Preliminary Technical Information
IXTQ480P2
PolarP2TM
Power MOSFET
VDSS
ID25
RDS(on)
trr(typ)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
500
500
V
V
VGSS
VGSM
Continuous
Transient
30
40
V
V
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
52
150
A
A
IA
EAS
TC = 25C
TC = 25C
52
1.5
A
J
dv/dt
IS IDM, VDD VDSS, TJ 150C
10
V/ns
PD
TC = 25C
960
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
1.13/10
Nm/lb.in.
5.5
g
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Md
Mounting Torque
Weight
500V
52A
120m
400ns
TO-3P
Symbol
TJ
TJM
Tstg
=
=
=
G
D
S
G = Gate
S = Source
Tab
D
= Drain
Tab = Drain
Features
Avalanche Rated
Fast Intrinsic Diode
Dynamic dv/dt Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
500
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125C
© 2010 IXYS CORPORATION, All Rights Reserved
V
5.0
V
100
nA
5
50
A
μA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
120 m
DS100249A(4/16)
IXTQ480P2
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 0.5 • ID25, Note 1
30
Ciss
Coss
48
S
6800
pF
680
pF
44
pF
22
ns
11
ns
40
ns
8
ns
108
nC
37
nC
38
nC
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
Qg(on)
Qgs
TO-3P (IXTQ) Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
0.13 C/W
RthJC
RthCS
C/W
0.25
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Characteristic Values
Min.
Typ.
Max.
52
A
Repetitive, Pulse Width Limited by TJM
204
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IF = 26A, -di/dt = 100A/s
400
ns
VR = 100V, VGS = 0V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.