IXTQ30N60L2

Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 VDSS ID25 = 600V = 30A ≤ 240mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 30 A IDM TC = 25°C, pulse width limited by TJM 80 A IA TC = 25°C 30 A EAS TC = 25°C 2 J PD TC = 25°C 540 W -55 to +150 °C TJ TJM +150 °C Tstg -55 to +150 °C TL 1.6mm (0.063in) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247&TO-3P) 1.13/10 Nm/lb.in. Weight TO-247 TO-3P TO-268 6.0 5.5 4.0 g g g (TAB) TO-3P G D S (TAB) TO-268 G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) z Characteristic Values Min. Typ. Max. TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 z V z 4.5 V ±100 nA Applications 50 μA μA z 300 240 mΩ z z z z © 2009 IXYS CORPORATION, All rights reserved Designed for linear operation International standard packages Avalanche rated Molding epoxies meet UL 94 V-0 flammability classification Guaranteed FBSOA at 75°C Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators DS100101(01/09) IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 10 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) tf RG = 2Ω (External) Qg(on) Qgs 14 nF 600 pF 130 pF 43 ns ns 43 ns 335 nC Terminals: 1 - Gate 3 - Source 58 nC Dim. 212 nC °C/W Safe Operating Area Specification Test Conditions Min. SOA VDS = 480V, ID = 0.6A, TC = 75°C, tp = 3s 288 Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM ∅P 3 ns 0.25 Symbol 2 65 0.23 °C/W (TO-247&TO-3P) 1 123 RthJC RthCS S 10.7 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 18 TO-247 (IXTH) Outline Typ. Max. W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 A Repetitive, pulse width limited by TJM 120 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = IS, -di/dt = 100A/μs, VR = 100V 710 e Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline ns Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. TO-268 (IXTT) Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 80 30 VGS = 20V 14V 12V 10V 9V 27 24 60 8V ID - Amperes ID - Amperes 21 VGS = 20V 14V 12V 10V 70 18 15 7V 12 50 9V 40 8V 30 9 20 6 7V 6V 10 3 6V 5V 0 0 0 1 2 3 4 5 6 0 5 10 30 25 30 2.8 VGS = 20V 12V 10V 9V 24 2.6 VGS = 10V 2.4 RDS(on) - Normalized 27 8V 21 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 18 15 7V 12 9 6V 2.2 I D = 30A 2.0 I D = 15A 1.8 1.6 1.4 1.2 1.0 6 0.8 5V 3 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 13 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 35 3.0 VGS = 10V 2.8 30 TJ = 125ºC 2.6 2.4 25 2.2 ID - Amperes RDS(on) - Normalized 15 VDS - Volts VDS - Volts 2.0 1.8 1.6 20 15 10 1.4 TJ = 25ºC 1.2 5 1.0 0.8 0 0 10 20 30 40 50 ID - Amperes © 2009 IXYS CORPORATION, All rights reserved 60 70 80 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: T_30N60L2(8R)01-20-09-A IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Fig. 7. Input Admittance Fig. 8. Transconductance 28 40 TJ = - 40ºC 26 35 24 125ºC 20 TJ = 125ºC 25ºC - 40ºC 25 g f s - Siemens ID - Amperes 25ºC 22 30 20 15 18 16 14 12 10 8 10 6 4 5 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 VGS - Volts 15 20 25 30 35 40 45 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 90 16 80 14 VDS = 300V I D = 15A I G = 10mA 12 60 VGS - Volts IS - Amperes 70 50 40 TJ = 125ºC 30 10 8 6 4 20 TJ = 25ºC 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 40 80 120 160 200 240 280 320 360 400 440 480 VSD - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 Capacitance - PicoFarads f = 1 MHz Ciss Z(th)JC - ºC / W 10,000 Coss 1,000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH30N60L2 IXTQ30N60L2 IXTT30N60L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 100.0 100.0 RDS(on) Limit RDS(on) Limit 25µs 25µs 100µs 100µs 10.0 ID - Amperes 1ms 10ms 100ms 1.0 ID - Amperes 10.0 1ms 10ms 1.0 DC 100ms TJ = 150ºC DC TJ = 150ºC TC = 25ºC TC = 75ºC Single Pulse Single Pulse 0.1 0.1 10 100 VDS - Volts © 2009 IXYS CORPORATION, All rights reserved 1000 10 100 1000 VDS - Volts IXYS REF: T_30N60L2(8R)01-20-09-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.