IXTQ36N30P

PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P VDSS ID25 = = ≤ RDS(on) 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 300 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 36 A IDM TC = 25° C, pulse width limited by TJM 90 A IAR TC = 25° C 36 A EAR TC = 25° C 30 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD TC = 25° C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-220 TO-263 (TO-3P / TO-220) G D(TAB) TO-220 (IXTP) G D(TAB) TO-3P (IXTQ) G D S G = Gate S = Source g g g D(TAB) D = Drain TAB = Drain Features l l l Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 300 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved D S 1.13/10 Nm/lb.in. 5.5 4 3 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) S V TJ = 125° C 92 5.5 V ±100 nA 1 200 µA µA 110 mΩ International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99155E(10/05) IXTA 36N30P IXTP 36N30P IXTQ 36N30P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 12 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 22 S 2250 pF 370 pF 90 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 24 30 ns ns td(off) RG = 10 Ω (External) 97 ns tf 28 ns Qg(on) 70 nC 17 nC 35 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-3P (IXTQ) Outline 0.42°C/W (TO-3P) (TO-220) °C/W °C/W 0.21 0.25 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 36 A ISM Repetitive 90 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 250 2.0 TO-220 (IXTP) Outline ns µC TO-263 (IXTA) Outline Pins: 1 - Gate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain IXTA 36N30P IXTP 36N30P IXTQ 36N30P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 36 90 VGS = 10V 33 30 27 24 21 7V 18 15 12 9 60 8V 50 40 7V 30 20 6V 6 9V 70 8V I D - Amperes I D - Amperes VGS = 10V 80 9V 6V 10 3 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 3 6 9 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 15 18 V D S - Volts 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 36 3.1 VGS = 10V 33 2.8 27 R D S ( o n ) - Normalized 9V 8V 30 I D - Amperes 12 24 7V 21 18 15 6V 12 9 VGS = 10V 2.5 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 6 0.7 5V 3 0 0.4 0 1 2 3 4 5 6 V D S - Volts 7 8 9 -50 10 0.5 ID25 Value vs. ID 50 75 100 125 150 35 3.4 30 TJ = 125ºC 3 I D - Amperes R D S ( o n ) - Normalized 25 Fig. 6. Drain Current vs. Case Tem perature 40 VGS = 10V 3.8 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 4.2 -25 2.6 2.2 1.8 25 20 15 10 1.4 TJ = 25ºC 1 5 0.6 0 0 10 20 30 40 50 I D - Amperes © 2005 IXYS All rights reserved 60 70 80 90 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 36N30P IXTP 36N30P IXTQ 36N30P Fig. 8. Transconductance 70 35 60 30 50 25 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 40 30 TJ = 125ºC 20 25ºC 125ºC 20 15 10 25ºC -40ºC 10 TJ = -40ºC 5 0 0 4.5 5 5.5 6 6.5 7 7.5 8 0 8.5 10 20 30 V G S - Volts 50 100 10 90 9 VDS = 150V 80 8 I D = 18A 70 7 I G = 10mA 60 50 40 TJ = 125ºC 70 80 90 6 5 4 3 20 2 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 1.2 0 1.3 10 20 30 40 50 60 70 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TJ = 150ºC C iss TC = 25ºC R DS(on) Limit I D - Amperes Capacitance - picoFarads 60 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 30 40 I D - Amperes 1000 C oss 100 25µs 100µs 10 100 1ms 10ms C rss DC 1 10 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTA 36N30P IXTP 36N30P IXTQ 36N30P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e 0.45 0.40 R ( t h ) J C - ºC / W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 Pu ls e W id th - m illis e c o n d s © 2005 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.