 7V 7V 48 20 I D - Amperes I D - Amperes 42 16 6V 12 8 6V 36 30 24 18 12 4 5V 6 5V 0 0 0 1 2 3 4 5 6 7 0 3 6 V D S - Volts 9 12 15 18 21 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 24 27 30 IXTH26N60P IXTQ26N60P IXTV26N60P IXTV26N60PS IXTT26N60P Fig. 3. Output Characte ris tics Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem pe rature @ 125º C 3.2 24 VGS = 10V R D S ( o n ) - Normalized I D - Amperes 20 16 6V 12 8 5V 4 VGS = 10V 2.8 7V 2.4 2 I D = 26A 1.6 I D = 13A 1.2 0.8 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 V D S - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Te m perature Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . ID 30 3.2 VGS = 10V 27 TJ = 125º C 2.8 R D S ( o n ) - Normalized 25 24 21 I D - Amperes 2.4 2 1.6 18 15 12 9 6 TJ = 25º C 1.2 3 0 0.8 0 10 20 30 40 50 -50 60 -25 0 I D - Amperes 50 45 45 40 40 35 35 g f s - Siemens I D - Amperes 50 30 25 TJ = 125º C 25º C 15 50 75 100 125 150 Fig. 8. Transconductance Fig. 7. Input Adm ittance 20 25 TC - Degrees Centigrade -40º C TJ = -40º C 25º C 125º C 30 25 20 15 10 10 5 5 0 0 4 4.5 5 5.5 6 V G S - Volts © 2006 IXYS All rights reserved 6.5 7 7.5 0 5 10 15 20 25 30 I D - Amperes 35 40 45 50 IXTT26N60P IXTH26N60P IXTQ26N60P IXTV26N60P IXTV26N60PS Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 80 10 70 9 VDS = 300V 8 I D = 13A 7 I G = 10mA 50 VG S - Volts I S - Amperes 60 40 30 TJ = 125º C 6 5 4 3 20 TJ = 25º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 V S D - Volts 30 40 50 60 70 80 Q G - nanoCoulombs Fig. 11. Capacitance 10000 Capacitance - picoFarads f = 1MHz C iss 1000 C oss 100 C rss 10 0 5 10 15 20 25 30 35 40 V D S - Volts Fig. 12. M axim um Trans ie nt The rm al Re s is tance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXTT26N60P TO-3P (IXTQ) Outline TO-247 (IXTH) Outline 1 2 3 Terminals: 1 - Gate Dim. IXTH26N60P IXTQ26N60P IXTV26N60P IXTV26N60PS Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved PLUS220SMD (IXFV_S) Outline TO-268 (IXTT) Outline Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.