IXTQ470P2

Advance Technical Information IXTQ470P2 PolarP2TM Power MOSFET VDSS ID25 RDS(on) trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 42 126 A A IA EAS TC = 25°C TC = 25°C 42 1.3 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 830 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 5.5 g TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight 500V 42A Ω 145mΩ 400ns TO-3P Symbol TJ TJM Tstg = = ≤ = G D S G = Gate S = Source Tab D = Drain Tab = Drain Features z z z z Avalanche Rated Fast Intrinsic Diode Dynamic dv/dt Rated Low Package Inductance Advantages z z z High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved z V 4.5 V ± 100 nA 5 50 μA μA 145 mΩ z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100248(03/10) IXTQ470P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 23 Ciss Coss 36 S 5400 pF 545 pF 44 pF 23 ns 12 ns 42 ns 9 ns 88 nC 30 nC 31 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3Ω (External) Qg(on) Qgs TO-3P (IXTQ) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 0.15 °C/W RthJC RthCS °C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 42 A Repetitive, Pulse Width Limited by TJM 168 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 21A, -di/dt = 100A/μs 400 ns VR = 100V, VGS = 0V Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.